• 대한의생명과학회지
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• 제6권2호
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• pp.119-129
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• 2000

피부는 인체의 표면을 보호하는 중요한 기관으로 피부가 손상되었을 경우 상처 재생은 염증기, 상피화기, 수복기의 정상적인 재생 단계를 거치며 치유된다 최근 저강도 레이저의 생물학적 효과로서 상처 재생과의 밀접한 관련성이 알려지고 있다. 본 연구는 저강도 레이저가 상처 재생에 미치는 유의한 효과를 세포 형태학적으로 확인하기 위해 실험적으로 유도한 가토 피부 상처 (2$\times$2 cm)에 12일 동안 5 Hz, 830 nm, 1.6 J/$cm^2$의 자극강도 (10 min/day)로 상처면에 레이저를 적용한 결과, 다음과 같은 곁과를 얻었다. 레이저 조사군의 경우 결합조직의 수복과 상피의 재형성이 대조군과 비교했을 매우 빠르게 진행되는 것으로 관찰되었으며, 특히 섬유아세포의 활성과 육아조직 합성율이 유의하게 증가되는 것으로 확인되었다. 이상의 연구 곁과를 종합해 달 때 유효한 치료강도의 저강도 레이저 자극은 피부의 개방성 창상 및 욕창 등의 상처 치유를 촉진할 수 있는 것으로 사료된다.

• 한국진공학회지
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• 제19권1호
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• pp.10-13
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• 2010

본 논문은 N-face n-type GaN 표면에 산소 플라즈마 처리에 의해서 오믹전극과 접촉 저항을 낮추기 위한 연구를 하였다. 120초 산소 플라즈마 처리후 Ti (50 nm) / Al (35 nm)을 증착한 결과 오믹 전극을 구현하였으며, $1.25{\times}10^{-3}\;{\Omega}cm^2$의 접촉저항을 보였다. 이는 산소 플라즈마 처리가 기존의 플라즈마 처리와 같이 질소결원이 발생하였기 때문이다. 이를 통해 쇼트키장벽 높이(SBH)이 낮아지게 되었고, 오믹 전극및 플라즈마 처리를 안 한 경우보다 더 낮은 접촉저항의 결과를 획득하였다.

• 한국표면공학회지
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• 제29권6호
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• 한국표면공학회지
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• 제47권1호
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• pp.39-47
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• 2014

The peculiar feature of cathodic protection in seawater has the capability to form mineral calcareous deposits such as magnesium and calcium on metal surfaces. It is assumed that $OH^-$ ions are generated close to the metal surface as a result of cathodic protection and generated $OH^-$ ions increases the pH of the metal/seawater interface outlined as the following formulae. (1) $O_2+2H_2O+4e{\rightarrow}4OH^-$, or (2) $2H_2O+2e{\rightarrow}H_2+2OH^-$. And high pH causes precipitation of $Mg(OH)_2$ and $CaCO_3$ in accordance with the following formulae. (1) $Mg^{2+}+2OH^-{\rightarrow}Mg(OH)_2$, (2) $Ca^{2+}+CO{_3}^{2-}{\rightarrow}CaCO_3$. The focus of this study was to increase the amount of $CO{_3}^{2-}$ with the injection of $CO_2$ gas to the solution for accelerating process of the following formulae. (1) $H_2O+CO_2{\rightarrow}H_2CO_3$, (2) $HCO^{3-}{\rightarrow}{H^+}+CO{_3}^{2-}$. Electrodeposit films were formed by an electro-deposition technique on steel substrates in solutions of both natural seawater and natural seawater dissolved $CO_2$ gas with different current densities, over different time periods. The contents of films were investigated by scanning electron microscopy(SEM) and X-ray diffraction(XRD). The adhesion and corrosion resistance of the coating films were evaluated by anodic polarization. From an experimental result, only $CaCO_3$ were found in solution where injected $CO_2$ gas regardless of current density. In case of injecting the $CO_2$ gas, weight gain of electrodeposits films hugely increased and it had appropriate physical properties.

• 대한기계학회논문집
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• 제17권1호
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• pp.200-214
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• 1993

본 연구에서는 Westinghouse Model 51 증기발생기의 U-bend 영역에서 2차측 유체의 횡단유동으로 유발될 수 있는 튜브군의 유체탄성불안정을 예측하기 위한 해석 을 수행하고 그 대표적인 결과들을 제시하였다. 그리고 U-bend 영역에서 AVB에 의한 튜브의 지지상태와 형태 및 최상부 TSP에서 Denting 또는 이물질 고착으로 인하여 변 경된 튜브의 고정지지조건 등이 튜브의 유체탄성불안정 응답에 미치는 영향을 조사하 였다. 유체탄성불안정 해석과정에서 필수적으로 선행되어야 하는 2차측 3차원 2상 유동장 계산은 증기발생기 열수력 해석용인 ATHOS3 코드로써 수행되었으며, U-튜브의 고유진동수와 모우드 형상은 공학해석용 유한요소 프로그램인 ANSYS코드로써 계산되었 다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.391-392
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• 2012

In these days, the desire for the precise and tiny displays in mobile application has been increased strongly. Currently, laser displays ranging from large-size laser TV to mobile projectors, are commercially available or due to appear on the market [1]. In order to achieve a mobile projectors, the semiconductor laser diodes should be used as a laser source due to their size and weight. In this presentation, the continuous etch characteristics of Pd and AlGaN/GaN superlattice for the fabrication of blue laser diodes were investigated by using inductively coupled $CHF_3$ and $Cl_2$ -based plasma. The GaN laser diode samples were grown on the sapphire (0001) substrate using a metal organic chemical vapor deposition system. A Si-doped GaN layer was grown on the substrate, followed by growth of LD structures, including the active layers of InGaN/GaN quantum well and barriers layer, as shown in other literature [2], and the palladium was used as a p-type ohmic contact metal. The etch rate of AlGaN/GaN superlattice (2.5/2.5 nm for 100 periods) and n-GaN by using $Cl_2$ (90%)/Ar (10%) and $Cl_2$ (50%)/$CHF_3$ (50%) plasma chemistry, respectively. While when the $Cl_2$/Ar plasma were used, the etch rate of AlGaN/GaN superlattice shows a similar etch rate as that of n-GaN, the $Cl_2/CHF_3$ plasma shows decreased etch rate, compared with that of $Cl_2$/Ar plasma, especially for AlGaN/GaN superlattice. Furthermore, it was also found that the Pd which is deposited on top of the superlattice couldn't be etched with $Cl_2$/Ar plasma. It was indicating that the etching step should be separated into 2 steps for the Pd etching and the superlattice etching, respectively. The etched surface of stacked Pd/superlattice as a result of 2-step etching process including Pd etching ($Cl_2/CHF_3$) and SLs ($Cl_2$/Ar) etching, respectively. EDX results shows that the etched surface is a GaN waveguide free from the Al, indicating the SLs were fully removed by etching. Furthermore, the optical and electrical properties will be also investigated in this presentation. In summary, Pd/AlGaN/GaN SLs were successfully etched exploiting noble 2-step etching processes.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.142.2-142.2
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• 2018

One-dimensional metal oxide nanostructures have attracted considerable research activities owing to their strong application potential as components for nanosize electronic or optoelectronic devices utilizing superior optical and electrical properties. In which, semiconducting $SnO_2$ material with wide-bandgap Eg = 3.6 eV at room temperature, is one of the attractive candidates for optoelectronic devices operating at room temperature [1, 2], gas sensor [3, 4], and transparent conducting electrodes [5]. The synthesis and gas sensing properties of semiconducting $SnO_2$ nanomaterials have become one of important research issues since the first synthesis of SnO2 nanowires. In this study, $SnO_2$ nanowire networks were synthesized on a basis of a two-step process. In step 1, Sn spheres (30-800 nm in diameter) embedded in $SiO_2$ on a Si substrate was synthesized by a chemical vapor deposition method at $700^{\circ}C$. In step 2, using the source of these Sn spheres, $SnO_2$ nanowire (20-40 nm in diameter; $1-10{\mu}m$ in length) networks on a spherical Sn surface were synthesized by a thermal oxidation method at $800^{\circ}C$. The Au layers were pre-deposited on the surface of Sn spherical and subsequently oxidized Sn surface of Sn spherical formed SnO2 nanowires networks. Field emission scanning electron microscopy and high-resolution transmission electron microscopy images indicated that $SnO_2$ nanowires are single crystalline. In addition, the $SnO_2$ nanowire is also a tetragonal rutile, with the preferred growth directions along [100] and a lattice spacing of 0.237 nm. Subsequently, the $NO_2$ sensing properties of the $SnO_2$ network nanowires sensor at an operating temperature of $50-250^{\circ}C$ were examined, and showed a reversible response to $NO_2$ at various $NO_2$ concentrations. Finally, details of the growth mechanism and formation of Sn spheres and $SnO_2$ nanowire networks are also discussed.

• 한국해안·해양공학회논문집
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• 제22권1호
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• pp.58-66
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• 2010

본 논문에서는 지상 LiDAR 및 MBES(다중빔 음향측심기)를 이용하여 정밀 지형 및 수심측량을 실시하였고, 조간대 영역의 육도-해도 접합을 통하여 대조차 해안인 만리포에 대한 정밀 지형도를 작성하였다. 제한된 시간내에 조간대 영역의 충분한 지형정보 획득을 위하여 간조시 지상 LiDAR 및 DGPS를 차량지붕에 탑재하여 이동 정지 스캐닝의 해변 전체의 지형정보를 획득하였고, 이와 동시에 만조시 MBES를 통하여 수심측량을 실시하였으며 조위계 설치와 목측을 통한 조위관측의 병행을 통하여 수심보정자료 및 만리포의 평균해면 추산자료로 사용하였다. 조간대 정합을 위해 지형 및 수심자료의 수직좌표계 기준면은 인천 평균해면으로 단일화하였으며, 조간대 평균 중첩오차는 약 2~6 cm 이내로 나타났다. 또한 지상 LiDAR 자료의 정확도 검증을 위해 RTK-DGPS 측량을 동시에 실시하여 수직좌표값을 비교한 결과 평균 제곱근 오차가 약 4~7 cm 이내로 나타났다. 정밀지형도 작성은 GIS 기반 자료처리를 통하여 50 cm 해상도를 갖는 수치표고자료로 생산하였으며, 이는 현재 연안지역 침수범람 예측을 위한 폭풍해일 침수범람 예측모델의 정밀 입력자료로 사용되고 있다. 또한 장기간에 걸친 주기적 측량 자료와 측량시의 인위적 해변 변화량 및 해양환경정보를 함께 고려하여 3차원 공간분석을 실시한다면 침 퇴적양의 정확한 산출을 통하여 연안 모니터링에도 효과적으로 활용될 수 있을 것이다.

• 대한치과보철학회지
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• 제43권1호
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• pp.78-94
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• 2005

Purpose. The purpose of this study was to compare the effects of various surface treatments by measuring resonance frequency and histomorphometric analyses. Material and methods. In 5 adult dogs, the mandibular premolar were extracted. Six months later, 30 screw titanium implants (Dentium Co., Seoul, Korea) 6mm in length and 3.4mm in diameter, were placed in the mandibles of 5 dogs. Implants were divided into five groups following to surface treatment methods ; Group 1 is machined controls, Group 2 is sandblasted with large grit and acid-etched (SLA), Group 3 is anodized (Autoelectric Co., Korea, 660Hz, Duty10), Group 4 is hydroxyapatite(HA) coated by ion beam assisted deposition(E-beam), Group 5 is hydroxyapatite(HA) coated with Sol-gel coating process. Resonance frequency was measured implant placement immediately, and 3, 6 weeks and 10 weeks of healing perods. With the animal subject's sacrifice 10 weeks after implantation, implants were removed on bloc and histologic and computer-based histomorphometric analyses were performed. Histomorphometric analysis involved quantification of the entire bone to metal contact around the implants. Statistical analyses were performed using the SPSS for Windows (ver. 9.0 SPSS Inc.) Statistical differences were considered significant at P<0.05. Results. The results were as follows : 1) In five groups, mean value of resonance frequency analysis(RFA) were highest in group 5 (Sol-gel implant) at implantation and those of group 4 (E-beam)was highest at 10 weeks . but there was no correlation between surface treatments and RFA. 2) In all surface treatment groups, the RFA values of implants decreased until 3 weeks and increased to 10 weeks. 3) The percentage of direct bone-to-implant contact (BIC) had statistical significance between five groups in cancellous bone, (P<0.05) the percentage of bone density inside the thread had no statistical significance between five groups. (P>0.05) 4) There was a significant difference between cortical bone and cancellous bone in BIC. (P<0.05) and bone density. (P<0.05) 5) There was a correlation between the RFA value of implants at 10 weeks and BIC in cancellous bone, and between the RFA value of implants at 10 weeks and bone density in cortical bone. (P<0.05). Conclusions. These results indicate that surface treatment does not affect the implant stability in case of good bone quality.

• 한국자기학회지
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• 제20권2호
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• pp.35-40
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• 2010

NiFe/Cu/NiFe/IrMn 스핀밸브 박막소자에 대해 자화 용이축에 의존하는 형상 자기이방성을 조사하였다. Ta(5 nm)/NiFe(8 nm)/Cu(2.3 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm) 다층박막을 증착할 때 350 Oe의 자기장으로 인가한 자화 용이축을 폭 방향 또는 길이 방향으로 설정하여 $1\;{\mu}m\;{\times}\;18\;{\mu}m$의 소자를 제작하였다. 2단자 방법으로 소자의 자기저항 곡선으로부터 자장감응도를 측정하고 자화 용이축에 따른 형상 자기이방성을 비교하였다. 측정한 소자 길이 방향의 센싱전류와 고정층의 자화 용이축이 소자 폭방향 각도가 GMR-SV 소자를 바이오센서로 활용하는데 중요한 요인임을 확인하였다.