• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1697-1699
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• 2004

In this investigation, we have studied the diffusion of the $Cu^+$ ion in the Cu/Ta/SiOCH/Si and Cu/Ta/$SiO_2$/Si MIS-C structure. The Cu ions diffusion into the Ta barrier and SiOCH was examined by shift in flatband voltage of capacitance-voltage measurement and leakage current of current-voltage measurement. These evalution indicated that $Cu^+$ ion diffusion rate in Ta/SiOCH is considerably lower then the Ta/$SiO_2$ structure. And diffusion barrier Ta(50[nm]) is useful barrier against $Cu^+$ ion diffusion up to 450$^{\circ}C$.

• Electrical & Electronic Materials
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• v.9 no.6
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• pp.572-577
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• 1996

Alternating current and direct current of pure, ball milled, and $Al_{2}$O$_{3}$ added ZnO were investigated by means of complex impedance measurement and voltage-current source measurement unit. The electrical conductivity of A1$_{2}$O$_{3}$ added ZnO samples increases when the content of A1$_{2}$O$_{3}$ is used within 1 at% and decreases when it's used more than that. The increase and decrease of electrical conductivity seem to be the donor effect of $Al_{2}$O$_{3}$ and the increase of the number of ZnO grains, respectively. Impedance spectrum seems to be one semircicle. The size of semicircle increase with increasing the A1$_{2}$O$_{3}$ contents. The calculated dielectric constant(at 50.deg. C) were about 70-140 at the peak of the semicircle. The semicircles seem not to be the resistance of ZnO grain as compared to that of 10 for pure ZnO.

• Journal of the Korean Ceramic Society
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• v.42 no.7 s.278
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• pp.449-454
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• 2005

A waveguide method is developed to study the materials with relatively large dielectric constants at microwave range. Basically, the method is similar to the previous waveguide methods represented by short-circuit line and transmission/reflection measurement methods. However, the complex permittivity is not determined by the shift in resonance frequencies, but by numerical analysis of measured scattering parameters. In order to enhance microwave penetration into the specimen with relatively large permittivity, a dielectric plate with lower permittivity is employed for impedance matching. The influences of air gap between the specimen and waveguide wall are evaluated, and the corresponding errors are estimated. The propagation of higher order modes is also considered. Experimental results for several reference ceramics are presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.270-273
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• 2001

Electrical tree is studied widely by manufacture state of insulating material fare and blazing fire diagnosis system of use in phenomenon of part discharge that happen for main cause of dielectric breakdown of equipment for electric power. Use process that draw tree pattern here measuring above zero to study special quality of this electricity tree, real-time processing by image processing is proposed because reproduction of tree blazing fire process drops and pattern of tree is difficult correct quantification of tree growth by existent visual observation by involution. This research presents general process that need in image processing of tree blazing fire, and that remove various noises that happen in above zero by measuring electrical tree dividing background and complete view in measured above zero taking advantage of specially proposed complete view object abstraction techniques effectively and quantification of tree becomes easy naturally, can apply to dielectric breakdown estimate because can chase growth process of tree.

• Transactions of the Korean Society of Mechanical Engineers
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• v.12 no.1
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• pp.152-162
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• 1988

In recent years, attention has been paid to the ceramic material next to metals and plastics due to its inherent characteristics, i.e., good hardness, resistance to heat and corrosion. Recently, various kinds of ceramic dielectrics have been developed for application in industry. It is of prime importance to know the thermophysical properties for wider use of these new materials. However, no extensive effort has been made for systematic measurement of the properties. In this paper, the dielectric constant of five different kinds of ceramic dielectrics ware measured. We call these samples as MgO.SiO$_{2}$, MgTiO$_{3}$, TiO$_{2}$, CaTiO$_{3}$, and BaTiO$_{3}$. Which are currently in commercial sue. The values of thermal dirrusivities, specific heats, and thermal conductivities of these ceramic dielectrics sere measured as a function of temperature ranging from room temperature to about 1300k.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.51-55
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• 2023

Measurement of the ferroelectric polarization hysteresis curve is an important means of overall evaluation and interpretation of the ferroelectric structure and dielectric properties. If a resistive component is included in the ferroelectric sample, an error is included in the measured value of the spontaneous polarization. When configuring the electrical circuit to measure the polarization, by properly utilizing the external resistance corresponding to the resistive component included in the sample, the error due to the resistive loss of the sample was excluded and the size of the ferroelectric polarization induced inside could be accurately measured. It is expected that the displacement and dielectric characteristics of ions inside the ferroelectric can be more accurately evaluated through the evaluation of such an accurate polarization hysteresis curve.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.3
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• pp.324-330
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• 2013

This paper presented measurement results of scattering characteristics of dielectric barrier discharge (DBD) plasma at atmospheric pressure. In this paper, plasma actuator is fabricated by parallel connecting of basic configuration of DBD plasma actuator, then plasma could be generated by applying 14 kV, 4 kHz of high voltage generator. In order to measure the scattering characteristics of DBD plasma, in this paper, two horn antennas and vector network analyzer are used to compare the S-parameter. Because of the structure of fabricated plasma generator, different result is obtained as antenna polarization changes. When antenna polarization is parallel to electrodes of plasma generator, the scattered field is reduced by 2 dB in maximum. In addition, for parallel polarization case, PEC is set up behind the plasma generator to measure backward scattered field. When the observation angles are $40^{\circ}C$ and $60^{\circ}C$, the amount of reduced scattered field is 2 dB in maximum at 5 GHz.

• Progress in Superconductivity
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• v.4 no.2
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• pp.137-143
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• 2003

In measuring the microwave surface resistance of high-Tc superconductor (HTS) films using the dielectric-loaded cavity resonator method, one of the most important factors that limit the measurement sensitivity is the measurement error in the loss tangent ($tan\delta$) of the dielectric rod placed inside the cavity. We have measured the effective surface resistance ( $R_{S}$ $^{eff}$) of$ YBa_2$$_Cu3$$_{7-{\delta}}$ (YBCO) films and the $tan\delta$ of rutile ($TiO_2$) using the 'two-tone'method suggested by Kobayashi et at. [IEEE, MTT-S Digest, 495, (2001)], which enables simultaneous measurements of both the $R_{S}$ $^{eff}$ fof HTS films and the $tan\delta$ of the rutile with high sensitivity. A rutile-loaded cavity resonator with the $TE_{012}$ and $TE_{021}$ resonant frequencies at 13.67 - 14.01 GHz is used for this purpose. At temperatures where the two modes do not couple with other modes, the $R_{S}$ $^{eff}$ of YBCO films and $tan\delta$ of rutile measured by the two-tone method appear to match well with the corresponding values measured using the reported $tan\delta$ values of sapphire within 10 %. Usefulness of the 'two-tone' method for microwave characterization of HTS films and dielectrics is discussed.d.ielectrics is discussed.ussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.170-173
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• 2001

Thin films of phase-pure perovskite (P $b_{0.72}$L $a_{0.28}$) $Ti_{0.93}$ $O_3$(PLT) were deposited in-situ onto Pt/Ti/ $SiO_2$/Si substrates by pulsed laser deposition. We have systematically investigated the variation of grain sizes depending on the process condition. Both in-situ annealing and ex-situ annealing treatments have been compared depending on the annealing time. Two-step process to grow (P $b_{0.72}$L $a_{0.28}$) $Ti_{0.93}$ $O_3$(PLT) films was adopted and verified to be useful to enlarge the grain size of the film and to enhance the leakage current characteristics. The grain sizes of PLT thin films were successfully controlled 260 to 350 nm by changing process parameters. Electrical properties including dielectric constant, ferroelectric characteristics, crystallization and leakage current of PLT thin films were shown to be strongly inf1uenced by grain size. Also PLT thin films on p-type(100) Si substrate will be fabricated by pulsed laser deposition technique using a Nd:YAG laser with different wavelengths of 355, 532 and 1064 nm. Effect of the variation of laser wavelength on dielectric properties will be discussed. Microstructural and electrical properties of the film were investigated by C-V measurement leakage current measurement and SEM.ent and SEM.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.6
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• pp.44-51
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• 1999

The electrical conduction mechanism of high dielectric $(Ba,Sr)TiO_3$ (BST) thin film capacitor, which is the promising cell capacitor for high density DRAM, was investigated in low field region (<0.2MV/cm). It is known that the current in the low field region consists of dielectric relaxation current and leakage current. The current-time (I-t) measurement technique under the constant voltage was used for extracting successfully each current component. The conduction mechanism of the BST capacitor was deduced from the dependency of the current on the measurement temperature, strength of electric field, the polarity of applied electric field and post annealing process. From these results, it was suggested that the dielectric relaxation current and the leakage current are originated from the redistribution of internally trapped electron by hopping process and Pool-Frenkel conduction mechanism, respectively. It was also concluded that traps causing these two current components are due to oxygen vacancies within the BST film.