• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.56-56
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• 2008

ZnO Oxide TFT with organic dielectric was prepared. ZnO thin film as active channel was prepared by plasma enhanced atomic deposition technique. Organic dielectric was spin coated on the gate metal. The structure of prepared TFT is bottom gate type and top contact structure. The characterization of oxide TFT was performed. We obtained the mobility of $0.7cm^2$/Vs, the threshold voltage of -14V, and the on-off ratio of $10^4$. We also obtained good output characterization with solid saturation.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.11 no.5
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• pp.307-314
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• 1986

Propagation constants for TMon and TEon modes in a circular waveguide with a ring type dielectri are computed using the numerical analysis when the width of dielectric is varied regularly. This structure can be applied to the supporter to make improve the Q-factor of dielectric resonators, and the results of numerical calculation can be used to design the slow wave structures. Also, the numerical analysis in this paper can be used to determine the resonant frequencies in dielectric resonators.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.6
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• pp.43-49
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• 1997

Tungsten poycide has studied gate oxide reliability and dielectric strength charactristics as the composition of gate electrode which applied submicron on CMOS and MOS device for optimizing gate electrode resistivity. The gate oxide reliability has been tested using the TDDB(time dependent dielectric breakdwon) and SCTDDB (stepped current TDDB) and corelation between polysilicon and WSi$_{2}$ layer. iN the case of high intrinsic reliability and good breakdown chracteristics on polysilicon, confirmed that tungsten polycide layer is a better reliabilify properities than polysilicon layer. Also, hole trap is detected on the polysilicon structure meanwhile electron trap is detected on polycide structure. In the case of electron trap, the WSi$_{2}$ layer is larger interface trap genration than polysilicon on large POCL$_{3}$ doping time and high POCL$_{3}$ doping temperature condition. WSi$_{2}$ layer's leakage current is less than 1 order and dielectric strength is a larger than 2MV/cm.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.130-135
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• 2003

Low dielectric constant SiOC(-H) films have been prepared by inductively coupled plasma chemical vapor deposition using bis-trymethylsilyl-methane (BTMSM) and $O_2$ precursors. The annealing effects on the structural and electrical properties were studied. The results indicate post-annealing could efficiently remove the hydroxyl (-OH) related groups from the as-deposited films and cause the chemical structure re-arrangement, resulting in the more nano-pores being formed in the annealed SiOC(-H) films. The dielectric constant decreased from 2.7 to 2.1, and the refractive index decreased from 1.427 to 1.32.

• Proceedings of the KIEE Conference
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• 1993.07a
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• pp.24-26
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• 1993

The dielectric properties of pressboard depend on the chemical and fine structures as well as on the macroscopic structure of pressboard. The investigate on the dielectric characteristics of pressboard therefore, provides an important approach to an understanding of the correlation between the characteristics and the structure of pressboard. The purpose of this research is to investigate the dielectric properties of pressboard.

• Journal of the Korean Society of Safety
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• v.11 no.1
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• pp.67-74
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• 1996

In order to investigate the effect and reliability coming up to properties of the matter due to the change of solid structure in dielectrics, the effect of dielectric characteristics for thermal treated LDPE film was made researches. Specimens of LDPE with thickness 100 [$\mu\textrm{m}$] were investigated into the change of solid structure by ageing. Thermal treated specimen were made, that were after applying heat at 100 [$^{\circ}C$] for 1 [hour] \circled1 air-cooled specimen slowly, \circled2 water-cooled specimen under the ,com temperature, \circled3 liquid nitrogen gas-cooled specimen rapidly. With specimen of thermal treated three types turn out and original, it was for dielectric characteristics to be experimented in the temperature range of 20~120 [$^{\circ}C$], frequency range of 30~1.5${\times}10^5/$[Hz], appling voltage from 300 to 1500[㎷]. Consequently, the degree of crystallinity was changed with 49~57 [%] according to the thermal treatment. In case of frequency, 100 [Hz], on the thermal dependance in dielectric characteristics, tan decreases due to cooling method.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.558-560
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• 1993

The dielectric properties of pressboard depend on the chemical and fine structures as well as on the macroscopic structure of pressboard. The investigate on the dielectric characteristics of pressboard, therefore, provides an important approach to an understanding of the correlation between the characteristics and the structure of pressboard. The purpose of this research is to investigate the dielectric properties of pressboard.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.20.2-20.2
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• 2011

BMNO dielectric materials with a pyrochlore structure have been chosen and they have quite high dielectric constants about 210 for the bulk material. In the case of thin films, 200-nm-thick BMNO films deposited at room temperature showed a low leakage current density of about $10^{-8}\;A/cm^2$ at 3 V and a dielectric constant of about 45 at 100 kHz. Because high dielectric constant BMNO thin films kept an amorphous phase at a high temperature above $900^{\circ}C$. High dielectric constant BMNO thin films grown at room temperature have many applications for flexible electronic devices. However, because the dielectric constant of the BMNO films deposited at room temperature is still low, percolative BMNO films (i.e., those were grown in a pure argon atmosphere) sandwiched between ultra-thin BMNO films grown in an oxygen and argon mixture have greater dielectric constants than standard BMNO films. However, they still showed a leakage problem at a high voltage application. Accordingly, a new nano-structure that uses BMNO was required to construct the films with a dielectric constant higher than that of its bulk material. The fundamental reason that the BMNO-Bi nano-composite films grown by RF-Sputtering deposition had a dielectric constant higher than that of the bulk material was addressed in the present study. Also we used the graphene as bottom electrode instead of the Cu bottom electrode. At first, we got the high leakage current density value relatively. but through this experiment, we could get improved leakage current density value.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.621-624
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• 1998

This paper presents a new configuration of dielectric bandpass filter using the comb-line filter design theory. This filter is composed of a homogeneous dielectric monoblock $(\varepsilonr=35.5)$ with two metal post and a dielectric sheet $(\varepsilonr=9.8).$ In this structure, the RF leakage is suppressed without other shield housing. For the fabricated filter, insertion loss value in the passband region was 0.9dB(Max.) and return loss value was 19dB(Min). Also, this filter has a attenuation pole in the stopband.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.1
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• pp.1-7
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• 1988

A new type broadband channel dropping filter which has a potential use as a millimeter-wave multiplexer has been realized by properly connecting 3-dB directional couplers and bandstop filters. 90\ulcorner3-dB directional couplers have been designed using two nonuniformly coupled dielectric image guides, while bandstop filters with Chebyshev passbands have been designed using dielectric image-guide grating structure. Effective dielectric constant method has been aplied to the image-guide dispersion analysis and to the design of bandstop gratings and 3-dB couplers. Experimental results in excellent agreement with computed responses are demonstrated.