• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.4
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• pp.407-415
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• 2011

The stability condition and wideband characteristics of 3D ID-FDTD algorithm which has low dispersion error with isotropic dispersion are presented in this paper. 3D ID-FDTD method was proposed to improve the defect of the Yee FDTD such as the anisotropy and large dispersion error. The published paper calculated the stability condition of 3D ID-FDTD algorithm by using numerical method, however, it is thought that the examples were not sufficient to verify the stability condition. Thus, in this paper, various simulations are included in order to hold reliability under the conditions that the plane wave propagation is assumed with a single frequency and a wideband frequency. Also, the 3D ID-FDTD algorithm is compared to those that have the similar FDTD algorithm with ID-FDTD such as Forgy's method and non-standard FDTD method in a wideband. Finally, the radar cross section(RCS) for the large sphere with high dielectric constant is calculated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.414-414
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• 2007

In this study, Liquid Crystal (LC) alignment and tilt angle generation in Nematic Liquid Crystal (NLC) with negative dielectric anisotropy on the homeotropic PI surface with new ion beam exposure are reported. Also. high density of ion beam energy (DuoPIGatron type Ar ion gun) is used in this study. The tilt angle of NLC on the homeotropic Polyimide (PI) surface for all incident angles is measured about 38 degree and this has a stabilization trend. And the good LC alignment of NLC on the PI surface with ion beam exposure of $45^{\circ}$ incident angle was observed. Also the tilt angle of NLC on the homeotropic PI surface with ion beam exposure of $45^{\circ}$ had a tendency to decrease as ion beam energy density increase. The tilt angle could be controlled from verticality to horizontality. Also, the LC aligning capabilities of NLC on the homeotropic PI surface according to ion beam energy has the goodness in case of more than 1500 eV. Finally. the superior LC alignment thermal stability on the homeotropic PI surface with ion beam exposure can be achieved. For OCB(Optically Compensated Bend) mode driving, we can need pretilt angles control for fast response time. In this study, We success pretilt angles control. Consequently, this result can be applied for OCB mode.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.258-292
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• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.