• 제목/요약/키워드: Dicing

검색결과 81건 처리시간 0.027초

반도체 웨이퍼용 스크라이빙 머신의 개발 (Development of Scribing Machine for Semiconductor Wafer)

  • 차영엽;최범식;고경용
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2000년도 제15차 학술회의논문집
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    • pp.222-222
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    • 2000
  • The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But inferior goods are made under the influence of several parameters in dicing such as blade, wafer, cutting water and cutting conditions. Moreover we can not applicable this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer as GaAs. In older to overcome this problem, a new dicing process is necessary. This paper describes a new machine using scriber and precision servo mechanism in order to dice a semiconductor wafer.

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Development of Semiconductor Packaging Technology using Dicing Die Attach Film

  • Keunhoi, Kim;Kyoung Min, Kim;Tae Hyun, Kim;Yeeun, Na
    • 센서학회지
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    • 제31권6호
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    • pp.361-365
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    • 2022
  • Advanced packaging demands are driven by the need for dense integration systems. Consequently, stacked packaging technology has been proposed instead of reducing the ultra-fine patterns to secure economic feasibility. This study proposed an effective packaging process technology for semiconductor devices using a 9-inch dicing die attach film (DDAF), wherein the die attach and dicing films were combined. The process involved three steps: tape lamination, dicing, and bonding. Following the grinding of a silicon wafer, the tape lamination process was conducted, and the DDAF was arranged. Subsequently, a silicon wafer attached to the DDAF was separated into dies employing a blade dicing process with a two-step cut. Thereafter, one separated die was bonded with the other die as a substrate at 130 ℃ for 2 s under a pressure of 2 kgf and the chip was hardened at 120 ℃ for 30 min under a pressure of 10 kPa to remove air bubbles within the DAF. Finally, a curing process was conducted at 175 ℃ for 2 h at atmospheric pressure. Upon completing the manufacturing processes, external inspections, cross-sectional analyses, and thermal stability evaluations were conducted to confirm the optimality of the proposed technology for application of the DDAF. In particular, the shear strength test was evaluated to obtain an average of 9,905 Pa from 17 samples. Consequently, a 3D integration packaging process using DDAF is expected to be utilized as an advanced packaging technology with high reliability.

GAN 웨이퍼의 다이싱 (Dicing of GAN Wafer)

  • 최범식;차영엽
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 1997년도 추계학술대회 논문집
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    • pp.484-487
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    • 1997
  • The dicing is a process of gaining chip from a wafer. It is done by some mechanism to lengthwise and crosswise. Here, it is focused on measuring a depth of the wafer hefore a process of the dicing. First of all, it checks a precise outer position for the wafer on table to gain the chip. Second, the xafer should he lined after Imowing how much depth, it is in out of the outer position of the wafer. Here suggests that there are a composition of mechanical system, how to measure a depth out of scriber axis, a result from testing.

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실리콘 웨이퍼에 2중 다이싱 공정의 도입이 반도체 디바이스의 T.C. 신뢰성에 미치는 영향 (Effect of Dual-Dicing Process Adopted for Silicon Wafer Separation on Thermal-Cycling Reliability of Semiconductor Devices)

  • 이성민
    • 마이크로전자및패키징학회지
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    • 제16권4호
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    • pp.1-4
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    • 2009
  • 본 연구에서는 실리콘 웨이퍼에 2중 다이싱 공정의 적용이 리드-온-칩 패키지로 조립되는 반도체 디바이스의 T.C. ($-65^{\circ}C$에서 $150^{\circ}C$까지의 온도변화에 지배되는 신뢰성 실험) 신뢰성에 어떠한 영향을 미치는 지를 보여준다. 기존 싱글 다이싱 공정은 웨이퍼에서 분리된 디바이스의 테두리 부위가 다이싱으로 인해 기계적으로 손상되는 결과를 보였으나, 2중 다이싱 공정은 분리된 디바이스의 테두리 부위가 거의 손상되지 않고 보존되는 것을 확인할 수 있었다. 이는 2중 다이싱의 경우 다이싱 동안 웨이퍼의 전면에 도입된 노치부위가 선택적으로 파손되면서 분리된 디바이스의 테두리 부위를 보호하기 때문으로 해석된다. 온도변화 실험을 통해 2중 다이싱 공정의 도입이 단일 다이싱 공정에 비해 T.C. 신뢰성에서도 대단히 좋은 결과를 보인다는 것을 확인할 수 있었다.

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반도체 웨이퍼용 브레이킹 머신의 개발 (Development of Breaking Machine for Semiconductor Wafer)

  • 차영엽;최범식
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2000년도 추계학술대회 논문집
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    • pp.729-732
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    • 2000
  • The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But inferior goods are made under the influence of several parameters in dicing such as blade, wafer, cutting water and cutting condition. Moreover we can not applicable this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer as GaAs. In order to overcome this problem, a new dicing process is necessary. This paper describes a new machine using scriber, breaker, and precision servo mechanism in order to dice an semiconductor wafer.

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레이저를 이용한 웨이퍼 다이싱 특성 분석

  • 이용현;최경진;유승렬;양영진;배성창
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2006년도 춘계학술대회
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    • pp.251-254
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    • 2006
  • In this paper, cutting qualifies and fracture strength of silicon dies by laser dicing are investigated. Laser micromachining is the non-contact process using thermal ablation and evaporation mechanisms. By these mechanisms, debris is generated and stick on the surface of wafer, which is the problem to apply laser dicing to semiconductor manufacture process. Unlike mechanical sawing using diamond blade, chipping on the surface and crack on the back side of wafer isn't made by laser dicing. Die strength by laser dicing is measured via the three-point bending test and is compared with the die strength by mechanical sawing. As a results, die strength by the laser dicing shows a decrease of 50% in compared with die strength by the mechanical sawing.

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Micro-Pressing 방법과 Dicing 방법에 의해 제조된 PZT Ultrasonic Transducer Array의 특성 (Properties of PZT Ultrasonic Transducer Array Fabricated by Micro-Pressing and Dicing method)

  • 박준식;홍성제;조진우;박순섭;한진호
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 하계학술대회 논문집 C
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    • pp.2248-2250
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    • 2000
  • We investigated properties of PZT composite for medical ultrasonic transducer array (briefly UTA) for medicine applications fabricated by micro pressing and dicing method. Dicing method was the fabrication process of conventional ultrasonic transducer array by dicing sintered PZT sheet. Micro pressing method was the proposed process using pressing PZT green sheet by PMMA micro mold from LIGA process. Microstructures, electrical and electro -mechanical properties of fabricated UTAs of two cases were analyzed. Thickness mode electro-mechanical coupling coefficient of two cases have same values of 51%. Sintered PZT Microstructures of them showed dense and uniform. Micro pressing method was very mass productive process because of using batch type LIGA process. From results, we found micro pressing method was more competitive than dicing method for UTA fabrication. For further study, uniformity of microstructures and electro-mechanical properties of large scale, and fabrication processes of Ni plating and PMMA molding should be improved and investigated.

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PC 기반의 다이싱 공정 자동화 시스템 개발

  • 김형태;양해정;송창섭
    • 한국정밀공학회지
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    • 제17권3호
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    • pp.47-57
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    • 2000
  • In this study, PC-based dicing machine and driving software were constructed for the purpose of automation of wafer cutting process. To automate the machine, hard automation including vision, loading, and software were considered in the development. Auto loading device and vision system were adopted for the increase of productivity, GUI software programmed for the expedient operation. The dicing machine is operated by the control algorithm and some parameters. It is verified that this kind of PC based automation has a great potential compared with the conventional dicing machine when applied to manufacturing some kinds of wafers as a test purpose.

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웨이퍼 장착을 이용한 다이싱 척의 평탄도 평가 방법에 관한 연구 (A Study on the Flatness Evaluation Method of the Dicing Chuck using Chucked-wafer)

  • 육인수;이호철
    • 한국공작기계학회논문집
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    • 제17권3호
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    • pp.53-58
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    • 2008
  • This study was conducted to evaluate the flatness of the porous type of dicing chuck. Two measurement systems for a vacuum chuck with a porous type of ceramic plate were prepared using a digital indicator and a laser interferometer. 6 inch of silicon and glass wafer were also used. Vacuum pressure from 100mmHg to 700mmHg by 100mmHg was increased. From experiments, chucked-wafer flatness was converged to the dicing chuck flatness itself even though the repeatability of contact method using indicator was unstable. Finally, the chuck flatness was estimated below $2{\mu}m$ with peak-to valley value.