• Korean Journal of Materials Research
• /
• v.26 no.8
• /
• pp.427-429
• /
• 2016

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.

• Journal of the Korean Ceramic Society
• /
• v.31 no.2
• /
• pp.171-176
• /
• 1994

The spin-casted PLZT(9/65/35) thin films through polymeric sol-gel process were prepared on Pt substrate. The crack-free, uniform and dense films were obtained by post-annealing at the temperature between 35$0^{\circ}C$ and $700^{\circ}C$. The composite structure mixed together with large grains called "rosette" and surrounding small grains were observed on the films annealed over $600^{\circ}C$. Pyrochlore phase was completely changed to perovskite phase above $600^{\circ}C$ with the increase of annealing temperature. Dielectric constant (k) was larger with the increase of film thickness and annealing temperature. from the measurements of dielectric constant as a function of measuring temperature, it was also observed that Curie temperature was shifted to higher temperature with the increase of film thickness and annealing temperature. The pyroelectric coefficient(P) of 10 times coated film annealed at $700^{\circ}C$ was 65 $\mu$C/$\textrm{cm}^2$.K.$.K.

• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1649-1651
• /
• 2001

The effect of ribbed spacers having metallic particle attached to the post-type spacer on dielectric breakdown phenomena has been investigated using electric field analysis for imaginary streamer process and a breakdown experiment. It was described that the electric field analysis and the dielectric breakdown test were performed on the case that the particle was attached to the various position of the ribbed spacer having various shapes. As a result, the breakdown voltage of the spacer with two ribs was highest, and it was varied by the length and the thickness of the rib. Especially, in case of the rib with round edge, the breakdown voltage was higher than that with rectangular edge, which complied with the result through the field analysis.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.1
• /
• pp.44-50
• /
• 1993

In an attempt to improve the electrical characteristics of tantalum pentoxide dielectric film, silicon substrate was reacted with a nitrogen plasma to form a silicon nitride of 50.angs. and then tantalum pentoxide thin films were formed by reactive sputtering in the same chamber. Breakdown field and leakage current density were measured to be 2.9 MV/cm and 9${\times}10^{8}\;A/cm^{2}$ respectively in these films whose thickness was about 180.angs.. With annealing at rectangular waveguides with a slant grid are investigated here. In particular, 900.deg. C in oxygen ambient for 100 minutes, breakdown field and leakage current density were improved to be 4.8 MV/cm and 1.61.6${\times}10^{8}\;A/cm^{2}$ respectively. It turned out that the electrical characteristics could also be improved by oxygen plasma post-treatment and the conduction mechanism at high electric field proved to be Schottky emission in these double-layered films.

• Proceedings of the KIEE Conference
• /
• 1987.11a
• /
• pp.216-219
• /
• 1987

Dielectric and Mechanical Properties of Mica flake/ Epoxy Composite are investigated. The Mica content is about 50 wt % and its thickness is about $240{\mu}m$. The finished Mica flake/Epoxy Composite contains about 0.1-1.0 wt % of aminosilane coupling agent. Ruby Mica filler and high temperature curing Epoxy resin are used. From the viewpoint of dielectric and mechanical properities. the optimum properties is obtained for the sample post cured at $130^{\circ}C$ for 5 h ours after curing at $80^{\circ}C$ for 2 hours and with 0.5 weight % silane coupling agent.

• Journal of Korean Vacuum Science & Technology
• /
• v.2 no.1
• /
• pp.25-31
• /
• 1998

The reliability of fluorine doped silicon oxide (SiOF) films for intermetal dielectrics in multilevel interconnections of ultra-large scale integrated circuits (ULSIs) is investigated. SiOF films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECRPECVD) using H-free source gases, i.e., SiF4 and O2. The effect of post plasma treatment on the moisture absorption and dielectric properties of SiOF films was carried out I terms of air exposure time, The reliability test of Cu/TiN/SiOF/Fi specimen was carried out in terms of temperature by rapid thermal annealing (RTA) in N2 ambient. After O2 plasma treatment,, no appreciable peak directly related to moisture absorption was detected. The capacitance-voltage (C-V) characteristics of the O2 plasma treated SiOF film showed that the film remained to hold the sound dielectric properties even after boiling treatment. The Cu/TiN/SiOF/Si system was found to be reliable up to $600^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.7
• /
• pp.521-524
• /
• 2012

We report on variations of electrical properties with different active layer thickness and post-annealing temperature in amorphous In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). In particular, subthreshold swing (SS) of the IGZO-TFTs was improved as increasing the active layer thickness at an given post-annealing temperature, accompanying the negative shift in turn-off voltage. However, as increasing post-annealing temperature, only turn-off voltage was shifted negatively with almost constant SS value. The effect of the active layer thickness and post-annealing temperature on electrical properties, such as SS, field effect mobility and turn-off voltage in IGZO-TFTs has been explained in terms of the variation of trap density in IGZO channel layer and at gate dielectric/IGZO interface.

• Proceedings of the Korean Society of Crop Science Conference
• /
• 2022.10a
• /
• pp.330-330
• /
• 2022

In recent studies, cold plasma has been used to induce exudation of polyphenols and flavonoids from food materials, leading to enhancement of functional properties. And it is known that polyphenols interact with inflammation related metabolism. The objectives of this study were to investigate the effects of cold plasma treatments on the increase of total phenolic content (TPC), total flavonoid content (TFC), and anti-inflammatory activities of 'Sinpalkwang' peanut (Arachis hypogaea L.) hull. Plasma treatments were carried out using a dielectric barrier discharge gas exchange system at different radicals and temperatures (O₃-25℃, O₃-150℃, NO_x-150℃). Significant differences in TPC, TFC, and inflammatory mediator such as nitric oxide (NO) and tumor necrosis factor a (TNF-α) in lipopolysaccharide stimulated Raw 264.7 macrophages were observed between treated and non-treated peanut hull samples (p < 0.001). Cold plasma treated samples showed higher content (TPC: 2.87-2.93 mg/g sample, TFC: 0.96-0.98 mg/g sample) than non-treated sample (TPC: 2.47 mg/g sample, TFC: 0.78 mg/g sample). Cold plasma treated samples showed lower content of NO (3.3-5.0 uM) and TNF-α (141.4-162.2 ng/mL) than non-treated sample (NO: 11.1 uM, TNF-α: 210.2 ng/mL). This study suggests that cold plasma has potential to improve functionalities of food materials and that cold plasma treated peanut hull can be used as immune enhancing materials.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.14 no.12
• /
• pp.1292-1299
• /
• 2003

In this paper, we fabricated new GaAs-based dielectric-supported air gapped microstriplines(DAMLs) using the surface MEMS and the LPF for Ka-band using the fabricated DAMLs. We elevated the signal lines from the substrate, in order to reduce the substrate dielectric loss and obtain low losses at millimeter-wave frequency band with wide impedance range. We fabricated LPF with DAMLs for Ka-band. Due to reducing the dielectric loss of DAMLs, the insertion loss of LPF can be reduced. Miniature is essential to integrate LPF with active devices, so that we fabricated LPF with the slot on the ground to reduce the size of the LPF. We compared a characteristic to LPF with the slot and LPF without the slot.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.03a
• /
• pp.21-21
• /
• 2010

(Ba,Sr)$TiO_3$ (BST) thin film with a perovskite structure has potential for the practical application in various functional devices such as nonvolatile-memory components, capacitor, gate insulator of thin-film transistors, and electro-optic devices for display. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below $600^{\circ}C$. For the purpose of integrating BST thin film directly into a Si-based read-out integrated circuit (ROIC), it is necessary to process the BST film below $400^{\circ}C$. The microstructural and electrical properties of low-temperature crystallized BST film were studied. The BST thin films have been fabricated at $350^{\circ}C$ by UV-assisted rapidly thermal annealing (RTA). The BST films are in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss, low leakage current density, and high breakdown voltage. Photoexcitation of the organics contained in the sol-gel-derived films by high-intensity UV irradiation facilitates elimination of the organics and formation of the single-crystalline phase films at low temperatures. The amorphous BST thin film was transformed to a highly (h00)-oriented perovskite structure by high oxygen pressure processing (HOPP) at as low as $350^{\circ}C$. The dielectric properties of BST film were comparable to (or even better than) those of the conventionally processed BST films prepared by sputtering or post-annealing at temperature above $600^{\circ}C$. When external pressure was applied to the well-known contractive BST system during annealing, the nucleation energy barrier was reduced; correspondingly, the crystallization temperature decreased. The UV-assisted RTA and HOPP, as compatible with existing MOS technology, let the BST films be integrated into radio-frequency circuit and mixed-signal integrated circuit below the critical temperature of $400^{\circ}C$.