• Korean Journal of Materials Research
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• v.23 no.10
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• pp.580-585
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• 2013

To observe the formation of defects at the interface between an oxide semiconductor and $SiO_2$, ZnO was prepared on $SiO_2$ with various oxygen gas flow rates by RF magnetron sputtering deposition. The crystallinity of ZnO depends on the characteristic of the surface of the substrate. The crystallinity of ZnO on a Si wafer increased due to the activation of ionic interactions after an annealing process, whereas that of ZnO on $SiO_2$ changed due to the various types of defects which had formed as a result of the deposition conditions and the annealing process. To observe the chemical shift to understand of defect deformations at the interface between the ZnO and $SiO_2$, the O 1s electron spectra were convoluted into three sub-peaks by a Gaussian fitting. The O 1s electron spectra consisted of three peaks as metal oxygen (at 530.5 eV), $O^{2-}$ ions in an oxygen-deficient region (at 531.66 eV) and OH bonding (at 532.5 eV). In view of the crystallinity from the peak (103) in the XRD pattern, the metal oxygen increased with a decrease in the crystallinity. However, the low FWHM (full width at half maximum) at the (103) plane caused by the high crystallinity depended on the increment of the oxygen vacancies at 531.66 eV due to the generation of $O^{2-}$ ions in the oxygen-deficient region formed by thermal activation energy.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.12 no.1
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• pp.45-57
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• 2014

Academic interests in ionic liquid (IL) technologies have been extended to the nuclear industry and the applicability of ionic liquids for processing radioactive materials have been investigated by many researchers. A number of studies have reported interesting results with respect to the spectroscopic and electrochemical behaviors of metal elements included in spent nuclear fuels. The measured and observed properties of metal ions in TBP(tri-butyl phosphate) dissolved ILs have led the development of alternative technologies to traditional aqueous processes. On the other hand, the electrochemical deposition of metal ions in ILs have been investigated for the application of the solvents to aqueous as well as to non-aqueous processes. In this work, a review on the application of ILs in nuclear fuel cycle is presented for the purpose of categorizing and summarizing the notable researches on ILs.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.11
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• pp.2209-2213
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• 2009

$REBa_{2}Cu_{3}O_{7-d}$(REBCO) coated conductors(REBCO CCs) have been studied for electric power applications which require high current density wires. As long as the critical transition temperature(Tc) is concerned, REBCO CCs with large $RE^{3+}$ ions have been expected to have better current transport properties than those with smaller $RE^{3+}$ ions. For this reason, REBCO's with large $RE^{3+}$ ions which include GdBCO, NdBCO and SmBCO have been mainly considered as the superconducting layer of CCs. On the other hand, REBCO's with smaller $RE^{3+}$ions are expected to have advantages in the fabrication process of CCs because of the lower melting temperature. But it has not yet been made clear which REBCO is the most suitable for the superconducting layer of CCs. In this study, we investigated the current transport properties of REBCO CCs with small $RE^{3+}$ ion and advantages of using that in the CC fabrication process. Thin films of TmBCO, which has smaller $RE^{3+}$ion than most other $RE^{3+}$ ions, were fabricated on buffered metal substrate as the superconducting layer of CC by PLD process. TmBCO CC shows critical current density (Jc (77 K, sf) = $2.3\;MA/cm^2$) high enough to be utilized for application in electric power devices. Compared with previous experiments using the same PLD system, deposition temperature was approximately $20^{\circ}C$ lower than NdBCO thin films on buffered metal substrates.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Korean Journal of Crystallography
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• v.17 no.2
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• pp.51-54
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• 2006

BaO layers were formed on the Si(100) surface by thermal evaporation of barium metal with simultaneous oxidation. The atomic structure of BaO layers at the initial stage of the deposition was investigated by the scattering intensity variation of $He^+$ions on time-of-flight (TOF) impact-collision ion scattering (ICISS). The results show that several number of BaO layers are formed on the Si(100) surface with the lattice parameter of bulk phase, and the occupation of oxygen atoms of the BaO layers is on-top site of silicon atoms.

• The Korean Journal of Ceramics
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• v.1 no.1
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• pp.21-28
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• 1995

Electrical conductivity of $TiO_2$ thin films, deposited on $Al_2O_3$ substrates by metal organic chemical vapor deposition (MOCVD), was measured by four-point probe method in a temperature range from $800^{\circ}C$ to $1025^{\circ}C$ and an oxygen partial pressure range from $2.7{\times}10^{-5}$ atm to 1 atm. In the low oxygen partial pressure region n-type conduction was dominant, but in the high oxygen partial pressure region p-type conduction behavior appeared due to substitution of Ti ions by Al ions, which were diffused from the substrate during post deposition annealing process. Electrical conductivity of the film decreases in the n-type region and increases in the p-type region as the oxygen partial pressure increases. The transition points, which show the minimum conductivity, shifted to the higher oxygen partial pressure region as the measuring temperature increased, but it shifted to lower oxygen partial pressure region with an increase in the post annealing temperature. The results were also discussed with the possible defect models.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.427-427
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• 2016

Organic-inorganic hybrid perovskite have attracted significant attention as a new revolutionary light absorber for photovoltaic device due to its remarkable characteristics such as long charge diffusion lengths (100-1000nm), low recombination rate, and high extinction coefficient. Recently, power conversion efficiency of perovskite solar cell is above 20% that is approached to crystalline silicon solar cells. Planar heterojunction perovskite solar cells have simple device structure and can be fabricated low temperature process due to absence of mesoporous scaffold that should be annealed over 500 oC. However, in the planar structure, controlling perovskite film qualities such as crystallinity and coverage is important for high performances. Those controlling methods in one-step deposition have been reported such as adding additive, solvent-engineering, using anti-solvent, for pin-hole free perovskite layer to reduce shunting paths connecting between electron transport layer and hole transport layer. Here, we studied the effect of alkali metal halide to control the fabrication process of perovskite film. During the morphology determination step, alkali metal halides can affect film morphologies by intercalating with PbI2 layer and reducing $CH3NH3PbI3{\cdot}DMF$ intermediate phase resulting in needle shape morphology. As types of alkali metal ions, the diverse grain sizes of film were observed due to different crystallization rate depending on the size of alkali metal ions. The pin-hole free perovskite film was obtained with this method, and the resulting perovskite solar cells showed higher performance as > 10% of power conversion efficiency in large size perovskite solar cell as $5{\times}5cm$. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and inductively coupled plasma optical emission spectrometry (ICP-OES) are analyzed to prove the mechanism of perovskite film formation with alkali metal halides.

• Applied Chemistry for Engineering
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• v.24 no.5
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• pp.551-557
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• 2013

In the present study, pristine carbon nanotube (p-CNT) and thiolated carbon naotube (t-CNT) electrodes were investigated to improve their detectabilities for cadmium (Cd) and lead (Pb). In addition, we evaluate which reaction mechanism is used when the electrolyte contains both Cd and Pb metals. Square wave stripping was employed for analyzing the sensitivity for the metals. A frequency of 30 Hz, a deposition potential of -1.2 V vs. Ag/AgCl and a deposition time of 300 s were used as optimal SWSV parameters. t-CNT electrodes show the better sensitivity for both Cd and Pb metals than that of p-CNT electrodes. In case of Cd, sensitivities of p-CNT and t-CNT electrodes were $3.1{\mu}A/{\mu}M$ and $4.6{\mu}A/{\mu}M$, respectively, while the sensitivities for Pb were $6.5{\mu}A/{\mu}M$ (p-CNT) and $9.9{\mu}A/{\mu}M$ (t-CNT), respectively. The better sensitivity of p-CNT electrodes is due to the enhancement in the reaction rate of metal ions that are facilitated by thiol groups attached on the surface of CNT. When sensitivity was measured for the detection of Cd and Pb metals present simultaneously in the electrolyte, Pb indicates better sensitivity than Cd irrespective of electrode types. It is ascribed to the low standard electrode potential of Pb, which then promotes the possibility of oxidation reaction of the Pb metal ions. In turn, the Pb metal ions are deposited on the electrode surface faster than that of Cd metal ions and cover the electrode surface during deposition step, and thus Pb metals that cover the large portion of the surface are more easily stripped than that of Cd metals during stripping step.

• Bulletin of the Korean Chemical Society
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• v.11 no.3
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• pp.200-205
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• 1990

Chemically modified electrodes(CMEs), based on 2-imino-1-cyclopentane-dithiocarboxylic acid (icdc) containing carbon paste, have been characterized using cyclic voltammetric techniques. Ag(I) was chemically deposited on the CMEs, and voltammograms were obtained with the electrode in a separate buffer solution. The CME surface can be regenerated with exposure to acid and reused for deposition. In 10 deposition/measurement/regenerate cycles, the linear response have been reproduced up to $1{\times}10^{-6}$ M in linear sweep voltammetry and 1${\times}$10-8 M in differential pulse voltammetry with relative standard deviation of 5.2% and 12.4%, respectiveiy. The sensitivity increased with deposition time and scanning rate, and detection limit was $1{\times}10^{-7}M\;and\;1{\times}10^{-9}M$ at 20 minutes deposition in the linear sweep voltammetry and differential pulse voltammetry, respectively. The presence of some metal ions does not influence the silver ion response. Satisfactory results were obtained for the analysis of the silver ion for a variety of reference materials without interference of Hg ion at the condition of pH = 5-6.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.198-201
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• 1994

Stability improvement of fragile LB films was attempted by polyion complexation of monolayers at the air-water interface and crosslinking of the resulting LB films. The spreading polymers were synthesized by radical copolymerization of monoalkyl itaconate with oligoethyleneglycol methyl vinylether, and poly(allylamine) was employed as the subphase polymer. Formation and characteristic of the monolayers were comfirmed by surface pressure-area($\pi$-A) isotherms. The two different polymers formed polyion-complexed monolayer through the formation of carboxylate/ammonium salt at the air-water interface. Y-type deposition occurred on solid substrates, and the transfer ratio was over 0.7. Pores (diameter, 0.1$\mu\textrm{m}$) of a membrane filter could be covered by polyion-complexed 6 layers. Interactions of the polymers with metal ions were investigated of the air-water interface and in the LB films. The structure change and macroscope morphology of the LB films were confirmed by FT-lR and SEM, respective1y.