• 열처리공학회지
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• 제13권5호
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• pp.318-323
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• 2000

The planarization of rough polycrystalline diamond films synthesized by DC arc discharge plasma jet CVD (chemical vapor deposition) was attempted using KrF excimer laser pulses. The effects of laser incidence angle and reaction gases (ozone and oxygen) on etching rate of diamond were studied. The temperature change of diamond and graphite with different laser fluences was calculated by computer simulation to explain the etching behavior of diamond films. The threshold energy density from the experiment for etching of pure crystalline diamond was about $1.7J/cm^2$ and fairly matched the simulation value. Preferential etching of a particular crystallographic plane was observed through scanning electron microscopy. The etching rate of diamond with ozone was lower than that with oxygen. When the angle of incidence was $80^{\circ}$ to the diamond surface normal, the peak-to-valley surface roughness was Significantly reduced from $20{\mu}m$ to $0.5{\mu}m$.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.67-68
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• 2002

The properties and mechanism of silicon protuberance and groove processing by diamond tip sliding using atomic force microscope (AFM) in atmosphere were studied. To control the height of protuberance and the depth of groove, the processed height and depth depended on load and diamond tip radius were evaluated. Nanoprotuberances and grooves were fabricated on a silicon surface by approximately 100-nm-radius diamond tip sliding using an atomic force microscope in atmosphere. To clarify the mechanical and chemical properties of these parts processed, changes in the protuberance and groove profiles due to additional diamond tip sliding and potassium hydroxide (KOH) solution etching were evaluated. Processed protuberances were negligibly removed, and processed grooves were easily removed by additional diamond tip sliding. The KOH solution selectively etched the unprocessed silicon area. while the protuberances, grooves and flat surfaces processed by diamond tip sliding were negligibly etched. Three-dimensional nanofabrication is performed in this study by utilizing these mechanic-chemically processed parts as protective etching mask for KOH solution etching.

• 한국표면공학회지
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• 제49권3호
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• pp.301-306
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• 2016

The effects of nanotexturing and post-etching on the reflection and quantum efficiency properties of diamond wire sawn (DWS) multicrystalline silicon (mc-Si) solar cell have been investigated. The chemical solutions, which are acidic etching solution (HF-$HNO_3$), metal assisted chemical etching (MAC etch) solutions ($AgNO_3$-HF-DI, HF-$H_2O_2$-DI) and post-etching solution (diluted KOH at $80^{\circ}C$), were used for micro- and nano-texturing at the surface of diamond wire sawn (DWS) mc-Si wafer. Experiments were performed with various post-etching time conditions in order to determine the optimized etching condition for solar cell. The reflectance of mc-Si wafer texturing with acidic etching solution showed a very high reflectance value of about 30% (w/o anti-reflection coating), which indicates the insufficient light absorption for solar cell. The formation of nano-texture on the surface of mc-Si contributed to the enhancement of light absorption. Also, post-etching time condition of 240 s was found adequate to the nano-texturing of mc-Si due to its high external quantum efficiency of about 30% at short wavelengths and high short circuit current density ($J_{sc}$) of $35.4mA/cm^2$.

• 대한화학회지
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• 제45권4호
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• pp.351-356
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• 2001

철, 코발트, 니켈 합금을 이용한 탄소확산-수소플라즈마 에칭법으로 다이아몬드 자체막의 표면을 매우 평탄하게 할 수 있었다. 이 방법에서의 다이아몬드 자체막을 합금과 몰리브데늄 기판 사이에 위치시켜 금속-다이아몬드-몰리브데늄(MDM) 샌드위치 형태의 샘플 세 트를 이루게 하였다. 이 샘플세트를 마이크로 웨이브 플라즈마 장치에 장착하여 수소 플라즈마를 발생시켜서 기판온도가 섭씨 1,000 이상이 되도록 하였다. 이와 같은 과정들은 탄소확산-수소플라즈마 방법이라고 하였다. 다이아몬드 자체막 표면을 에칭한 후 표면 거칠기, 표면형상, 에칭한 다이아몬드 표면속의 불순물의 침투를 조사하였다. 결론적으로, 탄소 확산-수소 플라즈마 에칭법은 전자 디바이스에 응용할 수 있는 매우 평탄한 다이아몬드 표면을 형성시키는 방법임을 알 수 있다.

• 한국자원리싸이클링학회:학술대회논문집
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• 한국자원리싸이클링학회 2003년도 추계정기총회 및 국제심포지엄
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• pp.185-189
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• 2003

The effect of surface roughness of the substrate on HF-CVD diamond coating was researched. The surface roughness was changed variously by electro-chemical etching conditions. The etching process acted to remove the metallic cobalt from the WC-Co. Diamond nucleation density was higher in etched the substrate. Therefore, the etching process was effective in both Co-removal and higher surface roughness, leading to the improving the diamond nucleation and deposition.

• Restorative Dentistry and Endodontics
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• 제18권1호
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• pp.114-121
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• 1993

The purpose of this study was to evaluate the effect on treatment methods to shear bond strength between composite resin and amalgam when the alloy surface was finished with a diamond wheel or an sandblaster. Forty round acrylic cylinders were fabricated with a diameter of 33mm and a height of 20mm to fit into the device used during shear bond strength testing. A round undercut cavity (diameter, 8mm: depth, 2.5mm) was prepared in the center of the acrylic surface and the cavity was restored using a amalgam. A total of 40 acrylic cylinders with amalgam were divided into 4 groups according to treatment method. The group treatment were as follows : Group 1 : acid etching after finishing the amalgam with diamond wheel Group 2 : no acid etching after finishing the amalgam with diamond wheel Group 3 : acid etching after sandblasting the amalgam Group 4 : no acid etching after sandblasting the amalgam The shear bond strength of composite resin bonded to amalgam of each specimen was tested with a universal testing machine at a crosshead speed of 0.5mm/min and 500kg in full scale. The results were as follow: 1. After diamond finishing, the non-acid etching group had highest shear bond strength with 7.29kg/$cm^2$ and after sandblasting, the acidetching group had lowest shear bond strength with 4.49kg/$cm^2$. 2. In both diamond finishing and sandblasting group, acid etching of the roughened amalgam surface decreased the shear bond strength. 3. The group treated with a diamond wheel had higher shear bond strength those treated with an sandblaster but there was not significanat.

• 대한치과보철학회지
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• 제29권2호
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• pp.117-127
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• 1991

The purpose of this study was to evaluate the effect of surface treatment of fractured metal-ceramic crown on bond strength of porcelain repair resin. The specimens were divided into two groups for metal specimens add five groups for porcelain specimens by surface treatment methods. the metal specimens were treated by 2 methods. : micro-sandblasting with $50{\mu}m$ aluminum oxide and grinding with diamond bur. The porcelain specimens were treated by 5 methods : micro-sandblasting with $50{\mu}m$ aluminum oxide, grinding with diamond bur, etching with porcelain etching agent, combination of micro-sandblasting and etching procedure, and combination of grinding and etching procedure. After surface treatment, each specimen was bonded with composite resin and the bond strength was measured and the surface texture was observed by scanning electromicroscope(SEM). The results were as follows : 1. There was significant difference in shear bond strength between metal specimen and prorcelain specimen. 2. Bood strength of metal specimens treated with diamond bur was higher than that treated with $50{\mu}m$ aluminum oxide sandblasting. 3. Bond strength of porcelain specimen treated with diamond bur was higher than that treated with $50{\mu}m$ aluminum oxide sandblasting and porcelain etching agent. 4. There was no significant difference in shear bond strength between the group treated with diamond bur and combined treatment groups respectively. 5. The large undercuts were observed in group treated with diamond bur by SEM.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2005년도 춘계학술대회 논문집
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• pp.395-400
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• 2005

Nano-scale fabrication of silicon substrate based on the use of atomic force microscopy (AFM) was demonstrated. A specially designed cantilever with diamond tip, allowing the formation of damaged layer on silicon substrate by a simple scratching process, has been applied instead of conventional silicon cantilever for scanning. A thin damaged layer forms in the substrate at the diamond tip-sample junction along scanning path of the tip. The damaged layer withstands against wet chemical etching in aqueous KOH solution. Diamond tip acts as a patterning tool like mask film for lithography process. Hence these sequential processes, called tribo-nanolithography, TNL, can fabricate 2D or 3D micro structures in nanometer range. This study demonstrates the novel fabrication processes of the micro cantilever and diamond tip as a tool for TNL using micro-patterning, wet chemical etching and CVD. The developed TNL tools show outstanding machinability against single crystal silicon wafer. Hence, they are expected to have a possibility for industrial applications as a micro-to-nano machining tool.

• 한국정밀공학회지
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• 제23권8호
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• pp.39-46
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• 2006

Nano-scale fabrication of silicon substrate based on the use of atomic force microscopy (AFM) was demonstrated. A specially designed cantilever with diamond tip, allowing the formation of damaged layer on silicon substrate by a simple scratching process, has been applied instead of conventional silicon cantilever for scanning. A thin mask layer forms in the substrate at the diamond tip-sample junction along scanning path of the tip. The mask layer withstands against wet chemical etching in aqueous KOH solution. Diamond tip acts as a patterning tool like mask film for lithography process. Hence these sequential processes, called tribo-nanolithography, TNL, can fabricate 2D or 3D micro structures in nanometer range. This study demonstrates the novel fabrication processes of the micro cantilever and diamond tip as a tool for TNL using micro-patterning, wet chemical etching and CVD. The developed TNL tools show outstanding machinability against single crystal silicon wafer. Hence, they are expected to have a possibility for industrial applications as a micro-to-nano machining tool.

• 한국표면공학회지
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• 제53권5호
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• pp.241-248
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• 2020

The change of the deposition behavior of diamond through a pretreatment process of the base metal prior to diamond deposition using HFCVD was investigated. To improve the specific surface area of the base material, sanding was performed using sandblasting first, and chemical etching treatment was performed to further improve the uniform specific surface area. Chemical etching was performed by immersing the base material in HCl solutions with various etching time. Thereafter, seeding was performed by immersing the sanded and etched base material in a diamond seeding solution. Diamond deposition according to all pretreatment conditions was performed under the same conditions. Methane was used as the carbon source and hydrogen was used as the reaction gas. The most optimal conditions were found by analyzing the improvement of the specific surface area and uniformity, and the optimal diamond seeding solution concentration and immersion time were also obtained for the diamond particle seeding method. As a result, the sandblasted base material was immersed in 20% HCl for 60 minutes at 100 ℃ and chemically etched, and then immersed in a diamond seeding solution of 5 g/L and seeded using ultrasonic waves for 30 minutes. It was possible to obtain optimized economical diamond film growth rates.