• Journal of Navigation and Port Research
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• v.32 no.9
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• pp.705-709
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• 2008

In the sea various methods have been conducted to capture wave energy which include the use of pendulums, pneumatic devices, etc. Floating devices, such as a cavity resonance device take advantages of both the water motion and the wave induced motions of the floating body itself. The wave energy converter is known commercially as the WAGB(Wave Activated Generator Buoy) and is used in some commercially available buoys to power navigation aids such as lights and horns. This wave energy converter consists of a circular flotation body which contains a vertical water column that has free communication with the sea. A theoretical analysis of this power generated by a pneumatic type wave energy converter is performed and the results obtained from the analysis are used for a real wave energy converter buoy. This paper is shown to have an optimum value for which maximum power is obtained at a given resonant wave period Also, the length of the internal water column corresponds to that of the water mass in the water column. If designed properly, wave energy converter can take advantage not only of the cavity resonance, but also qf the heaving motion of the buoy. Finally, simulation is performed with a LabVIEW program and the simulation results are applied to a wave energy simulator for modifying design data for a wave energy converter.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.276-283
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• 2005

Magnetic tunneling transistor (MTT) device using the amorphous n-type Si semiconductor film for base and collector consisting of the [CoFe/NiFe](free layer) and Si(top layer) multilayers was used to study the spin-dependent hot electron magnetocurrent (MC) and tunneling magnetoresistance (TMR) at room temperature. A large MC of 40.2 % was observed at the emitter-base bias voltage ( $V_{EB}$ ) of 0.62 V. The increasing emitter hot current and transfer ratio ( $I_{C}$/ $I_{E}$) as $V_{EB}$ are mainly due to a rapid increase of the number of conduction band states in the Si collector. However, above the $V_{EB}$ of 0.62 V, the rapid decrease of MC was observed in amorphous Si-based MTT because of hot electron spin-dependent elastic scattering across CoFe/Si interfaces.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.34-37
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• 2001

As the integrated circuit device shrinks to smaller dimensions, chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the inter-metal dielectrics (IMD) layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. To prevent agglomerated slurry particle from inflow, we installed 0.5${\mu}m$ POU (point of use) filter, which is depth-type filter and has 80% filtering efficiency for the $1.0{\mu}m$ size particle. In this paper, we studied the relationship between defect generation and pad count to understand the exact efficiency of the slurry filtration, and to find out the appropriate pad usage. Our preliminary results showed that it is impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize the flow rate of slurry to overcome depth type filters weak-point, and to install the high spray of de-ionized Water (DIW) with high pressure.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.20.2-20.2
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• 2011

III-nitrides have attracted much attention for optoelectronic device applications whose emission wavelengths ranging from green to ultraviolet due to their wide band gap. However, due to the strong polarization properties of conventional c-plane III-nitrides, the built-in polarization-induced electric field limits the performance of optical devices. Therefore, there has been a renewed interest in the growth of nonpolar III-nitride semiconductors for polarization free heterostructure optoelectronic and electronic devices. However, the crystal and the optical quality of nonpolar/semipolar GaN have been poorer than those of conventional c-plane GaN, resulting in the relative poor optical and electrical properties of light emitting diodes (LEDs). In this presentation, I will discuss the growth and characterization of high quality nonpolar a-plane and semipolar (11-22) GaN and InGaN multiple quantum wells (MQWs) grown on r- and m-plane sapphire substrates, respectively, by using metalorganic chemical vapor deposition (MOCVD) without a low temperature GaN buffer layer. Especially, the epitaxial lateral overgrowth (ELO) technique will be also discussed to reduce the dislocation density and enhance the performance of nonpolar and semipolar GaN-based LEDs.

• Korean Journal of Crystallography
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• v.2 no.2
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• pp.32-40
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• 1991

The effects of compositional variation, rotation speel and pulling rate on the growth of optical quality Bi120e02(1 crystals were examined. It was found to flatten the shape of crystal-melt interface for yowing a single crystals less than about 30mm in diameter at the rotation speed of 50rpm. Diameter of crystals with flat interface was increased as the pulling rate. The precipitation of Bi40e3012 phase set limits to pulling rate of BGO crystals. Precipitate-free BGO crystals were grown under pulling rate of 2mm l hr which released the stress resulted from too hi어 Pulling rate, and from 6. IBi203·GeO2 batch composition obtained by addition of 0.1 mole Bi203 into Bi-deficient melts to fill up the deficiency resulted from gradual volatilization of Bi2O). The pale-yellow colored crystals had good quality in that dislocation density was less than 103pits/cm, and it also exhibited transmittance of 70% and optical activity of 23°/mm. and SAW velosity was measured 1700m/sec on 111 cut 110 propagating BGO crystals. The SAW filter with electrode thickness of 9.8um was fabricated by using the electron beam and dry etching technique, it makes Bi12GeO20 devices intersting for color TV IF with half device size.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1386-1389
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• 2008

Conventional viewing angle switching electrode requires pixel division and additional liquid crystal panel. Hence the conventional viewing angle switching has low aperture ratio and high thickness. In this paper we proposed new viewing angle switching using hybrid aligned nematic mode by fringe-field electrode field (named HAN-FFS) with single liquid crystal panel. The fringe-field switching electrode is located at the bottom, and the additional common electrode is located at the top of the cell to control viewing angle. The proposed device is free from additional liquid crystal panel and pixel division. Consequently, the suggested structure has not only high aperture ratio but also show an excellent potential for viewing angle switching.

• Ceramist
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• v.23 no.1
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• pp.54-88
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• 2020

Global effort has resulted in tremendous progress with energy harvesters that extract mechanical energy from ambient sources, convert it to electrical energy, and use it for systems such as wrist watches, mobile electronic devices, wireless sensor nodes, health monitoring, and biosensors. However, harvesting a single energy source only still pauses a great challenge in driving sustainable and maintenance-free monitoring and sensing devices. Over the last few years, research on high-performance mechanical energy harvesters at the micro and nanoscale has been directed toward the development of hybrid devices that either aim to harvest mechanical energy in addition to other types of energies simultaneously or to exploit multiple mechanisms to more effectively harvest mechanical energy. Herein, we appraise the rational designs for multiple energy harvesting, specifically state-of-the-art hybrid mechanical energy harvesters that employ multiple piezoelectric and triboelectric mechanisms to efficiently harvest mechanical energy. We identify the critical material parameters and device design criteria that lead to high-performance hybrid mechanical energy harvesters. Finally, we address the future perspectives and remaining challenges in the field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.731-734
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. Polishing pads play a key role in CMP, which has been recognized as a critical step to improve the topography of wafers for semiconductor fabrication. It is investigated the performance of $SiO_2-CMP$ process using commercial silica slurry as a pad conditioning temperature increased after CMP process. This study also showed the change of SEM images in the pore geometry on the CMP pad surface after use with a different pad conditioning temperature.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.55 no.6
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• pp.227-235
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• 2006

In this paper, autonomous separation methodology of faulted section based on network is proposed newly, which can minimize the outage effect as compared with the existing center-based faulted section separation method by determining and separating autonomously the faulted section by the free operation information exchange among IEDs on the feeder of distribution system. The all IEDs is designed in network in which client/server function is possible in order to separate autonomously the faulted section using PtP(Peer to Peer) communication. Also, Inference based solution of IED for the autonomous faulted section separation is designed by rules obtained from the analyzing results of distribution system topology. Here, the switch IEDs transmit on network the fault information utilizing on multi-casting communication method, at the fame time, determine selfly whether they operates or not by inferencing autonomously the faulted section using the inference-based solution after receiving the transmitted information. Finally, in order to verify the effectiveness and application possibility of the proposed methodology, the diversity fault cases are simulated for the typical distribution system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.349-352
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• 2010

Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. We have studied the effect of oxygen partial pressure on the threshold voltage($V_{th}$) of a-IGZO TFTs. Interestingly, the $V_{th}$ value of the oxide TFTs are slightly shifted in the positive direction due to increasing $O_2$ partial pressure from 0.007 to 0.009 mTorr. The device performance is significantly affected by varying $O_2$ ratio, which is closely related with oxygen vacancies provide the needed free carriers for electrical conduction.