• 한국재료학회지
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• 제24권5호
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• pp.259-265
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• 2014

$ZrO_2$ films were coated on aluminum etching foil by the sol-gel method to apply $ZrO_2$ as a dielectric material in an aluminum(Al) electrolytic capacitor. $ZrO_2$ films annealed above $450^{\circ}C$ appeared to have a tetragonal structure. The withdrawal speed during dip-coating, and the annealing temperature, influenced crack-growth in the films. The $ZrO_2$ films annealed at $500^{\circ}C$ exhibited a dielectric constant of 33 at 1 kHz. Also, uniform $ZrO_2$ tunnels formed in Al etch-pits $1{\mu}m$ in diameter. However, $ZrO_2$ film of 100-200 nm thickness showed the withstanding voltage of 15 V, which was unsuitable for a high-voltage capacitor. In order to improve the withstanding voltage, $ZrO_2$-coated Al etching foils were anodized at 300 V. After being anodized, the $Al_2O_3$ film grew in the directions of both the Al-metal matrix and the $ZrO_2$ film, and the $ZrO_2$-coated Al foil showed a withstanding voltage of 300 V. However, the capacitance of the $ZrO_2$-coated Al foil exhibited only a small increase because the thickness of the $Al_2O_3$ film was 4-5 times thicker than that of $ZrO_2$ film.

• 대한기계학회논문집B
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• 제22권3호
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• pp.399-407
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• 1998

The infrared reflection coatings with pigment can be used to protect the surfaces of combustible materials exposed to fire. To obtain high reflectivities in the infrared range (0.5-10.mu.m) important to fire, several dielectric pigments, such as titanium dioxide, iron oxide, and silicon, can be synthesized to polymer coatings. The theoretical analysis shows that the coating design with particles diameter in the 1.5 to 2.5.mu.m range and volume fraction in the 0.1 to 0.2 range is estimated to be optimal. In the analysis of the radiation, the dependent scattering, absorption by polymeric binder, and the internal interface reflection are considered. In addition, the temperature distribution in the semi-transparent coating layer and an opaque substrate (PMMA) is also presented.

• 한국광학회지
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• 제13권5호
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• pp.396-399
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• 2002

전자선 증착기를 이용하여 1.3$\mu\textrm{m}$ 광모드 변환기가 집적된 반도체 레이저 출력 단면에 $SiO_2$와 $TiO_2$ 두 개의 박막 층으로 무반사 증착 하였다. 증착 단면의 최소 단면 반사율 $~ 10^{-5}$을 얻었고, $~ 10^{-4}$이하 단면 반사율 밴드 폭은 약 27nm임을 측정하였다. 이러한 코팅은 외부 공진기 레이저 광원 및 반도체 광 증폭기 등에 응용 가능하다.

• 센서학회지
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• 제9권1호
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• pp.9-14
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• 2000

스핀 코팅 방법으로 제조된 P(VDF/TrFE) 막의 유전적 특성을 조사하였다. 막의 결정성과 막질을 개선하기 위해 스핀 코팅 후에 3 단계에 걸친 열처리 공정을 하였다. 상부전극을 마스크로 사용하는 간단한 P(VDF/TrFE) 막의 식각공정과 조건을 확립하였다. 분극을 여러 단계에 걸쳐 하는 정확한 분극공정을 실현하였다. 스핀코팅으로 제조된 막의 두께는 용액농도 10 wt%, 스핀속도 3000 rpm, 스핀시간 30초에서 $1.87\;{\mu}m$였다. 제조된 P(VDF/TrFE) 막의 유전상수와 유전손실을 측정하였다. 1 kHz의 주파수에서 분극전 P(VDF/TrFE) 막의 유전상수는 13.5, 유전 손실은 0.042로 나타났으며 분극후 각각 11.5, 0.037로 나타났다.

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권2호
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• pp.73-76
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• 2004

0-3 PbTiO$_3$/P(VDF/TrFE) nanocomposite thin films for passive pyroelectric infrared sensors were fabricated by a two-step spin coating technique. 65wt% VDF and 35 wt% TrFE was formed into a P(VDF/TrFE) powder. Nano size PbTiO$_3$ powder was used. 0-3 connectivity of PbTiO$_3$/P(VDF/TrFE) composite film was successfully achieved and observed using SEM photography. The dielectric constant and pyroelectric coefficient were measured and compared with P(VDF/TrFE). A very low dielectric constant (13.48 at 1KHz and sufficiently high pyroelectric coefficient (3.101 nC/$\textrm{cm}^2$ㆍk at 5$0^{\circ}C$) were measured. This nanocomposite can be used for a new pyroelectric infrared sensor to achieve better performance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.56-59
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• 2000

In this study, Ferroelectric $Pb(Zr_x,Ti_{1-x})O_3$(x=0.53) thin films were fabricated by the spin-coating on the Pt/Ti/$SiO_2$/Si substrate using the PZT metal alkoxide solutions with various excess Pb contents. Etching of PZT film was performed using planar inductively coupled Ar(20)$/Cl_2/BCl_3$ plasma. The etch rate of PZT film was 2450 ${\AA}/min$ at Ar(20)$/BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. The leakage current densities of before etching and after etching PZT thin film were $6.25\times10^{-8}A/cm^2$, $8.74\times10^{-7}A/cm^2$ with electric field of 0.07MV/em, respectively.

• Journal of Korean Vacuum Science & Technology
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• 제6권4호
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• pp.143-148
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• 2002

Method of plasma-immersion ion deposition of hydrogenated DLC films on relatively thick flat dielectric substrates from plasma of not-self-sustained low-pressure gas arc discharge is suggested. Coating properties have been investigated experimentally, average energy Per a deposited carbon atom depending on discharge current has been calculated. Optimum deposition parameters lot obtaining sufficiently hard and transparent high-adhesive a-C:H films on a 4-mm thick glass substrates have been determined. Possibility to use these coatings for photo-tools protection from abrasion wear at low operating loads is shown in general.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 D
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• pp.2209-2210
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coaled on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field wore 16.48 ${\mu}C/cm^2$ and 35.48kV/cm, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 A
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• pp.577-578
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at 650f showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were 16.48${\mu}C/cm^2$ and 35.48kV/cm, respectively.

• 한국표면공학회지
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• 제34권3호
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• pp.258-263
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• 2001

Siloxane thin films were fabricated on a silicon wafer by spin-coating using a siloxane solution made by the sol-gel process. Fluorine was doped using$ CF_4$ plasma treatment. The film was then annealed in-situ state in the nitrogen atmosphere. In order to examine the influence of annealing and fluorine doping on the siloxane thin film, thermogravimetric-differential thermal analysis (TG-DTA), Fourier transform-infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used and the dielectric constant was determined by the high-frequency capacitance-voltage method. Stable siloxane films could be obtained by in-situ annealing in a nitrogen atmosphere after $CF_4$ plasma treatment, and the dielectric value of the film was $\varepsilon$ 2.5.