• 대한간호학회지
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• 제24권3호
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• pp.389-412
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• 1994

This study was done to investigate stress and coping methods of mothers with brain disease children. The subjects for this study were obtained by taking a sample of mothers with brain disease children hospitalized in neurosurgery ward of K medical center in Seoul from Nov. 20, 1992 to Mar. 10, 1993. The collected date were analized by S.P.S.S. program(frequency, percentage, mean, t-test, ANOVA, Pearson Correlation). The results of the study were as follow. 1. The mean of the degree of mothers' stress was 3.681. Of the stress categories, illness treatment (4.216) was highest, and the next were in order of ill-ness status and prognosis(4.154) , family relation-ships and personal roles(3.202), interpersonal relationships(2.916). 2. The mean of the degree of mothers' coping method was 2.930. Of the coping method categories, communication with medical team or parents in similar situations(3.332) was highest, and the next were in or-der of family cooperation and optimistic thought about the situation(3.241), reforcement of self esteem and maintenance of psychological stability(2.538). 3. There was not seen a stastically significant correlation between stress factors and coping methods of mothers. But with categories, the higher the stress to illness status and prognosis was, the hight coping methods' degree of communication with medical team or parents in similar situations was shown a positive correlation, if not high (r=.2776, P=.046) . And the higher the stress to illness treatment was, the higher coping methods' degree of communication with medical team or parents in simial situations was shown a positive correlation, if not high (r=.2727, P=.049). 4. With the difference of stress according to mothers' general characteristics, religion and monthly income shew a statically significant difference. The mothers' group who have a religion shew the higher degree of stress(t=-3.17, P=.003), The group who get the most income shew highest degree of stress (F=.4693, P=.0156). With the difference of coping according to mothers' general characteristics, the most support-ing person, satisfaction with husbands and mothers' own health status shew a statistically significant difference. The group who get the most support from parents-in-law(F=3.7508, P=.013), the group who are much satisfied with husband(F=3.589, P=.016), and the group whose health status are good(F=3.3675, P=.046), shew the highest coping degree. 5. There were no significant difference in degree of stress and coping by children's characteristics The significance of the study will be concluded as follows. 1. Investigating the stress factors, which mothers are perceiving, it will be utilized as the basic materials of nursing plan so as to reduce the stress of mothers. 2. In searching for the ways of mothers' more helpful coping methods, it shows the necessity of the active nursing intervention for the mothers in the process of coping with their stress. That is, the nurse should serve the earnest nursing as counselor, supporter, educator, and information - provider. 3. Recogning mothers as well as children with brain disease as a client, the nurse will be able to help the mother, who is taking care of the children, cope with the stress situation well, and to make a contribution to the recovery, rehabilitation, and health of the children and to the enhancement of the family' health.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.213-213
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• 2013

Even weak van der Waals (vdW) adhesion between two-dimensional solids may perturbtheir various materials properties owing to their low dimensionality. Although the electronic structure of graphene has been predicted to be modified by the vdW interaction with other materials, its optical characterization has not been successful. In this report, we demonstrate that Raman spectroscopy can be utilized to detect a few % decrease in the Fermi velocity ($v_F$) of graphene caused by the vdW interaction with underlying hexagonal boron nitride (hBN). Our study also establishes Raman spectroscopic analysis which enables separation of the effects by the vdW interaction from those by mechanical strain or extra charge carriers. The analysis reveals that spectral features of graphene on hBN are mainly affected by change in vF and mechanical strain, but not by charge doping unlike graphene supported on $SiO_2$ substrates. Graphene on hBN was also found to be less susceptible to thermally induced hole doping.

• 대한화학회지
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• 제37권3호
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• pp.351-354
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• 1993

Z-1-에칠-2-니트로-1-부텐일-(4'-메칠)-페닐 슬폰, C$_{13}$H$_{17}$NO$_4$S의 분자량은 283.4으로 a = 12.194(7), b = 7.290(4), c = 16.532(14)${\AA}$, ${\beta}$ = 103.4(2)$^{\circ}$, V = 1429.5 ${\AA}^3$, Z = 4, D$_c$ = 1.32 gcm$^{-3}$, ${\lambda}$(Mo K${\alpha}$) = 0.71069 ${\AA}$, ${\mu}$ = 2.2 cm$^{-1}$, F(000) = 600, T = 298 K으로 단사정계에 계속하여 P2$_1$/c의 공간군을 갖으며 1762rodml I > 1.0${\sigma}$(I)인 회절반점에 대하여 R=0.050이었다. 분자는 메칠벤젠고리에 결합된 S 원자와 NO$_2$기에 결합된 "치환된 부텐골격", C-C(S)=C(NO$_2$)-C으로 이뤄진 cis-형의 분자구조를 갖고 있다. 메칠벤젠고리와 치환된 부텐부분은 거의 평면으로 되어 있으며 그들 자신의 분자평면으로 부터의 각각의 최대편차는 벤젠기의 C(1) 원자의 0.018${\AA}$와 NO$_2$기의 N 원자의 0.045${\AA}$이다. 부텐골격의 평면은 메칠벤젠의 평면과 88.5$^{\circ}$를 또 NO$_2$기와의 평면은 78.6$^{\circ}$를 이루고 있다. 부텐평면으로부터의 NO$_2$기의 회전은 NO$_2$기가 가지고 있는 공명구조의 기여도를 감소하여 SO$_2$기의 O(2) 원자와 NO$_2$기의 O(3) 원자 사이에서 일어나는 반발로 그 거리가 2.8${\AA}$의 예상된 van der vaals 거리보다 긴 2.894 ${\AA}$로 되어 있다.

• Bulletin of the Korean Chemical Society
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• 제18권1호
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• pp.14-18
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• 1997

Sulconazole nitrate, C18H16Cl3N3O3S, crystallizes in monoclinic, space group C2/c, with a=14.401(1), b=8.051(1), c=34.861(2) Å, β=95.9(1)°, g=0.58 mm-1, Dc=1.523 g/cm3, Dm=1.522 g/cm3, F(000)=1888.0, and z=8. Intensities for 2460 unique reflections were measured on a CAD4 diffractometer with graphited-monochromated Mo-Kα radiation. The structure was solved by direct method and refined by full matrix least squares to a final R=0.071 for 2182 reflections (Io > 2σIo). The bond lengths and angles are comparable with the values found in the analogues imidazole derivatives. The 2,4-dichlorophenyl ring(A) and the p-chlorophenyl ring(B) are almost planar with different heights [dihedral angle 17.3°] while the imidazole ring(C) is nearly perpendicular to the two phenyl rings[dihedral angles about the two rings A, B are 110.8° and 96.1° respectively]. In order to understand the overall conformation we calculated the selected distances (l1, l2, l3) among the center of the three rings and considered the imaginary plan D[C(7), C(9) and C(16)]. The two polar group S(8) and N(19) do not have gauche conformation and l2 value (4.47 Å) is shorter than the other imidazole derivatives. One -NO3 group are hydrogen bonded the two neighbored sulconazole molecules. The molecular crystal packing is also formed by two hydrogen bondings and van der Waals forces.

• 항공우주정책ㆍ법학회지
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• 제33권1호
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• pp.3-43
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• 2018

세계적으로 드론(드론)는 많은 분야에서 비약적인 발전과 그 활용도에 두각을 나타내고 있다. 더불어, 연일 미디어에서는 드론 관련 규제완화 및 드론 시범운행 그리고 드론 관련 사고소식이 이어지고 있다. 이제 드론은 군용무인기로의 사용을 넘어, 민간 시장으로 많은 기업이 진출하고 있으며, 각 국가기관에서는 드론활용에 대한 연구를 적극적 지속적으로 진행 중이다. 특히, 현재의 드론 산업은 일반인을 상대로 부상하고 있으며, 비약적인 발전가능성과 함께 드론은 그 잠재적 위험성을 내포한 채로 일상생활관계로 다가오고 있다. 특히 드론의 상업적 활용에 있어, 일명 드론택시(여객운송)와 드론택배배송(화물운송)의 경우 현행 항공관련 법규가 어떻게 적용될 수 있는지 살펴보았다. 1. "항공안전법"과 동법 시행규칙은 드론인 무인항공기와 무인비행장치의 정의에 있어 "사람이 탑승하지 아니하고" 원격조종 등의 방법으로 비행하는 것이라고 정의하고 있기 때문에 드론을 사용하는 운송사업은 동법을 적용할 수가 없다. 또한 무인항공기택시나 무인비행장치택배배송 모두 타인의 수요에 맞추어 유상으로 여객 혹은 화물을 운송하는 사업이지만 "항공사업법"을 적용하는데 한계가 있다. 그러므로 우선 드론 정의에 대한 개정이 선행되어야 하며, 드론을 이용한 운송사업에 관한 규정이 마련되어 안전성 인증에도 세심한 주의한 필요하다 할 것이다. 2. 다음으로 무인비행장치택배배송은 운송화물의 훼손 및 분실가능성뿐만 아니라 지상 제3자 손해의 위험까지 내포하고 있음에도 불구하고 "상법" 제896조에 따라 (무인비행장치)초경량비행장치의 적용 배제됨에 따라 그 적용에 한계가 있다. 이와 관련하여 "민법" 제750조 이하의 불법행위 책임의 적용을 고려할 수 있지만, 항공운송과 관련하여 그 특성상 "상법"에서 별도로 규정하고 있는 입법취지에 맞춰 무인항공시스템에 관한 사법적 책임 관계도 고려할 필요가 있다. 드론에 관한 운용에 관한 개별적인 규정을 완화하여 산업과 기술발전을 도모하여야 하겠지만, 사법적인 측면에서의 규정은 그 책임관계를 엄하게 강화하여 균형있는 발전을 이뤄야 함과 동시에 관련 법률을 현실에 부합하도록 법률개정에 관한 적극적인 논의가 신속하게 이루어져야 할 것이다.

• 한국공작기계학회논문집
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• 제14권2호
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• pp.33-41
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• 2005

ZnO epilayer was synthesized by the pulsed laser deposition(PLD) process on Al$_2$O$_3$ subsorte after irradiating the surface of ZnO sintered pellet by ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A1203) substrate at the 境mperature of 400$^{circ}$C. The crystalline structure of epilayer was investigated by the Photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measure with Hall effect by van der Pauw mothod are $8.27\times$1016cm$^{-3}$ and 299 cm$^{2}$/V$\cdot$s at 293 K respectively, The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, E$_g$(T)= 3.3973 eV - ($2.69\times$ 10$^{-4}$ eV/K)T$^{2}$/(T + 463K). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of V$_{Zn}$, V$_{O}$, Zn$_{int}$, and O$_{int}$ obtained by PL measurements were classified as a donor or acceptor type. In addition we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/Al$_2$O$_3$ did not firm the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2004년도 추계학술대회 논문집
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• pp.233-244
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• 2004

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.467-475
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• 2004

ZnO epilayer were synthesized by the pulsed laser deposition(PLD) process on $Al_2$ $O_3$substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A $l_2$ $O_3$) substrate at a temperature of 400 $^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are 8.27${\times}$$10^{16}$$cm^{-3}$ and 299 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}$(T)= 3.3973 eV - (2.69 ${\times}$ 10$_{-4}$ eV/K) $T^2$(T＋463k). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$ , $V_{o}$ , Z $n_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/A $l_2$ $O_3$did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.s.s.s.

• Safety and Health at Work
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• 제6권2호
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• pp.90-96
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• 2015

Background: The physical work demands of construction work can be reduced using ergonomic measures. The aim of this study was to evaluate the use of ergonomic measures related to musculoskeletal disorders (MSDs) among construction workers. Methods: A questionnaire was sent at baseline and 2 years later to 1,130 construction workers. We established (1) the proportion of workers reporting an increase in their use of ergonomic measures, (2) the proportion of workers reporting a decrease in MSDs, (3) the relative risk for an increase in the use of ergonomic measures and a decrease in MSDs, and (4) workers' knowledge and opinions about the use of ergonomic measures. Results: At follow-up, response rate was 63% (713/1,130). The proportion of workers using ergonomic measures for vertical transport increased (34%, 144/419, p < 0.01); for measures regarding horizontal transport and the positioning of materials, no change was reported. The proportion of workers reporting shoulder complaints decreased (28%, 176/638, p = 0.02). A relationship between the use of ergonomic measures and MSDs was not found; 83% (581/704) of the workers indicated having sufficient knowledge about ergonomic measures. Lightening the physical load was reported to be the main reason for using them. Conclusion: Only the use of ergonomic measures for vertical transport increased over a 2-year period. No relationship between the use of ergonomic measures and MSDs was found. Strategies aimed at improving the availability of ergonomic equipment complemented with individualized advice and training in using them might be the required next steps to increase the use of ergonomic measures.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.225-225
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• 2016

PHOLED devices which have the structure of ITO/HAT-CN(5nm)/NPB(50nm)/EML(47nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) are fabricated to investigate the diffusion length of the triplet exciton by using double-quantum-well(DQE) EML structure. To fabricate DQW structures, Ir(ppy)3(2% wt) and Ir(btp)2(8% wt) are used as green and red emission zones, respectively. In DQW structured EML, as shown in Fig. 1, 1nm thick layers of green and red emission zones are located middle of the EML, and the distance between these wells(x) is changed from 0nm to 10nm. As shown in Fig. 2, the emission spectra from DQW PHOLED devices are changed with different x. The intensity of the green emission(520nm) is decreased when x is decreased, and it goes to near zero when x=0nm. This behavior can be identified as the diffusion of the triplet excitons from Ir(ppy)3 to Ir(btp)2 by the Dexter energy transfer(DET). From the external quantum efficiency(EQE) of the red emission, as shown in Fig. 3, the diffusion length of the triplet excitons can be determined by the equation of DET rate, R=A Exp(-2RDA/L), where RDA is donor-acceptor distance and L is the sum of the van der Wals radii. As a result, the measured data of the red EQEs with different x are identified to theoretical result from the equation of DET rate(Fig. 4). From this results, we could confirm that the diffusion length of the triplet excitons can be determined by using DQW structure and this method is very useful to investigate the behavior of the excitons in PHOLEDs.