• Journal of Korean Society of Environmental Engineers
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• v.37 no.1
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• pp.60-68
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• 2015

The study of waste activated sludge (WAS) solubilization has been increased for sludge volume reduction and enhancing the efficiency of anaerobic digestion. Microwave (MW)-assisted solubilization is an effective method for the solubilization of WAS because this method can lead to thermal, nonthermal effect and ionic conduction by dielectric heating. In this study, the solubilization of WAS by MW heating and conductive heating (CH) was compared and to enhance the MW-assisted solubilization of WAS at low MW output power, chemical agents were applied such as $H_2SO_4$ as the strong acid and $CaCl_2$, NaCl as the ionic materials. Compared to the COD solubilization of WAS by CH, that by MW heating was approximately 1.4, 6.2 times higher at $50^{\circ}C$, $100^{\circ}C$, respectively and the highest COD solubilization of WAS was 10.0% in this study of low MW output power condition. At the same MW output power and reaction time in chemically agents assisted experiments, the COD solubilization of WAS were increased up to 18.1% and 12.7% with the addition of $H_2SO_4$ and NaCl, however, that with the addition of $CaCl_2$ was 10.7%. This result might be due to the fact that the precipitation reaction occurred by calcium ion ($Ca^{2+}$) and phosphate ion (${PO_4}^{3-}$) produced in WAS after MW-assisted solubilization. In this study, $H_2SO_4$ turned out to be the optimal agent for the enhancement of MW efficiency, the addition of 0.2 M $H_2SO_4$ was the most effective condition for MW-assisted WAS solubilization.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.83-90
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• 2023

The β-Ga₂O₃ has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga₂O₃ has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga₂O₃ single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga₂O₃ single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga₂O₃ were prepared by adding different mole ratios of SnO₂ powder to Ga₂O₃ powder, and β-Ga₂O₃ single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga₂O₃ single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga₂O₃ single crystal according to the Sn doping were extensively investigated.