• Composites Research
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• 제14권1호
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• pp.30-38
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• 2001

복합재료는 우수한 비강성, 비강도 특성 때문에 기존의 항공우주산업뿐만 아니라 로봇 팔. 공작기계 등에 널리 사용되고 있다. 복합재료 경화중의 온라인 모니터링기법은 생산성 향상 및 품질의 신뢰성 향상을 위하여 매우 중요한 연구분야로 대두되고 있다. 본 논문에서는 휘스톤 브리지식 유전회로를 설계하고 제작하였다. 또한 고온 경화 복합재료에 적용할 수 있는 고온 유전센서를 개발하여 그 성능을 평가하였다. 유한요소해석을 이용하여 유전 센서에 작용하는 열 잔류응력을 계산하였으며, 고온분위기 하에서 유전센서의 유전특성을 평가하였다. 이상에서 개발된 유전회로와 고온 유전센서를 이용하여 BMI(Blsmaleimlde) 수지의 경화모니터링을 수행하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.776-779
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• 2004

The dielectric and electrical characteristics of Ce doped (Ba0.6Sr0.4)TiO3 (BST) thin films were investigated as a function of Ce content. Both atomic force microscopy (AFM) and x-ray diffraction (XRD) analysis showed that increasing the Ce doping ratio causes the decrease in grain size while the surface remains smooth and crack-free. The dielectric properties of the Ce doped BST films were found to be strongly dependent on the Ce contents. The dielectric constant and dielectric loss of the BST films decreased with increasing Ce content. However, it was also found that, compared with undoped films, the increase of Cecontent improves the leakage-current characteristics. The improvement of the electrical properties of Ce-doped BST films may be related to the decrease in the concentration of oxygen vacancies. The figure of merit (FOM) reached the maximum value of 48.9 at the 1 mol % of Cedoping. The dielectric constant, loss factor, and tunability of the 1 mol% Ce doped Ba0.6Sr0.4TiO3 thin films were 320, 0.011, and 46.3%, respectively.

• 대한전기학회논문지
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• 제43권4호
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• pp.613-619
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• 1994

Dielectric properties of Ba(ZnS11/3TTaS12/3T)OS13T+x ZnO(x=0, 0.4, 0.8, 1.0 wt%) ceramics have been investigated at microwave frequencies. With excess ZnO, the sinterability was improved and the dielectric constant($\varepsilon$S1rT) and the unloaded quality factor(QS1UT) were increased. The structure changed into hexagonal from pseudocubic as being annealed at 140$0^{\circ}C$ in excess ZnO composition. Also, the temperature coefficient of the resonant frequency ($\tau$S1fT) turned into (-)ppm/$^{\circ}C$ when sintered at 155$0^{\circ}C$ for 2 hours. But the specimen sintered in ZnO muffling showed increased density and $\varepsilon$S1rT but lowerde QS1uT. Among the specimen investigated, expecially the composition added with 0.4wt% excess ZnO showed the most optimum dielectric values ($\varepsilon$S1rT=28, QS1uT x f=120000GHz) better than those of original Ba(ZnS11/2T TaS12/3T)OS13T ceramics.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권2호
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• pp.103-108
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• 2004

This paper shows the simulation of electric field distribution and removal characteristics of Escherichia coli for water discharge tube with globular $SiO_2$. At the experiments of the removing Escherichia coli used the discharge tube with globular dielectric($SiO_2$), because the electric field is increased when applied voltage is increased, the removed ratio of Escherichia coli was related with increasing of applied voltage. When a passing number of test water in water discharge tube is increased, the removed ratio of Escherichia coli is increased because passing number of territory with electric field is increased. When diameter of globular dielectric($SiO_2$) is increased, the removed time of Escherichia coli was decreased because electric field for dielectric polarization of globular dielectric($SiO_2$) was increased. Also, the removed ratio of Escherichia coli of the water discharge tube with globular dielectric($SiO_2$) was measured higher than the removal ratio of the discharge tube without globular dielectric($SiO_2$)

• 전기학회논문지
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• 제63권1호
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• pp.80-84
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• 2014

The discharge characteristics of Surface Dielectric Barrier Discharge (SDBD) reactor are investigated to find optimal driving condition with adjusting various parameter. When the high voltage with sine wave form is applied to SDBD source, successive pulsed current waveforms are observed owing to multiple ignitions through the long discharge channel and wall charge accumulation on the dielectric surface. The discharge voltage, total charge between dielectrics, mean energy and power are calculated from measured current and voltage according to electrode gap and dielectric thickness. Discharge mode transition from filamentary to diffusive glow is observed for narrow gap and high applied voltage case. However, when the diffusive discharge is occurred with high applied voltage, the actual firing voltage is always lower than that with low driving voltage. The $Si_3N_4$, $MgF_2$, $Al_2O_3$ and $TiO_2$ are considered for dielectric protection and high secondary electron emission coefficient. SDBD with $MgF_2$ shows the lowest breakdown voltage. $MgF_2$ thin film is proposed as a protection layer for low voltage atmospheric dielectric barrier discharge devices.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 하계학술대회 논문집
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• pp.275-278
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• 1990

This study investigated electrical characteristics of solid and liquid epoxy rosins by measuring dielectric breakdown and dielectric loss when epoxy resins were exposed to a mixing cure, i.e., Fusion Blend Method. It was found that mixing epoxy resins were superior to dielectric breakdown and has shorter curing time compare with those of pure liquid epoxy resins.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.421-424
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• 1996

Effects of humidity absorbing deterioration on AC dielectric breakdown characteristics of modified epoxy resin system with SN(succinonitrile) were investigated. As the forced humidity absorbing deterioration proceeded under high temperature and humidify, glass transition temperature increased. The dielectric breakdown strength increased and then decreased at deterioration cycles higher than 2. Not only, the increment of thermal stability but also, the physical detects such as Internal cracks and voids occurred during the humidity absorbing deterioration cycle were the main causes of the change in dielectric properties.

• 한국초전도ㆍ저온공학회논문지
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• 제17권1호
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• pp.44-47
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• 2015

High voltage superconducting apparatuses have been developed presently around the world under AC and DC sources. In order to improve electrical reliability of superconducting apparatuses with AC and DC networks, a study on the DC as well as the AC electrical breakdown characteristics of cryogenic insulations should be conducted for developing a high voltage superconducting apparatus. Recently, a sub-cooled liquid nitrogen cooling system is known to be promising method for developing a high voltage superconducting apparatus. A sub-cooled liquid nitrogen cooling system uses gaseous nitrogen to control the pressure and enhance the dielectric characteristics. However, the dielectric characteristics of gaseous nitrogen are not enough to satisfy the grade of insulation for a high voltage superconducting apparatus. In this case, the application of solid insulating barriers is regarded as an effective method to reinforce the dielectric characteristics of a high voltage superconducting apparatus. In this paper, it is dealt with a barrier effect on the DC and AC dielectric characteristics of gaseous nitrogen with respect to the position and number of solid insulating barriers. As results, the DC and AC electrical breakdown characteristics by various barrier effects is verified.

• 한국전기전자재료학회논문지
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• 제26권6호
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• pp.429-433
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• 2013

PTFE composites for use of microwave substrate were fabricated by impregnation and heat treatment fabrication with glass fabric. This study shows dielectric properties such as dielectric constant and loss can be controlled by thickness of PTFE composite with change of pressure condition in heating press process. The dielectric constant of the PTFE composites has decreasing tendency as given higher pressure condition. The dielectric loss has similar result too. Especially, the case of the dielectric loss was affected by the condition of pressure at heating press and had the best performance under 3 MPa. In order to see the reason why thickness conditions make different, their microstructures were also observed.

• 한국세라믹학회지
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• 제45권5호
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• pp.251-255
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• 2008

Microwave dielectric properties of $MgTiO_3,\;MgWO_4,\;MgNb_2O_6$, and $MgTa_2O_6$ were investigated based on the structural characteristics. The dielectric constant (K) was dependent on the dielectric polarizabilities of the specimens, and the deviation of the observed dielectric polarizabilities (${\alpha}_{obs.}$) from the theoretical dielectric polarizabilities (${\alpha}_{theo.}$) were decreased with increasing of Mg-site bond valence. Quality factors (Qf) were affected by the sharing type of $MgO_6$ and $BO_6$ octahedra. Temperature coefficient of resonant frequency (TCF) was decreased with increasing of average octahedral distortion.