• JSTS:Journal of Semiconductor Technology and Science
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• 제2권3호
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• pp.213-225
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• 2002

Metal-Ferroelectric- Insulator- Silicon (MFIS) structured field effect transistor (FET) device was fabricated and characterized. Important issues to realize ferroelectric gate field effect transistor device were summarized in three sections. The choice of interlayer dielectric was made in the consideration of device functionality and chemical reaction between ferroelectric materials and silicon surface during fabrication process. Also, various ferroelectric thin film materials were taken into account to meet desired memory window and process compatibility. Finally, MFIS structured FET device was fabricated and important characteristics were discussed. For feasible integration of current device as random access memory array cell address schemes were also suggested.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.30.2-30.2
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• 2010

Nano-scale p-n junction can generate various nano-scale functional devices such as nanowire light emitting diode, nanowire solar cell, and nanowire sensor. The core shell type nanowire p-n junction has been considered for the high efficient devices in many previous reports. On the other hand, although device efficiency is relatively lower, the cross bar type p-n junction has simple topological structure, suggested by C.M. Lieber group, to integrate easily many p-n junction devices in one board. In this study, for the integration of the cross bar nanowire p-n junction device, a simple fabrication route, employed dielectrophoretic array and direct printing techniques, was demonstrated by the successful fabrication and programmable integration of the nanowire cross bar p-n junction solar cell. This direct printing process will give the single nanowire solar cell the opportunity of the integration on the circuit board with other nanowire functional devices.

• 디지털산업정보학회논문지
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• 제15권3호
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• pp.29-36
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• 2019

With the rapid development of 5G technology, more and more network functions are interconnected and more popular. In order to effectively manage emerging network concepts, it allows any device object in the real world to be connected anywhere and at any time through the integration of device object recognition, interaction and raw data collection technologies. In addition, IP Multimedia Subsystem (IMS) is an architecture framework for transmitting IP-based information to the device object which can be represented as end user. Therefore, the Internet of Things and IP Multimedia Subsystem (IoT-IMS) communication platform can provide a convenient and fast way for user or device objects to deploy new application services effectively. In particular, in order to collect and manage the device information from IoT effectively in the IoT-IMS communication platform, an IoT Information Gateway (IIG) is proposed. Through the IoT Application Service (AS) scenario, the collected device information can be easily observed and managed in a unified way.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2000년도 추계종합학술대회
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• pp.490-493
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• 2000

소자의 고집적을 위한 특성분석 기술은 빠른 변화를 보이고 있다. 이에 따라 고집적 소자의 특성을 시뮬레이션을 통하여 이해하고 이에 맞게 제작하는 기술은 매우 중요한 과제 중의 하나가 되었다. 소자가 마이크론급 이하로 작아지면서 그에 맞는 소자개발을 위해 여러 가지 구조가 제시되고 있는데 본 논문에서는 TCAD를 이용하여 여러 가지 구조 중on서 고농도로 도핑된 ground plane 위에 적층하여 만든 EPI MOSFET를 조사하였다. 이 구조의 특성과 임펙트 이온화와 전계 그리고 I-V특성 곡선을 저 농도로 도핑된 Drain(LDD) MOSFET와 비교 분석하였다. 또한 TCAD의 유용성을 조사하여 시뮬레이터로서 적합함을 제시하였다.

• 대한디지털의료영상학회논문지
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• 제10권2호
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• pp.33-37
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• 2008

To keep the online medical records available to anyone without constraint of time and space, introducing EMR (Electronic medical record), which is a clinical support management system. The purpose of this study is to develop interface standard of clinical test device. Integration and sharing of medical information is faced with enormous obstacles because medical organizations and associated companies are separately developing the interface. I hope that multi-function management system with workstation concept is operated to efficiently transmit clinical device result data based on this study. Transfer of precise medical result data available for decision making will improve quality of health care service.

• 센서학회지
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• 제18권2호
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• pp.154-159
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• 2009

This paper describes two methods - stamp-to-stick bonding and microtransfer molding - to integrate microfluidic channel into an optoelectrofluidic device for in-channel microparticle manipulation. We have demonstrated the optoelectronic microparticle manipulation in the channel-integrated optoelectrofluidic device using a liquid crystal display. As injecting a liquid sample containing $15{\mu}m$-diameter polystyrene particles into the fabricated channel, trapping and transport of individual microparticles have been successfully demonstrated. This channel-integrated optoelectrofluidic device may be useful for several in-channel applications based on the optoelectrofluidics such as optoelectronic flow control, droplet-based protein assay and bead-based immunoassay.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 추계학술대회 논문집 전기물성,응용부문
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• pp.92-94
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• 2003

Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials, the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultra small size. In this paper, detected displacement current using PBLG and PBDG, deposition and observed the electrical characteristics to each 1, 3, 5, 7, 9 layers by LB method. Maximum value of change ratio of displacement current by the detected speed and temperature appeared almost lineally, could confirm that it are in comparison relation each other speed-temperature and displacement current. The structure of manufactured device is MIM. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

• 한국생산제조학회지
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• 제22권3_1spc호
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• pp.531-536
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• 2013

An automatic wax-ring manufacturing system for silk coating was developed, which consisted of a container, pallet with a cooling part, injection port, and removing device. The removing device is a system to load, lift, and cut the wax-ring, which is widelyused for various silk-coating industrial purposes. A novel removing device equipped with a water cooling circulation system is proposed in this paper. It has the benefit of easy control, as well as the convenience of loading and unloading without the use of other equipment. Three-dimensional modeling techniques were adopted to develop integrated functions for the automatic wax-ring manufacturing system, which made it possible to confirm the smooth integration/interface of each part and the system's interrelations with other manufacturing systems.

• 전자통신동향분석
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• 제32권6호
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• pp.8-16
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• 2017

In this paper, we review studies attempting to triumph over the limitation of Si-based semiconductor technologies through a heterogeneous integration of high mobility compound semiconductors on a Si substrate, and the co-integration of electronic and/or optical devices. Many studies have been conducted on the heterogeneous integration of various materials to overcome the Si semiconductor performance and obtain multi-purpose functional devices. On the other hand, many research groups have invented device fusion technologies of electrical and optical devices on a Si substrate. They have co-integrated Si-based CMOS and InGaAs-based optical devices, and Ge-based electrical and optical devices. In addition, chip and wafer bonding techniques through TSV and TOV have been introduced for the co-integration of electrical and optical devices. Such intensive studies will continue to overcome the device-scaling limitation and short-channel effects of a MOS transistor that Si devices have faced using a heterogeneous integration of Si and a high mobility compound semiconductor on the same chip and/or wafer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.428-431
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• 2002

Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultrasmall size. The structure of MIM(Metal-Insulator-Metal) device is Cr-Au/ PBLG/ Al. the number of accumulated layers are 1, 3, 5, 7, 9. The I-V characteristic of the device is measured from 0[V] to 2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because PBLG system have a accumulated layers the maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.