• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.532-534
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• 2009

The ceramics superconductor may have a high degree of homogeneity and a more open structure through which atoms can easily diffuse without having to overcome the high activation barrier. Infrared detectors of ceramic superconductor materials have been studied. Ceramic superconductor have smaller reflection coefficient than metal superconductor and therefore infrared light can more easily penetrate into bulks. YBCO thick films show sensitivity of 250 V/W. The accumulation of particles decrease the superconducting energy gap.

• The Bulletin of The Korean Astronomical Society
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• v.39 no.1
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• pp.78.2-78.2
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• 2014

Many techniques for data analysis also based on gaussian noise assumption which is often valid in various situations. However, the sensitivity of gravitational wave searches are limited by their non-gaussian and non-stationary noise. We introduce various on-going efforts to overcome this limitation in Korean Gravitational Wave Group. First, artificial neural networks are applied to discriminate non-gaussian noise artefacts and gravitational-wave signals using auxiliary channels of a gravitational wave detector. Second, viability of applying Hilbert-Huang transform is investigated to deal with non-stationary data of gravitational wave detectors. We also report progress in acceleration of low-latency gravitational search using GPGPU.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.791-793
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• 1993

The hall sensor is current detector using hall effect in semiconductor and the conventional type detect current with concentrating flux by current of conductor. So, detection of small current is very difficult because of residual magnetism. This paper give the experiments based results about method that detect the small DC current using minimizing the residual of hall element by magnetic modulation and concentrating flux. The suggested sensor can dector small current better than the conventional that.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.776-779
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• 2004

A RF front-end module is designed for GIS(Gas Insulated Substation) which is employed for effective and efficient very high voltage transmission. Major advantage of the unit is improved PO detection sensitivity through minimizing the effect of surrounding interference signals, which is achieved by controlling the gain and the selection of the frequency band, for the precise detection of any UHF PO (Partial Discharge) disturbance occurred in the GIS due to some unwanted problems. For the development of the module, various switches for providing selected signal paths, wideband LNA, 3 BPF for selecting detection frequency band, and video detector are designed, fabricated and measured on 1 mm FR4 substrate with various RF components. The detection sensitivity of the unit was <-60 dBm that is sufficient to detect UHF PO signals as low as 1 pC. It is believed that the value is enough to detect the signal occurred in GIS.

• KSBB Journal
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• v.13 no.5
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• pp.477-482
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• 1998

A biosensor with PZT piezoelectric ceramic crystal was developed for the detection of formaldehyde gas. Poled PZT piezoelectric ceramic disk was made from ZrO2, TiO2 and Nb2O5, together with the addition of PbO and polyvinyl alcohol, through various processes of mixing, calcination drying, crushing, forming, sintering, polishing, ion coating and poling. Oscillator circuit of sensor was made of operational amplifier(AD811AN). Formaldehyde dehydrogenase was immobilized onto a piezoelectic ceramic crystal, together with the cofactors, reduced glutathione and nicotinamide adenine dinucleotide. The effect of flow rate on the sensitivity was determined by varing the flow rate of carrier gas from 24.7mL/min to 111.7mL/min through detector cell. The results indicated that as the flow rate was increased, the recovery rate was increased. And a significant increase in the sensitivity was observed in enhanced flow rate of carrier gas. Frequency difference(ΔF) of immobilized PZT piezoelectic disk increased proportionally to the concentration gas and reproduced to repeated exposures of formaldehyde gas(28ppm, Δ68Hz).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.282-283
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• 2006

The transport phenomena of arsenic (As) doped amorphous selenium(a-Se:As) thin film for digital X-ray conversion material has been reported. The effect of As addition on the carrier mobility and recombination lifetime in a-Se:As sample has been measured using the moving photo-carrier grating (MPG) technique. An Increase in hole mobility and recombination was observed when 0.3% arsenic, was added into a-Se sample, whereas electron mobility decrease with arsenic addition due to the defect density. The fabricated a-Se:03% As device exhibited the highest X-ray sensitivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.305-306
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• 2005

The effects of As addition In amorphous selenium (a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating (MPG) technique We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As X-ray device. The fabricated a-Se (0.3%As) based X-ray detector exhibited the highest X-ray sensitivity of 5 samples.

• Journal of Sensor Science and Technology
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• v.20 no.1
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• pp.53-57
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• 2011

We developed a small methane detection system because methane gas is used in many areas and is dangerous. The developed system consisted of LD(Laser Diode) tuned a wavelength of $1.65\;{\mu}m$, two mirrors to collect a laser beam, photo detector. It could detect methane gas at a long range and its sensitivity was 1.98 V/$CH_4%$.

• Journal of the Semiconductor & Display Technology
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• v.12 no.3
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• pp.35-39
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• 2013

In this paper, we developed an optical sheet for LED lighting with integrated $CO_2$ gas and temperature sensor which can monitor at the indoor environment. The optical sheet for LED lighting is fabricated through PMMA(Polymethyl methacrylate) injection process using mold. This research enables to fabricate the reflective sheet, light-guide plate and the prism sheet in a optical sheet. The fabricated sheet demonstrates higher intensity of optical efficiency compared with single-sided sheets. The $CO_2$ sensor was fabricated using NDIR(NON-Dispersive Infrared) method and it has $0.0235mV/V{\cdot}PPM$ sensitivity. The temperature sensor was fabricated using RTD(Resistance temperature detector) method and it has $0.563{\Omega}/^{\circ}C $sensitivity.

• Progress in Superconductivity
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• v.14 no.2
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• pp.99-101
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• 2012

Fluorescent yield X-ray absorption fine structure (XAFS) spectroscopy is useful for analyzing local structure of specific elements in matrices. We developed an XAFS apparatus with a 100-pixel superconducting tunnel junction (STJ) detector array with a high sensitivity and a high resolution for light-element dopants in wide-gap semiconductors. An STJ detector has a pixel size of $100{\mu}m$ square, and an asymmetric layer structure of Nb(300 nm)-Al(70 nm)/AlOx/Al(70 nm)-Nb(50 nm). The 100-pixel STJ array has an effective area of $1mm^2$. The XAFS apparatus with the STJ array detector was installed in BL-11A of High Energy Accelerator Research Organization, Photon Factory (KEK PF). Fluorescent X-ray spectrum for boron nitride showed that the average energy resolution of the 100-pixels is 12 eV in full width half maximum for the N-K line, and The C-K and N-K lines are separated without peak tail overlap. We analyzed the N dopant atoms implanted into 4H-SiC substrates at a dose of 300 ppm in a 200 nm-thick surface layer. From a comparison between measured X-ray Absorption Near Edge Structure (XANES) spectra and ab initio FEFF calculations, it has been revealed that the N atoms substitute for the C site of the SiC lattice.