• Title/Summary/Keyword: Dielectric factor

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Static Dielectric Constant and Relaxation Time for the Binary Mixture of Water, Ethanol, N. N-Dimethylformamide, Dimethylsulphoxide, and N, M-Dimethylacetamide with 20Hethoxyethanol

  • Ajay Chaudgari;N. M. More;S. C. Mehrotra
    • Bulletin of the Korean Chemical Society
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    • v.22 no.4
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    • pp.357-361
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    • 2001
  • Frequency spectra of the complex permittivity of 2-methoxyethanol (2-ME) with water, ethanol, dimethylsulphoxide (DMSO), N,N-dimethylformamide (DMF) and N,N-dimethylacatamide (DMA) have been determined over the frequency range of 10 MHz to 20 GHz at 25 $^{\circ}C$, using the Time domain reflectometry method, for 11 concentrations for each system. The static dielectric constant, dielectric constant at microwave frequency, relaxation time, excess dielectric parameters, and Kirkwood correlation factor have been determined. The relaxation in these systems within the frequency range can be described by a single relaxation time constant, using the Debye model. The parameters show a systematic change with the concentration.

Characterization of Heterogeneous Interaction Behaviour in Ternary Mixtures by Dielectric Analysis: The H-Bonded Binary Polar Mixture in Non-Polar Solvent

  • Sengwa, R.J.;Madhvi;Sankhla, Sonu;Sharma, Shobha
    • Bulletin of the Korean Chemical Society
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    • v.27 no.5
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    • pp.718-724
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    • 2006
  • The heterogeneous association behaviour of various concentration binary mixtures of mono alkyl ethers of ethylene glycol with ethyl alcohol were investigated by dielectric measurement in benzene solutions over the entire concentration range at 25 ${^{\circ}C}$. The values of static dielectric constant $\epsilon_0$ of the mixtures were measured at 1 MHz using a four terminal dielectric liquid test fixture and precision LCR meter. The high frequency limiting dielectric constant $\epsilon_\infty$ values were determined by measurement of refractive index $n_D$ ($\epsilon_\infty\;=\;n_D\;^2$). The measured values of $\epsilon_0$ and $\epsilon_\infty$ were used to evaluate the values of excess dielectric constant $\epsilon^E$, effective Kirkwood correlation factor $g^{eff}$ and corrective correlation factor $g_f$ of the binary polar mixtures to obtain qualitative and quantitative information about the H-bond complex formation. The non-linear behaviour of the observed $\epsilon_0$ values of the polar molecules and their mixtures in benzene solvent confirms the variation in the associated structures with change in polar mixture constituents concentration and also by dilution in non-polar solvents. Appearance of the maximum in $\epsilon^E$ values at different concentration of the polar mixtures suggest the formation of stable adduct complex, which depends on the molecular size of the mono alkyl ethers of ethylene glycol. Further, the observed $\epsilon^E$ < 0 also confirms the heterogeneous H-bond complex formation reduces the effective number of dipoles in these polar binary mixtures. In benzene solutions these polar molecules shows the maximum reduce in effective number of dipoles at 50 percent dilutions. But ethyl alcohol rich binary polar mixtures in benzene solvent show the maximum reduce in effective number of dipoles in benzene rich solutions.

Microwave Dielectric Properties of the $BaO-(Nd,Bi)_2 O_3-TiO_2$$_2$ Ceramic for Mobile Communication Component (이동 통신 부품에 이용되는 $BaO-(Nd,Bi)_2 O_3-TiO_2$계 마이크로파 유전체의 유전 특성)

  • 윤중락;이헌용;김경용;이석원
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.11
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    • pp.947-953
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    • 1998
  • The microwave dielectric properties of X BaO-0.15($Nd_{0.87}Bi_{0.13})_2O_3-(0.85-X)TiO_2 (X=0.14~0.17) and 0.16BaO-0.15(Bi_xNd_{1-x})_2O_3-0.69TiO_2$ (X=0.12~0.15) ceramics sintered at 1320~$1380^{\circ}C$ were investigated. The microwave dielectric properties of X BaO-0.15(Nd_{0.87}Bi_{0.13})_2O_3-(0.85-X)TiO_2$ (X=0.14~0.17) can be controlled effectively by adjusting X content : with increasing X from 0.14 to 0.17 both dielectric constant and temperature coefficient of resonant frequency decreased from 94.6 to 86 and from 22 ppm/^${\circ}C to -7 ppm/^{\circ}C$, respectively, while quality factor increased from 1300 to 1920 (at 4GHz). The microwave dielectric properties of 0.16BaO-0.15(Bi_x/Nd_{1-x2}O_3 -0.69TiO_2$ (X=0.12~0.15) can be controlled effectively by adjusting X content : with increasing X from 0.12 to 0.15 both quality factor and temperature coefficient of resonant frequency decreased from 1920 to 1430 and from 9 ppm/^${\circ}C to -10 ppm/^{\circ}C$, respectively, while dielectric constant increased from 87.5 to 92.6.

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Effect of ZnO on Low Temperature Sintering of PMN-PNN-PZT Ceramics (ZnO가 PMN-PNN-PZT 세라믹스의 저온소결에 미치는 영향)

  • Lee, Sang-Ho;Yoo, Ju-Hyun;Hong, Jae-Il;Ryu, Sung-Lim
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.32-33
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    • 2006
  • In this study, in order to develop multilayer ceramic actuator for ultrasonic nozzle and ultrasonic vibrator, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3$. $Na_2CO_3$ and ZnO as sintering aids. And then, their piezoelectric and dielectric properties according to the amount of ZnO addition were investigated. The addition of ZnO improved density, dielectric constant, electromechanical coupling factor, mechanical quality factor and piezoelectric d constant of PMN-PNN-PZT ceramics due to the increase of sinterability and accepter doping effect. Electromechanical coupling factor and mechanical quality factor of PMN-PNN-PZT ceramics increased with ZnO amount up to 0.4wt% and then decreased. At the sintering temperature of $900^{\circ}C$ and 0.4wt% ZnO addition, density, dielectric constant, electromechanical coupling factor, mechanical quality factor and piezoelectric d constant showed the optimum value of 7.876g/$cm^2$, 1299, 0.612, 1151 and 369pC/N, respectively.

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Microwave Dielectric Properties of the ($Ba_{1-x}Sr_{x}$)O-$Sm_2O_3$-$TiO_2$ Ceramics. (($Ba_{1-x}Sr_{x}$)O-$Sm_2O_3$-$TiO_2$세라믹스의 마이크로파 유전특성)

  • 박인길;류기원;배선기;이영희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.11a
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    • pp.5.2-8
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    • 1995
  • 0.15($Ba_{1-x}Sr_{x}$)O-$0.15Sm_2O_3$-$0.7TiO_2$(x=0∼9[m/o]ceramics were fabricated by mixed-oxide method. Microwave dielectric properties were investigated with sintering conditions aid Sr addictive. In the specimen with x=0[m/o] sintered at 1350∼1470[$^{\circ}C$], dielectric constant, quality factor and temperature coefficient of resonant frequency were 70∼74, 2800∼3300(at 3[GHz]), -1.33∼+l.66[ppm/$^{\circ}C$, respectively. Increasing the Sr additive from 0 to 5[m/o], dielectric constant and temperature coefficient of resonant frequency were increased and quality factor was decreased. In the specimen with x=r[m/o] sintered at 1375[$^{\circ}C$], 6[hr], dielectric constant, quality factor and temperature coefficient resonant frequency were 75.62, 2785(at 3[GHz]), +8.39[ppm/$^{\circ}C$], respectively.

Development of the dielectric ceramics with low loss for microwave applications (고주파 응용을 위한 저손실 유전체 세라믹스의 개발)

  • Kim, Jae-Sik;Choi, Eui-Sun;Ryu, Ki-Won;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1250-1251
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    • 2008
  • In this study, the dielectric ceramics with low loss were investigated for high frequency application. All sample of the $Ba_5M_4O_{15}$ (M=Ta, Nb) ceramics were prepared by the conventional mixed oxide method and sintered at $1325{\sim}1575^{\circ}C$. The bulk density and dielectric constant of the $Ba_5Ta_4O_{15}$ ceramics were increased continuously with increasing of sintering temperature. The quality factor was increased in the sintering temperature of $1375{\sim}1475^{\circ}C$ but decreased at the temperature above 1475$^{\circ}C$. In the case of $Ba_5Nb_4O_{15}$ ceramics, the bulk density, dielectric constant and quality factor were increased with sintering temperature but decreased above temperature of 1400$^{\circ}C$. The dielectric constant, quality factor and temperature coefficient of the resonant frequency (TCRF) of the $Ba_5Ta_4O_{15}$ and $Ba_5Nb_4O_{15}$ ceramics, sintered at 1475$^{\circ}C$ and 1400$^{\circ}C$, were 25.15, 53105 GHz, -3.06 ppm/$^{\circ}C$ and 39.55, 28052 GHz, 5.7 ppm/$^{\circ}C$, respectively.

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Effect of CuO and CdO Additions on the Microwave Dielectric Properties of $BiNbO_4$ Ceramics using Mobile Communication (이동 통신용 $BiNbO_4$ 세라믹스의 CuO 및 CdO 첨가량에 따른 고주파 유전 특성)

  • Yun, Jung-Rak;Lee, Heon-Yong;Kim, Gyeong-Yong
    • Korean Journal of Materials Research
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    • v.8 no.11
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    • pp.1043-1047
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    • 1998
  • The effect of CuO and CdO addition on the microwave dielectric properties of $BiNbO_4$, ceramics were investigated. As the content of CdO increased, sintered density and quality factor decreased. With increasing sintering temperature, both the dielectric constant and quality factor increased. In the case of specimen sintered at $960^{\circ}C$ with addition of 0.03 wt% of CuO and CdO, respectively. the microwave dielectric properties obtained were dielectric constant of 41.2, quality factor ($Q{\times}f_0$) of 6,500 (at 5.6GHz), temperature coefficient of resonant frequency of $3ppm^{\circ}C$.

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Microwave Dielectric Properties of 0.7Ba(Mg,Ta)O$_3$-0.3Ba(Co,Nb)O$_3$Ceramics with Sintering Temperature (소결온도에 따른 0.7Ba(Mg,Ta)O$_3$-0.3Ba(Co,Nb)O$_3$세라믹스 마이크로파 유전특성에 관한연구)

  • Lee, Moon-Kee;Kim, Nam-Young;Lee, Young-Hie
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.50 no.3
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    • pp.110-114
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    • 2001
  • $0.7Ba(Mg{\frac}_{1}{3}Ta{\frac}_{1}{3})O_3-0.3Ba({\frac}_{1}{3}Nb{\frac}_{1}{3})O_3ceramics$ were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1500{\sim}1575[^{\circ}C]$ for 5 hours in air. The microwave dielectric properties of the specimens were investigated with sintering temperature. The 0.7BMT-0.3BCN ceramics showed typical XRD patterns of the complex perovskite structure. Dielectric constant and quality factor were increased with increasing the sintering temperature. In the case of the specimens sintered at $1575[^{\circ}C]$ for 5 hours, dielectric constant, quality factor and temperature coefficient of resonant frequency were good values of 28,23545 at 10[㎓] and -1.2 $[ppm/^{\circ}C]$, respectively.

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Radiation Effects on ${\gamma}$-Ray Irradiated Ethylene Propylene Rubber using Dielectric Analysis

  • Kim, Ki-Yup;Ryu, Boo-Hyung;Lee, Chung;Lim, Kee-Joe
    • KIEE International Transactions on Electrophysics and Applications
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    • v.3C no.2
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    • pp.48-54
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    • 2003
  • To evaluate the radiation degradation of ethylene propylene rubber (EPR), radiation effects on EPR were investigated by using dielectric analysis and thermal-gravimetric analysis. Permittivity, loss factor, tan$\delta$, and thermal decomposition temperature were observed for ${\gamma}$-ray irradiated EPR. As the radiation dose was increased, the peak temperature of the loss factor and tans of EPR were increased and loss factor and tan$\delta$ at peak temperature were decreased. Activation energies were calculated using loss factor and thermal decomposition for ${\gamma}$-ray irradiated EPR as well. The trends of both calculated activation energies showed the same tendencies as radiation dose was increased.