• Title/Summary/Keyword: Dielectric Coating

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Sol-gel Coating of ZrO2 Film in Aluminium Etch Pit and Anodizing Properties (알루미늄 에치피트에 ZrO2 막의 졸-겔 코팅 및 양극산화 특성)

  • Chen, Fei;Park, Sang-Shik
    • Korean Journal of Materials Research
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    • v.24 no.5
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    • pp.259-265
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    • 2014
  • $ZrO_2$ films were coated on aluminum etching foil by the sol-gel method to apply $ZrO_2$ as a dielectric material in an aluminum(Al) electrolytic capacitor. $ZrO_2$ films annealed above $450^{\circ}C$ appeared to have a tetragonal structure. The withdrawal speed during dip-coating, and the annealing temperature, influenced crack-growth in the films. The $ZrO_2$ films annealed at $500^{\circ}C$ exhibited a dielectric constant of 33 at 1 kHz. Also, uniform $ZrO_2$ tunnels formed in Al etch-pits $1{\mu}m$ in diameter. However, $ZrO_2$ film of 100-200 nm thickness showed the withstanding voltage of 15 V, which was unsuitable for a high-voltage capacitor. In order to improve the withstanding voltage, $ZrO_2$-coated Al etching foils were anodized at 300 V. After being anodized, the $Al_2O_3$ film grew in the directions of both the Al-metal matrix and the $ZrO_2$ film, and the $ZrO_2$-coated Al foil showed a withstanding voltage of 300 V. However, the capacitance of the $ZrO_2$-coated Al foil exhibited only a small increase because the thickness of the $Al_2O_3$ film was 4-5 times thicker than that of $ZrO_2$ film.

Numerical study of a coating with pigment to selectively reflect the thermal radiation from fire (화염 열복사의 파장별 선택적 반사를 위한 도료 코팅에 대한 수치적 연구)

  • Byeon, Do-Yeong;Baek, Seung-Uk
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.22 no.3
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    • pp.399-407
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    • 1998
  • The infrared reflection coatings with pigment can be used to protect the surfaces of combustible materials exposed to fire. To obtain high reflectivities in the infrared range (0.5-10.mu.m) important to fire, several dielectric pigments, such as titanium dioxide, iron oxide, and silicon, can be synthesized to polymer coatings. The theoretical analysis shows that the coating design with particles diameter in the 1.5 to 2.5.mu.m range and volume fraction in the 0.1 to 0.2 range is estimated to be optimal. In the analysis of the radiation, the dependent scattering, absorption by polymeric binder, and the internal interface reflection are considered. In addition, the temperature distribution in the semi-transparent coating layer and an opaque substrate (PMMA) is also presented.

Anti-reflection coating on the facet of a spot size converter integrated laser diode using a pair of TiO2 and SiO2 thin films (TiO2와 SiO2 박막 쌍을 이용한 광모드 변환기가 집적된 반도체 레이저 단면의 무반사 코팅)

  • 송현우;김성복;심재식;김제하;오대곤;남은수
    • Korean Journal of Optics and Photonics
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    • v.13 no.5
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    • pp.396-399
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    • 2002
  • Using a bi-layer anti-reflection coating of $TiO_2$and $SiO_2,$ we have achieved a minimum facet reflectivity of $~10^{-5}$ and a band width of 27 nm for a reflectivity of $~10^{-4}$ or less for 1.3 $\mu\textrm{m}$ spot size converter integrated semiconductor lasers. This coating is applicable to external-cavity-tuned laser sources and semiconductor optical amplifiers.

Dielectric characteristics with poling of P(VDF/TrFE) films for pyroelectric infrared sensor (초전형 적외선 센서용 P(VDF/TrFE) 막의 분극에 따른 유전특성의 변화)

  • Kwon, Sung-Yeol;Kim, Young-Woo;Baem, Seung-Choon;Park, Sung-Kun;Kim, Ki-Wan
    • Journal of Sensor Science and Technology
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    • v.9 no.1
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    • pp.9-14
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    • 2000
  • Dielectric characteristics of P(VDF/TrFE) film manufactured using spin coating technique have been investigated. To improve the crystallinity and quality of film, the film was three step annealed. Simple etching process and conditions for P(VDF/TrFE) film were established using top electrode as a mask. Poling is performed by several steps. $1.87\;{\mu}m$ thick P(VDF/TrFE) films were obtained with conditions such that the solution of 10 wt% concentration was spun at 3000rpm for 30 seconds. Before poling, dielectric constant and dielectric loss of P(VDF/TrFE) film were 13.5 and 0.042, respectively. After poling, dielectric constant and dielectric loss of P(VDF/TrFE) film were 11.5 and 0.037, respectively.

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The Fabrication and Characteristics of 0-3 PbTiO$_3$/P(VDF/TrFE) Nanocomposite Thin Films for Passive Pyroelectric Infrared Sensors

  • Kwon, Sung-Yeol
    • KIEE International Transactions on Electrophysics and Applications
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    • v.4C no.2
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    • pp.73-76
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    • 2004
  • 0-3 PbTiO$_3$/P(VDF/TrFE) nanocomposite thin films for passive pyroelectric infrared sensors were fabricated by a two-step spin coating technique. 65wt% VDF and 35 wt% TrFE was formed into a P(VDF/TrFE) powder. Nano size PbTiO$_3$ powder was used. 0-3 connectivity of PbTiO$_3$/P(VDF/TrFE) composite film was successfully achieved and observed using SEM photography. The dielectric constant and pyroelectric coefficient were measured and compared with P(VDF/TrFE). A very low dielectric constant (13.48 at 1KHz and sufficiently high pyroelectric coefficient (3.101 nC/$\textrm{cm}^2$ㆍk at 5$0^{\circ}C$) were measured. This nanocomposite can be used for a new pyroelectric infrared sensor to achieve better performance.

A study on the Etching and Dielectric Properties of PZT Thin Films with Excess Pb Contents (Pb 함량에 따른 PZT 박막의 식각 및 유전특성에 관한 연구)

  • Kim, Kyoung-Tae;Lee, Sung-Gap;Kim, Chang-Il;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.04b
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    • pp.56-59
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    • 2000
  • In this study, Ferroelectric $Pb(Zr_x,Ti_{1-x})O_3$(x=0.53) thin films were fabricated by the spin-coating on the Pt/Ti/$SiO_2$/Si substrate using the PZT metal alkoxide solutions with various excess Pb contents. Etching of PZT film was performed using planar inductively coupled Ar(20)$/Cl_2/BCl_3$ plasma. The etch rate of PZT film was 2450 ${\AA}/min$ at Ar(20)$/BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. The leakage current densities of before etching and after etching PZT thin film were $6.25\times10^{-8}A/cm^2$, $8.74\times10^{-7}A/cm^2$ with electric field of 0.07MV/em, respectively.

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Plasma-immersion ion Deposition of Hydrogenated Diamond-like Carbon Films on Dielectric Substrates

  • Kon;Chun, Hui-Gon;Cho, Tong-Yul;Nikolay S. Sochugov;You, Yong-Zoo
    • Journal of Korean Vacuum Science & Technology
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    • v.6 no.4
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    • pp.143-148
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    • 2002
  • Method of plasma-immersion ion deposition of hydrogenated DLC films on relatively thick flat dielectric substrates from plasma of not-self-sustained low-pressure gas arc discharge is suggested. Coating properties have been investigated experimentally, average energy Per a deposited carbon atom depending on discharge current has been calculated. Optimum deposition parameters lot obtaining sufficiently hard and transparent high-adhesive a-C:H films on a 4-mm thick glass substrates have been determined. Possibility to use these coatings for photo-tools protection from abrasion wear at low operating loads is shown in general.

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Electronic properties of PZT(20/80) thick film and PZT(80/20) thin film multilayer with variation of sintering temperature (다층 PZT(20/80)후막과 PZT(80/20)박막의 소결온도에 따른 전기적 특성)

  • Noh, Hyun-Ji;Lee, Sung-Gap;Park, Sang-Man;Bae, Seon-Gi
    • Proceedings of the KIEE Conference
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    • 2006.07d
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    • pp.2209-2210
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    • 2006
  • In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coaled on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field wore 16.48 ${\mu}C/cm^2$ and 35.48kV/cm, respectively.

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Electronic properties of PZT(20/80) thick film and PZT(80/20) thin film multilayer with variation of sintering temperature (다층 PZT(20/80)후막과 PZT(80/20)박막의 소결온도에 따른 전기적 특성)

  • Noh, Hyun-Ji;Lee, Sung-gap;Park, Sang-Man;Bae, Seon-Gi
    • Proceedings of the KIEE Conference
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    • 2006.07a
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    • pp.577-578
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    • 2006
  • In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at 650f showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were 16.48${\mu}C/cm^2$ and 35.48kV/cm, respectively.

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Properties of Spin-On-Glass Siloxane Thin Films Fluorine-doped by CF$_4$ Plasma (CF$_4$ 플라즈마 처리로 불소를 첨가한 실록산 Spin-On-Glass 박막의 특성)

  • 김현중;김기호
    • Journal of the Korean institute of surface engineering
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    • v.34 no.3
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    • pp.258-263
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    • 2001
  • Siloxane thin films were fabricated on a silicon wafer by spin-coating using a siloxane solution made by the sol-gel process. Fluorine was doped using$ CF_4$ plasma treatment. The film was then annealed in-situ state in the nitrogen atmosphere. In order to examine the influence of annealing and fluorine doping on the siloxane thin film, thermogravimetric-differential thermal analysis (TG-DTA), Fourier transform-infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used and the dielectric constant was determined by the high-frequency capacitance-voltage method. Stable siloxane films could be obtained by in-situ annealing in a nitrogen atmosphere after $CF_4$ plasma treatment, and the dielectric value of the film was $\varepsilon$ 2.5.

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