• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제50권8호
• /
• pp.376-381
• /
• 2001

The(1-x) MgTiO$_3$-xSrTiO$_3$(x=0.03~0.04) ceramics were fabricated by the conventional mixed oxide method. The structural and microwave dielectric properties were investigated by XRD, SEM, EDS and network analyzer. The sintering temperature and time were 1275$^{\circ}C$~135$0^{\circ}C$ and 2hours, respectively. In the XRD results of 0.96MgTiO$_3$-0.04SrTiO$_3$ceramics, the perovskite structure of SrTiO$_3$and ilmenite structure of MgTiO$_3$phase were coexisted. The dielectric constant($\varepsilon$(sub)${\gamma}$) and temperature coefficient of resonant frequency($\tau$(sub)f) were increased with addition of SrTiO$_3$. In thie case of 0.96MgTiO$_3$-0.04SrTiO$_3$ ceramics sintered at 13$25^{\circ}C$, the dielectric constant, quality factor(Q) and temperature coefficient of resonant frequency($\tau$(sub)f) were 20.13, 7956(at 7.27GHz), and +1.76ppm/$^{\circ}C$, respectively.

• 한국전기전자재료학회논문지
• /
• 제17권8호
• /
• pp.840-845
• /
• 2004

The microstructure and microwave dielectric properties of $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics were investigated. The specimens were prepared by the conventional mixed oxide method with sintering temperature of 140$0^{\circ}C$∼150$0^{\circ}C$. To improve the quality factor and the temperature coefficient of resonant frequency,$ Ti{O}_2(\varepsilon\Gamma=100, Q\times f_\Gamma=40,000 GHz,\ta_f= +450 ppm\diagup^{\circ}C $ was added in ${Mg}_4{Ta}_2{O}_9$ceramics. The dielectric and structural properties were investigated. According to the XRD patterns, $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics had the ${Mg}_4{Ta}_2{O}_9$ phase(hexagonal) and ${MgTi}_2{O}_5$phase(orthorhombic). The dielectric constant($\varepsilon_r$). quality($Qtimes{f}_r$${\tau}_f$) of the $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics were 8.12∼18.59, 18,750∼186,410 GHz and －36.02∼＋3.46 ppm/$^{\circ}C$, respectively.

• 한국전기전자재료학회논문지
• /
• 제17권8호
• /
• pp.830-834
• /
• 2004

In this study, lead-free pirzoelectric ceramics were investigated for pressure sensor applications as a function of the amount of ${La}_2{O}_3$ addition at $Bi(Na, K)Ti{O}_3-SrTi{O}_3$system. With increasing the amount of addition, the density and dielectric constant increased up to 0.9 wt% ${La}_2{O}_3$ addition and decreased above 0.9 wt% ${La}_2{O}_3$addition. Electromechanical coupling factor( $K_{P}$) showed the maximum value at 0.2 wt% ${La}_2{O}_3$addition and decreased above 0.2 wt% ${La}_2{O}_3$ addition. Electromechanical coupling $factor{(K)}_P$, density, dielectric constant$(\varepsilon_\Gamma)$, piezoelectric constant$(d_33)$ and curie temperature$(T_C)$ showed optimum value of 0.40, 5.75 g/㎤, 768, 215 pC/N and 320 $^{\circ}C$ at 0.2 wt%${La}_2{O}_3$addition, respectively.