• 제목/요약/키워드: Deposition time

검색결과 1,575건 처리시간 0.031초

TiN피막의 경도 및 구조적 특성에 미치는 화학증착 조건의 영향 (Effects of Chemical Vapor Deposition Parameters on The Hardness and the Structural Characteristics of TiN Film)

  • 신종훈;이성래;백영현
    • 한국표면공학회지
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    • 제20권3호
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    • pp.106-117
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    • 1987
  • The microhardness and the structural characteristics of the chemically vapor deposited TiN film on the 430 stainless steel substrate have been investigated with various deposition parameters such as the deposition time, the total flow rate, the flow rate ratio $(H_2/N_2)$, and the deposition temperature. The most important factor to affect the microhardness of the TiN film in this study was the denseness of the structure in connection with the degree of the lattice strain. The relationship between the lattice parameter changes and the grain size variation under all deposition conditions generally followed the grain boundary relaxation model. The (111) preferred orientation prevailed in the early stage of the deposition conditions, however, the (200) preferred orientation was developed in the later stage. The surface morphology at optimum conditions displayed a dense diamond shaped structure and the microhardness of the films was high (1700-2400Hv) regardless of the type of the substrates used.

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PLD(Pulsed Laser Deposition)를 이용한 청색 박막 형광체의 제조 및 특성분석 (Preparation and Characterization of Blue Thin Film Phosphors by Pulsed Laser Deposition)

  • 조상호;정유선;곽종호;손기선
    • 한국세라믹학회지
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    • 제43권12호
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    • pp.852-858
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    • 2006
  • It is well known that $BaMgAl_{10}O_{17}:Eu^{2+}$ (BAM) and $CaMgSi_2O_6:Eu^{2+}$ (CMS) are a highly efficient blue phosphor. However, these phosphors in the form of thin films have not yet been realized clue to technical difficulties. We prepared thin film type BAM and CMS phosphors on quartz glass substrate using a pulsed laser deposition technique. The luminescent and structural properties of thin film phosphors were monitored as a function of key processing parameters such as oxygen partial pressure inside the deposition chamber, deposition time, laser energy density and the type of post-deposition treatments used. Even though we could not obtain single homogenous phases, thin films with large homogenous areas and a high photoluminescence could be produced by optimizing these processing parameters.

전기영동적층법을 통한 판상 알루미나 입자와 전기영동 수지의 배향 유무기 복합체 제조 및 물성평가 (Preparation and Characterization of a Layered Organic-inorganic Composite by the Electrophoretic Deposition of Plate-shaped Al2O3 Particles and Electrophoretic Resin)

  • 박희정;임형미;최성철;김영희
    • 한국세라믹학회지
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    • 제50권6호
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    • pp.460-465
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    • 2013
  • Plate-shaped inorganic particles are coated onto a stainless steel substrate by the electrophoretic deposition of a precursor slurry which includes the inorganic particles of $Al_2O_3$ and polymer resin in mixed solvents to mimic the abalone shell structure, which is a composite of plate-shaped inorganic particles and organic interlayer binding materials with a layered orientation. The process parameters of the electrophoretic deposition include the voltage, coating time, and conductivity of the substrate. In addition, the suspension parameters are the particle size, concentration, viscosity, conductivity, and stability. We prepared an organic-inorganic composite coating with a high inorganic solid content by arraying the plate-shaped $Al_2O_3$ particles and electrophoretic resin via an electrophoretic deposition method. We analyzed the effect of the slurry composition and the electrophoretic deposition process parameters on the physical, mechanical and thermal properties of the coating layer, i.e., the thickness, density, particle orientation, Young's modulus and thermogravimetric analysis results.

PECVD에 의한 질화 실리콘 박막의 증착 (Deposition of a-SiN:H by PECVD)

  • 허창우
    • 한국정보통신학회논문지
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    • 제11권11호
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    • pp.2095-2099
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    • 2007
  • 본 연구에서는 LCD, 이미지 센서 등의 개별 소자인 비정질 실리콘 박막 트랜지스터에서 게 이트 유전층 및 절연층으로 사용되는 비정질 질화 실리콘 박막을 사일랜($SiH_4$) 및 암모니아가스를 사용해서 PECVD(Plasma Enhanced Chemical Vapor Deposition) 진공 증착장비로 최적의 비정질질화실리콘 박막 증착 조건을 확립한다. 먼저 반응실의 진공도, rf 전력, $SiH_4$ 및 질소 그리고 암모니아가스의 flow rate를 변화시키면서 형성된 박막의 특성을 조사한다. 계속해서 다른 변수를 고정시킨 상태에서 rf 전력을 변화시키고 다음에는 반응실의 진공도 등을 변화시켜 최적의 증착조건을 확립한다. 이렇게 확립된 증착조건을 사용하여 비정질질화실리콘박막을 제작하여 특성을 측정한 결과 우수한 성능을 나타냈음을 확인하였다.

안면도 바람아래 할미섬 주변의 시계열적 침식·퇴적환경 변화 분석 (A Time-Series Analysis of the Erosion and Deposition around Halmi-island, Baramarae)

  • 유재진;김장수;장동호
    • 한국지형학회지
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    • 제23권1호
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    • pp.47-60
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    • 2016
  • In this study, datum points measurement have been collected and then weather data have been analyzed to figure out erosion and deposition environmental change around Halmi-island, Baramarae. First of all, it was difficult to analyze geomorphological change which is caused by climate change because of quite short term of collection period of data. However, differences in spatial distribution of erosion and deposition have locally been shown. In all season, the wind is blowing in north and north-west direction mostly except in summer which is shifted to south direction. However, since its ratio which are above 5m/s is much lower than the north and north-west wind, its effect on geomorphological process is very tiny. In order to look at a tendency of erosion and deposition environmental change around Baramarae Halmi-island, the periphery of Halmi-island was classified to east and west part, then accumulated erosion and deposition values have been calculated. As a result, generally, the datum points are located in the west part which are mostly depositional sites. On the other hand, the datum points are located in east part showed the dominant erosion patterns.

OLED의 Thin Film Encapsulation을 위한 MgO 박막의 원자층 증착 장치 및 공정에 관한 연구 (Study on the Atomic Layer Deposition System and Process of the MgO Thin Layer for the Thin Film Encapsulation of OLED)

  • 조의식;권상직
    • 반도체디스플레이기술학회지
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    • 제20권3호
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    • pp.22-26
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    • 2021
  • Thin-film encapsulation (TFE) technology is most effective in preventing water vapor and oxygen permeation in the organic light emitting diodes (OLED). Of those, a laminated structure of Al2O3 and MgO were applied to provide efficient barrier performance for increasing the stability of devices in air. Atomic layer deposition (ALD) method is known as the most promising technology for making the laminated Al2O3/MgO and is used to realize a thin film encapsulation technology in organic light-emitting diodes. Atomic layer deposited inorganic films have superior barrier performance and have advantages of excellent uniformity over large scales at relatively low deposition temperatures. In this study, the control system of the MgCP2 precursor for the atomic layer deposition of MgO was established in order to deposit the MgO layer stably by the injection time of second level and the stable heating temperature. The deposition rate was obtained stably to be from 4 to 10 Å/cycle using the injection pulse times ranging from 3 to 12 sec and a substrate temperature ranging from 80 to 150 ℃.

도핑 공정에서의 Pre-deposition 온도 최적화를 이용한 Solar Cell 효율 개선 (Solar Cell Efficiency Improvement using a Pre-deposition Temperature Optimization in The Solar Cell Doping Process)

  • 최성진;유진수;유권종;한규민;권준영;이희덕
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.244-244
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    • 2010
  • Doping process of crystalline silicon solar cell process is very important which is as influential on efficiency of solar. Doping process consists of pre -deposition and diffusion. Each of these processes is important in the process temperature and process time. Through these process conditions variable, p-n junction depth can be controled to low and high. In this paper, we studied a optimized doping pre-deposition temperature for high solar cell efficiency. Using a $200{\mu}m$ thickness multi-crystalline silicon wafer, fixed conditions are texture condition, sheet resistance($50\;{\Omega}/sq$), ARC thickness(80nm), metal formation condition and edge isolation condition. The three variable conditions of pre-deposition temperature are $790^{\circ}C$, $805^{\circ}C$ and $820^{\circ}C$. In the $790^{\circ}C$ pre-deposition temperature, we achieved a best solar cell efficiency of 16.2%. Through this experiment result, we find a high efficiency condition in a low pre-deposition temperature than the high pre-deposition temperature. We optimized a pre-deposition temperature for high solar cell efficiency.

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경질용 3가 크롬전착에 미치는 전해조건의 영향 (Effect of Electrolysis Conditions on Hard Chromium Deposition from Trivalent Chromium Bath)

  • 김대영;박상언;김만;권식철;최주원;최용
    • 한국표면공학회지
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    • 제36권2호
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    • pp.155-160
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    • 2003
  • The effect of the temperature, current density and deposit time on hard chromium deposition in trivalent chromium bath was investigated. Cathode current efficiency increased with increasing current density. Increasing bath temperature from $20^{\circ}C$ to $50^{\circ}C$, chromium deposits were produced in higher current density and the maximum current efficiency was increased. At the plating conditions of $40^{\circ}C$, $30A/dm\m^2$, the deposition thickness increased in proportion to increasing electrolysis time The rate is$ 90\mu\textrm{m}$/hrs. for 2 hours. Microhardness of chromium deposits increased with increasing bath temperature and decreasing current density, and it was constant with electrolysis time. All of bath conditions, microstructure of chromium deposits has nodular structure with some cracking pattern and nodule size increased with increasing deposit thickness.

초연합금절단공구상에 TiN의 화학증착피막에 관한 연구 (The Chemical Vapor Deposition of TiN on Cemented Tungsten Carbide Cutting Tools)

  • 이상래
    • 한국표면공학회지
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    • 제15권3호
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    • pp.138-145
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    • 1982
  • The effects of the simultaneous variations of the ratio of feed gases(H2/N2 Flow ratio), feed gas flow rate (H2/N2, total-flow rate) and partial pressures of TiCl4 (PTiCl41) as well as deposition time and cobalt content of the substrate on the deposition rate of the TiN Coated Cemented Tungsten Carbide Tools were investigated. Deposition was carried out in the temperature range of 930$^{\circ}C$-1080$^{\circ}C$ and an activation energy of 46.5 Kcal/mole can be calculated. Transverse rupture strength was noticeably reduced by the TiN coating on the virgin surfa-ce of Cemented Tungsten Carbide, the extent of which was decreased according to the coa-ting thickness. Microhardness value observed on the work was in the range of 1700∼2000kg/mm, which were in well agreement with the value of bult TiN. The wear resistance of TiN layers was performed by turning test and it was observed that crater and flank resistance remarkably enhanced by TiN coating.

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FDM에서 곡면부의 접선기울기가 쾌속조형물의 표면에 미치는 영향 (Influence of tangent line angle on surface roughness at fused deposition)

  • 전재억;권광진;정진서;김준안;김수광
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2002년도 춘계학술대회 논문집
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    • pp.1067-1070
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    • 2002
  • Fused deposition modelling(FDM) is a rapid prototyping(RP) process that fabricates part layer by layer by deposition of molten thermoplastic material extrude from a nozzle. RP system has many benefit. One of the benefit would be the ability to experiment with physical objects of any complexity in a relatively short period of time. But it has a matter of surface roughness and geometric accuracy. We study on Influence of tangent line angle on surface roughness at fused deposition

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