• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.411-411
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• 2012

Over the recent years, surface enhanced Raman spectroscopy (SERS) has dramatically grown as a label-free detecting technique with the high level of selectivity and sensitivity. Conventional SERS-active nanostructured layers have been deposited or patterned on rigid substrates such as silicon wafers and glass slides. Such devices fabricated on a flexible platform may offer additional functionalities and potential applications. For example, flexible SERS-active substrates can be integrated into microfluidic diagnostic devices with round-shaped micro-channel, which has large surface area compared to the area of flat SERS-active substrates so that we may anticipate high sensitivity in a conformable device form. We demonstrate fabrication of flexible SERS-active nanostructured substrates based on soft-lithography for simple, low-cost processing. The SERS-active nanostructured substrates are fabricated using conventional Si fabrication process and inkjet printing methods. A Si mold is patterned by photolithography with an average height of 700 nm and an average pitch of 200 nm. Polydimethylsiloxane (PDMS), a mixture of Sylgard 184 elastomer and curing agnet (wt/wt = 10:1), is poured onto the mold that is coated with trichlorosilane for separating the PDMS easily from the mold. Then, the nano-pattern is transferred to the thin PDMS substrates. The soft lithographic methods enable the SERS-active nanostructured substrates to be repeatedly replicated. Silver layer is physically deposited on the PDMS. Then, gold nanoparticle (AuNP) inks are applied on the nanostructured PDMS using inkjet printer (Dimatix DMP 2831) to deposit AuNPs on the substrates. The characteristics of SERS-active substrates are measured; topology is provided by atomic force microscope (AFM, Park Systems XE-100) and Raman spectra are collected by Raman spectroscopy (Horiba LabRAM ARAMIS Spectrometer). We anticipate that the results may open up various possibilities of applying flexible platform to highly sensitive Raman detection.

• 한국산학기술학회논문지
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• 제14권7호
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• pp.3238-3246
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• 2013

정보기술 발달은 다양한 기기에서 인터넷 망을 통한 음성통화를 가능하게 하고 있다. 스마트 폰에서는 무료로 제공되는 모바일 VoIP 앱을 설치하고 이용하는 사용자가 늘고 있다. 본 연구에서는 모바일 기기에서 확산되고 있는 무료통화 앱의 수용에 영향을 주는 요인을 밝히고 이들 요인간의 구조적인 관계를 파악하고자 한다. 이를 위해 관련 모바일 VoIP 관련 연구들을 살펴본 후 영향 요인들을 도출하고 이들 간의 구조적인 영향에 대한 연구모형을 설정하였다. 연구모형의 검증을 위해 설문조사와 통계적인 분석을 통한 실증분석을 실시하였다. 탐색적 요인분석을 통해 설문에 사용된 변수 사이의 요인을 찾아내었고 요인들 간의 구조적인 영향 관계를 규명하기 위해 구조방정식모형을 이용한 분석을 실시하였다. 실증분석 결과 모바일 VoIP가 제공하는 유용한 혜택과 사회적인 영향이 이용의도와 실제 이용에 많은 영향을 미치는 것으로 나타났으며, 이는 사용자를 대상으로 유용성을 강조하고 사회적인 영향을 강화할 수 있는 기능이 필요함을 시사하고 있다.

• 한국전기전자재료학회논문지
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• 제24권12호
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• pp.949-954
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• 2011

In this study, the characteristics and error ranges of the mechanical bonding strength were analyzed according to before and after thermal shock test for various chips of automotive application component using Sn-3.0Ag-0.5Cu solder. In the after thermal shock test, the mechanical bonding strengths tend to decrease, meanwhile decreasing rates of mechanical strengths were less then 12% at specimen's bonding area below 3.5$mm^2$, and were from 17 to 21% at specimen's bonding area above 12 $mm^2$. On the other hand, Specimen's mean deviation rates were about 5% at specimen's bonding area more than 12 $mm^2$. Inversely, at specimen's bonding area is less then 3.5 $mm^2$, mean deviation rates were increased to about 8%. It means that the smaller device size is, the larger mean deviation rate. In addition, error ranges and deviation rates of the mechanical bonding strengths may differ slightly depending on their bonding area. Furthermore, process conditions as well as method of mechanical reliability evaluation should be established to reduce the error ranges of bonding strength.

• 국제물리치료학회지
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• 제1권1호
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• pp.10-18
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• 2010

This study was performed to investigate the effects of Needle Electrode Electrical Stimulation(NEES) on ischemia-induced cerebrovascular accidents. After obstruction and reperfusion of arteries in white mice, the amounts of necrosis and inflammation related substances Bax, IL-6, Caspase-3, and COX-2 were measured in neurons of the fore-brain. The following results were obtained. This study used 21 male specific pathogen free(SPF) SD rats, 8 weeks of age and approximately 300g in weight. Each exposed artery was completely occluded with non-absorbent suture thread and kept in that state for 5 minutes. The sutures were then removed to allow reperfusion of blood. Test group is control group(common carotid artery occlusion models), a GI(underwent common carotid artery occlusion), and NEES(underwent NEES after artery occlusion). The GI and NEES groups were given 12, 24, or 48 hours of reperfusion before NEES. NEES device(PG6, ITO, Japan, 9V, current, 2Hz) was used to stimulate the bilateral acupoint ST36 of the SD rats for 30 minutes while they were sedated with 3% isoflurane. An immuno-histochemistry test was done on the forebrains of the GI induced rats. Both Bax and Caspase-3 immuno-reactive cells, related to apoptosis, were greater in the GI than the NEES group. Cox-2 and IL-6 immuno-reactive cells, related to inflammation, were greater in the GI and NEES groups than the control group. We can expect that applying NEES after ischemic CVA is effective for preventing brain cells from being destroyed. And we can conclude NEES should be applyed on early stage of ischemic CVA.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.278-278
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• 2016

Solution-processed metal-oxide semiconductors have been considered as the next generation semiconducting materials for transparent and flexible electronics due to their high electrical performance. Moreover, since the oxide semiconductors show high sensitivity to light illumination and possess persistent photoconductivity (PPC), these properties can be utilized in realizing optical memory devices, which can transport information much faster than the electrons. In previous works, metal-oxide semiconductors are utilized as a memory device by using the light (i.e. illumination does the "writing", no-gate bias recovery the "reading" operations) [1]. The key issues for realizing the optical memory devices is to have high photoconductivity and a long life time of free electrons in the oxide semiconductors. However, mono-layered indium-zinc-oxide (IZO) and mono-layered indium-gallium-zinc-oxide (IGZO) have limited photoconductivity and relaxation time of 570 nA, 122 sec, 190 nA and 53 sec, respectively. Here, we boosted up the photoconductivity and relaxation time using a double-layered IZO/IGZO active layer structure. Solution-processed IZO (top) and IGZO (bottom) layers are prepared on a Si/SiO2 wafer and we utilized the conventional thermal annealing method. To investigate the photoconductivity and relaxation time, we exposed 9 mW/cm2 intensity light for 30 sec and the decaying behaviors were evaluated. It was found that the double-layered IZO/IGZO showed high photoconductivity and relaxation time of 28 uA and 1048 sec.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.294.1-294.1
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• 2016

Transition metal dichalcogenides (TMDs) with two-dimensional layered structure, such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), are considered attractive materials for future semiconductor devices due to its relatively superior electrical, optical, and mechanical properties. Their excellent scalability down to a monolayer based on the van der Waals layered structure without surface dangling bonds makes semiconductor devices based on TMD free from short channel effect. In comparison to the widely studied transistor based on MoS2, researchs focusing on WSe2 transistor are still limited. WSe2 is more resistant to oxidation in humid ambient condition and relatively air-stable than sulphides such as MoS2. These properties of WSe2 provide potential to fabricate high-performance filed-effect transistor if outstanding electronic characteristics can be achieved by suitable metal contacts and doping phenomenon. Here, we demonstrate the effect of two different metal contacts (titanium and platinum) in field-effect transistor based on WSe2, which regulate electronic characteristics of device by controlling the effective barreier height of the metal-semiconductor junction. Electronic properties of WSe2 transistor were systematically investigated through monitoring of threshold voltage shift, carrier concentration difference, on-current ratio, and field-effect mobility ratio with two different metal contacts. Additionally, performance of transistor based on WSe2 is further enhanced through reliable and controllable n-type doping method of WSe2 by triphenylphosphine (PPh3), which activates the doping phenomenon by thermal annealing process and adjust the doping level by controlling the doping concentration of PPh3. The doping level is controlled in the non-degenerate regime, where performance parameters of PPh3 doped WSe2 transistor can be optimized.

• 한국인터넷방송통신학회논문지
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• 제16권6호
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• pp.159-164
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• 2016

본 논문에서는 기존의 IEEE 802.15.4 MAC 계층 표준으로 사용되는 슈퍼프레임 구조에서 1:N 상황의 네트워크를 대상으로 배터리 효율과 통신 성능이 개선된 슈퍼프레임 구조를 제안한다. 제안하는 슈퍼프레임은 2가지 구조를 변형 및 추가한다. 첫 번째, 비컨 도착 후에 제안하는 스케줄링 구간을 추가한다. 두 번째, 한 개의 경쟁 접근 구간을 2개로 분할한 구조로 변경한다. 엔드 디바이스의 LQI의 값에 따라 활성화 구간의 경쟁 접근 구간과 비경쟁 접근 구간으로 나누게 된다. 본 논문에서 기존의 CSMA/CA와 GTS할당에서의 배터리 소모와 비효율적인 프레임 전송 그리고 우선순위 고려에 대해 보완한다. $C{^+^+}$로 작성된 시스템 레벨 시뮬레이션을 통해, 그 결과 배터리 소모와 전송 성능이 향상되었음을 보여준다.

• 대한치과보철학회지
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• 제39권2호
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• pp.208-219
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• 2001

To study the effect of dentin permeability on a tooth with wear from tooth brushing after application of desensitizing agent, extracted teeth free from caries were chosen. Coronal dentin discs with thickness of 1mm were prepared. Using the split chamber device developed by Pashely, hydraulic conductance, scanning electron microscope images(SEM) and atomic force microscope images(AFM) were compared and contrasted before and immediately after the application of desensitizing agent and after equivalent tooth brushing of 1 week, 2 weeks, and 6 weeks. Four commercially available desensitizing agents were used in this study ; they were Gluma, Seal & Protect, All-Bond 2 and MS Coat. The results of this study are as follows. 1. On all specimens, the hydraulic conductance decreased after the application of tooth desensitizing agent. 2. Except the specimens treated with MS Coat, the remaining specimens had an increase in dentin permeability after tooth brushing for 1 and 2 weeks but a decrease after 6 weeks. 3. The specimens treated with MS Coat had statistically significant increase in the dentin permeability regardless with the duration of tooth brushing. 4. On examination of SEM and AFM, the dentinal tubule diameter had decreased after treatment of desensitizing agents. The specimens other than those treated with MS Coat, smear layers were noted after tooth brushing. It is not always consistant but the hydraulic conductance correlated with the images from SEM and AFM.

• Journal of Multimedia Information System
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• 제7권2호
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• pp.189-196
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• 2020

We have developed a device for recording biological data by inserting three electrodes and a needle with an angular velocity sensor into the moth for the purpose of measuring the electromyogram of the flapping and the corresponding lift force. With this measurement, it is possible to evaluate the moth-physiological function of moths, and the amount of pesticides that insects are exposed to (currently LD50-based standards), especially the amount of chronic low-concentration exposure, can be reduced the dose. We measured and recorded 2-channel electromyography (EMG) and angular velocity corresponding to pitch angle (pitch-like angle) associated with wing flapping for 100 sweet potato hawkmoths (50 females and 50 males) with the animals suspended and constrained in air. Overall, the angular velocity and amplitude of EMG signals demonstrated high correlation, with a correlation coefficient of R = 0.792. In contrast, the results of analysis performed on the peak-to-peak (PP) EMG intervals, which correspond to the RR intervals of ECG signals, indicated a correlation between ΔF fluctuation and angular velocity of R = 0.379. Thus, the accuracy of the regression curve was relatively poor. Using a DC amplification circuit without capacitive coupling as the EMG amplification circuit, we confirmed that the baseline changes at the gear change point of wing flapping. The following formula gives the lift provided by the wing: angular velocity × thoracic weight - air resistance - (eddy resistance due to turbulence). In future studies, we plan to attach a micro radio transmitter to the moths to gather data on potential energy, kinetic energy, and displacement during free flight for analysis. Such physiological functional evaluations of moths may alleviate damage to insect health due to repeated exposure to multiple agrochemicals and may lead to significant changes in the toxicity standards, which are currently based on LD50 values.