• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.815-820
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• 2001

The piezoelectric properties of the PT-PZ-PNN system ceramics were investigated depending on the variati on of the grain size. The grain size was varied by sintering temperature, and additive. The effect of the grain size on the electrical, dielectric, and piezoelectric properties was studied with respect to the feasibility of the application for the piezoelectric transformer. Grain size increased as the PMW contents increased. The smaller the particle size used, the smaller the grain size obtained. Specimens are densily sintered. Dielectric and piezoelectric properties are not always improved in proportion to the grain sizes. When he particle size are fine and the grain size are increased properly with the optimum additives, the piezoelectric preperties have good values. the specimen sintered at 1200$\^{C}$ with PMW 2 mol% and MnO$\_$2/ 0.5wt% contents exhibited good piezoelectric properties for a piezoelectric transformer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.852-856
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• 2000

In this paper, we investigated the output power, step-up ratio and efficiency properties of piezoelectric transformer with dielectric and piezoelectric characteristics of manufactured ceramics. The piezoelectric transformers with $2.0$\times$10$\times$48[$mm^3$] size were fabricated and its electrical properties were measured. When output power of 6W was constantly maintained, T2 piezoelectric transformer showed the minimum temperature rise of $9(^{\circ}C)$ at $150(K\Omega)$ load resistance. However, T1 piezoelecric transformer showed the temperature rise of $7.2(^{\circ}C)$ at $200(K\Omega)$ load resistance. The 6[w] CCFL (Cold Cathode Fluorescent Lamp) was successfully driven by T1 and T2 piezoelectric transformer but, its temperature rise $\Delta$T[$^{\circ}C)$] was generated more than $20(^{\circ}C)$. It is concluded that we have to design the piezoelectric transformers so that its output impedance correspond to the load impeadance, including any stray capacitance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1060-1064
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• 2002

We have studied the effect of crystallization temperature, composition and film thickness, which are the fundamental processing parameters of lead zirconate titanate(PZT) thin film fabrication, in the respect of the piezoelectric properties by our pneumatic loading method(PLM). A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. Even though the piezoelectric properties of thin films are very critical factors in the micro-electro mechanical system(MEMS) and thin film sensor devices, a few reports for the piezoelectric characterization are provided for the last decade unlikely the bulk piezoelectric devices. We have found that the piezoelectric properties of thin films are improved as the increase of crystallization temperature up to 750$\^{C}$ and this behavior can be also explained by the analysis of dielectric polarization hysteresis loop, X-ray diffraction and scanning electron microscopy. The effect of Zr/Ti composition has been also studied. This gives us the fact that the maximum piezoelectricity is found near Morphotropic Phase Boundary(MPB) as bulk PZT system does.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.91-96
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• 2020

The 33-mode dielectric and piezoelectric properties of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 piezoelectric single crystals were measured under large electric field and compressive stress. The phase transition from the low temperature rhombohedral to the high temperature tetragonal structure was observed in the range of 110~140℃, and the Curie temperature changing to the cubic structure was about 165℃. The polarization change according to the compressive stress and electric field was measured. Relative dielectric constant was calculated from the slope of the polarization curve applied to the electric field, and the calculated relative dielectric constant increased as the applied stress increased, and the relative dielectric constant decreased as the applied electric field increased. The strain according to the compressive stress and electric field change was measured, the piezoelectric constant was calculated from the slope of the curve, and the phase transition according to the application of pressure was confirmed. In the case of practical application as an underwater or medical ultrasonic actuator, it is necessary to properly design the magnitude of the compressive stress applied to the device and the DC bias in order to maintain linear driving.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1529-1531
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• 2003

Thick film mechanical sensors can be categorized into four main areas piezoresistive, piezoelectric, piezocapastive and mechanic tube. In this areas, the thick film strain gage is the earliest example of a primary sensing element based on the substrates. The latest thick film sensor is used various pastes that have been specifically developed for pressure sensor application. The screen printing technique has been used to fabricate the pressure sensors on alumina substrate($Al_2O_3$). Thick film capacitive of strain sensing characteristics are reported and dielectric paste based on (Ti+Ba) materials. The electric property of dielectric paste has been studied and exhibit good properly with good gage factor comparable to piezoresistive strain gage. New piezocapacitive strain sensor was designed and tested. The output of capacitive value was good characteristics.