• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1496-1498
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• 1994

In this study, x PSN - y PT - z PZ ceramics doped with w $MnO_2$ were fabricated by the mixed oxide method at 1250 [$^{\circ}C$] for 2[hr] and then the dielectric and pyroelectric properties were investigated. In the 0.05 PSN - 0.4 PT - 0.55 PZ specimen with 0.5[wt%] $MnO_2$ the Pyroelectrics coefficient was $6.6{\times}10^{-8}[C/cm^2.^{\circ}C]$, respectibly.

• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.442-447
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• 2008

Ferroelectric samples of the 0.65Pb$(Mg_{1/3}Ta_{2/3})O_3-0.35PbTiO_3$ modified with $Ag_2O$ were prepared by sintering at $1200^{\circ}C$ for 4 h. The fractured surface of sintered pellets were examined by scanning electron microscopy(SEM). The dielectric constant, loss, and pyroelectric coefficient of the ceramics samples were determined. The dielectric and pyroelectric properties could be improved with the addition of small amount of $Ag_2O$ up to 0.2 mol%. The dielectric and pyroelectirc peak temperatures are continuously shifted to lower temperature with addition of small amounts of $Ag_2O$.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.91-93
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• 1989

x $Pb(Sb_{1/2}Sn_{1/2})O_3-PbTiO_3-PbZrO_3$, (0.05$\leq$x$\leq$0.30) ternary compound ceramics were fabricated by the mixed oxide method. The sintering temperature and time were $1200{\sim}1300[^{\circ}C]$, 2 hour, respectively. Increasing the PSS contents, the transition temperatures were decreased. The relative dielectric constant and Curie temperature of the 0.30PSS-0.20PT-0.50PZ specimens were 372, 190[$^{\circ}C$]. The pyroelectric coefficient, figure of merits for pyroelectric current and detectivity of the 0.25PSS-0.25PT-0.50PZ specimens had the good values, $5.41{\times}10^{-8}[C/cm^{2}K]$, $27.72{\times}10^{-12}[Ccm/J]$, $7.65{\times}10^{-10}{Ccm/J]$, respectively.

• Korean Journal of Crystallography
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• v.12 no.3
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• pp.157-161
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• 2001

The observe relaxation phenomena and freezing behavior in Pb(Mg/sub ⅓/Nb/sub ⅔/O₃, relaxor ferroelectrics, weak electric-field properties as well as strong electric-field properties were investigated. The temperature dependence of the dielectric properties obtained using the low electric-field of 1 V/w was investigated. The dielectric properties obtained from the slope of the dielectric hysteresis loop and the temperature dependence of the pyroelectric properties were also investigated. When fitting all the experimental data with the Vogel-Filcher relation, a close agreement between the experimental data and equation was observed. The freezing temperature could be consistently calculated by the various methods.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.2
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• pp.126-129
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• 1999

PbTio3 is a promising material with perovskite structure for pyroelectric sensor applications with its superior pyroelectric properties, low dielectric constants, and low piezoelectric constants. Growth of pyroelectric thin films in general, needs relatively higher temperatures than those of conventional Si semiconductor processing However, low growth temperature is advantageous for the device integration. We report the low temperature (350$^{\circ}C$) growth of PbTio3 thin films by 3-gun DC magnetron reactive sputtering. The effects of substrate temperature, Pb-flux, and total pressure on crystalinity and preferred orientation of PbTio3 thin films are reported.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.491-491
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• 2011

Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.137-137
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• 1996

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1121-1124
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• 2003

PZT(30/70) thick film was fabricated by using 1,3 propanediol-based sol-gel method. Prepared film of pyroelectric property was investigated by Dynamic method of modulation frequency dependence. Pyroelectric coefficient was obtained about 5.0$\times$10$^{-8}$ C/$\textrm{cm}^2$.K. The figure of merits for voltage responsivity and specific detectivity were 3.4$\times$10$^{-11}$ C.cm/J and 5.9$\times$10$^{-9}$ C.cm/J, respectively, because of relative high-dielectric constant and high-pyroelectric coefficient. Voltage responsivity was increased at low modulation frequency and it was decreased at high modulation frequency. Voltage responsivity was maximum 1.84 V/W at 10 Hz. As Johnson noise is dominant, Noise voltage was increased nearly proportional to f$^{-1}$ 2/. Noise equivalent power and specific detectivity were 2.83$\times$10$^{-7}$ W/Hz$^{1}$2/ and 3.13$\times$10$^{5}$ cm.Hz$^{1}$2//W the same frequency at 80 Hz, respectively.

• Electrical & Electronic Materials
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• v.10 no.6
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• pp.541-547
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• 1997

(Pb$_{1-x}$ La$_{x}$)Ti$_{1-x}$ $_4$O$_3$(x=0, 0.02, 0.04, 0.08) ceramic thin films were fabricated by Sol-Gel method. A stock solution of (Pb, La)TiO$_3$ with excess Pb 10 mol% was made and spin-coated on the Pt/Ti/SiO$_2$/Si substrate at 400rpm for 30 seconds. Coated specimens were dried on the hot-plate at 35$0^{\circ}C$ for 10 min and sintered at 500~75$0^{\circ}C$ for 1 hour. The dielectric constant, remanent polarization and coercive field of the PLT(6at.%) thin films sintered at $650^{\circ}C$ were 884, 13.95$\mu$C/$\textrm{cm}^2$ and 8.7kV/cm, respectively. Pyroelectric coefficient, figure of merit of pyroelectric current, voltage responsivity and detectivity of PLT(6at.%) thin films were 3.2$\times$10$^{-8}$ C/$\textrm{cm}^2$K, 1.02$\times$10$^{-8}$ C.cm/J, 2.9 $\times$10$^{-11}$ C.cm/J, 0.29$\times$10$^{-8}$ C.cm/J, respectively.ely.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.104-107
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• 2001

The fabricated La-modified lead titanate (PLT) thin flim without paling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_{3}$ PLT (x=0.1) thin film having 10 mol% La content was deposited on a $Pt/TiO_{x}/SiO_{2}/Si$ substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is $6.6{\times}10^{-9}C/cm_{2}\cdot K$ without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are $1.03{\times}10^{-11}C\cdot cm/J$ and $1.46\times 10^{-9}C\cdot cm/J$, respectively. The PLT(10) thin film has voltage responsivity (Rv) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D*) of the PLT(10) thin film are$9.93{\times}10^{-8}W/Hz^{1/2}$ and $1.81\times 10^{6}cmHz^{1/2}/W$ at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.