• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.40-49
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• 2001

We have developed a repeatable process of forming uniform, small-size and high-density self-assembled Si nano-crystals. The Si nano-crystals were fabricated in a conventional LPCVD (low pressure chemical vapor deposition) reactor at $620^{\circ}c$ for 15 sec. The nano-crystals were spherical shaped with about 4.5 nm in diameter and density of $5{\times}l0^{11}/$\textrm{cm}^2$. More uniform dots were fabricated on nitride film than on oxide film. To take advantage of the above-mentioned characteristics of nitride film while keeping the high interface quality between the tunneling dielectrics and the Si substrate, nitride-oxide tunneling dielectrics is proposed in n-channel device. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of ${\Delta}Ｖ_{GS}\;{\approx}\;1.7{\;}V$, corresponding to single and multiple electron storage is reported. The feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demonstrated. The programming mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tunneling component from inversion layer is dominant. However, valence band electron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.605-608
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• 2004

A novel blue-green emitting aluminum complex was developed by employing 8-hydroxyquinoline as co-ligand for enhancement of electron transport and light emission abilities so that the electroluminescent (EL) devices do not need additional electron transport layer. The aluminum complex (PAlQ) of 8-hydroxyquinoline and ${\alpha}$-pyridoin was synthesized The structure of the PAlQ was elucidated by FT-IR, UV-Vis and XPS. The PAlQ complex showed thermal stability up to 350$^{\circ}C$ under nitrogen flow by TGA. The photoluminescence (PL) was measured from solid film of the PAlQ complex on quartz substrate. The EL device was fabricated by the vacuum deposition. The device having the structure of ITO/TPD/PAlQ/Al was studied, where N,N-bis(3-methylphenyl}-N,N'-diphenyl-benzidine (TPD) was used as a hole transporting layer. The EL device emitted a blue-green light.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1319-1322
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• 2008

$CsN_3$ was developed as a novel n doping material with air stability and low deposition temperature. Evaporation temperature of $CsN_3$ was similar to that of common hole injection material and it worked well as a n dopant in electron transport layer. Driving voltage was lowered and high power efficiency was obtained in green phosphorescent devices by using $CsN_3$ as a dopant in electron transport layer. It could also be used as a charge generation layer in combination with $MoO_3$. In addition, n doping mechanism study revealed that $CsN_3$ is decomposed into Cs and $N_2$ during evaporation. This is the first work reporting air stable and low temperature evaporable n dopant in organic light-emitting diodes.

• Proceedings of the Korean Geotechical Society Conference
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• 2004.03b
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• pp.203-210
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• 2004

Consolidation properties were analysed by means of depositional environments. Depositional environments including geochemical properties, porewater chemistry, sediment structures, particle size distributions and carbon age dating were analysed using undisturbed samples retrieved successively from a boring hole in the study area. Laboratory oedometer tests and anisotropic consolidated triaxial tests(CKoUC) were performed to examine the overconsolidation phenomenons. Based on the carbon age dating results and profiles of geochemical properties, porewater chemistry, salinity and pH, it was founded that the upper silt/clay complex layer was deposited under marine condition while sand and clay layers were deposited under fluvial condition. Planar laminated structures of silts and clays were dominant in marine deposits. Although there was no clear evidences that geological erosion had been occurred in marine deposits, overconsolidation ratio obtained from oedometer tests were greater than unity. Stress paths of samples behaved similar to those of normally consolidated clays. Data plotted in stress state charts proposed by Burland(1990) and Chandler(2000) showed that the marine deposits were geologically normally consolidated. These apparent overconsolidations can be explained by the fabric and chemical bonding due to the difference of the rate of deposition.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1280-1283
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• 2005

A novel zinc complex, Zn(phen)q, was synthesized from 1,10-phenanthroline (phen) and 8-hydroxyquinoline (q) as organic ligands and its electroluminescent (EL) properties were characterized. The structure of Zn(phen)q was elucidated by FT-IR, UV-Vis and XPS. The complex Zn(phen)q showed thermal stability up to $300^{\circ}C$ under nitrogen flow, which was measured by TGA and DSC. The photoluminescence (PL) of the Zn(phen)q was measured from the THF solution and the solid film on quartz substrate. The PL emission of Zn(phen)q exhibited green light centered at about 505nm. The EL devices were fabricated by the vacuum deposition. The EL devices having the structure of ITO/a-NPD/Zn(phen)q/Li:Al were studied, where 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl(a-NPD) used as a hole transport layer(HTL). a-NPD has high Tg of $96^{\circ}C$ and thus makes the device thermally stable. The EL emission of Zn(phen)q exhibited also green light centered at 532nm.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.893-896
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• 2003

Plasma polymerized para-xylene (PPpX) thin films deposited by plasma enhanced chemical vapor deposition (PECVD) were used to passivate the organic light emitting diodes (OLEDs). For OLEDs, indium tin oxide (ITO), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD), tris(8-hydroxyquinoline) aluminum $(Alq_{3})$ and aluminum (Al) were used as the anode, the hole transport layer (HTL), the emitting layer (EML) and the cathode, respectively. The OLED device with the PPpX passivation film (passivated device) showed similar electrical and optical characteristics to those of the OLED device without the PPpX passivation film (control device), indicating that the PECVD process did not degrade the performance of the OLEDs notably. The lifetime of the passivated device was two times longer than that of the control device. Passivation of OLEDs with PPpX films also suppressed the growth of dark spots. The density and size of dark spots of the passivated device were much smaller than those of the control device.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.889-892
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• 2003

Effects of $N_{2}$ plasma treatment of the Al bottom cathode on the characteristics of top emission inverted organic light emitting diodes (TEIOLEDs) were studied. TEIOLEDs were fabricated by depositing an Al bottom cathode, a tris-(8-hydroxyquinoline) aluminum $(Alq_{3})$ emitting layer, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'diamine (TPD) hole transport layer, and an indium tin oxide (ITO) top anode sequentially. The Al bottom cathode layer was subjected to $N_{2}$ plasma treatment before deposition of the $Alq_{3}$ layer. X-ray photoelectron spectroscopy suggested that the existence of and the amount of $AIN_x$ between the $Alq_{3}$ emitting layer and the Al bottom cathode significantly affect the characteristics of TEIOLEDs. The maximum external quantum efficiency of the TEIOLED with an Ai bottom cathode subjected to $N_{2}$ plasma treatment for 30 s was about twice as high as that of the TEIOLED with an untreated Al bottom cathode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.598-602
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• 2004

Organic light entitling diode panel was fabricated using pulsed laser deposition (PLD) method Nd-YAG laser with Q-Switched and 355 nm pulse was used for the PLD. While TPD(N,N'-Di-[naphthaleny]-N, N'-diphenyl-benzidine) was used as a HTL(Hole transport layer), $Alq_3$(8-Hydroxyquinoline, Aluminum Salt) was used as EML/ETL(Emitting Layer/Electron Transport Layer) Organic pellet was fabricated and employed for the PLD method. The absorbances of the organic films were investigated and the measured absorbance values of TPD and $Alq_3$ films was 362 nm and 399 nm, respectively. The turn-on voltage of the OLED panel was 7.5 V and its luminance was $90\;cd/m^2$

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.351.1-351.1
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• 2014

In this study, we prepared the solution-based In-Ga-Zn oxide thin film transistors (IGZO TFTs) of multistacked active layer and characterized the gate bias instability by measuring the change in threshold voltage caused by stacking. The solutions for IGZO active layer were prepared by In:Zn=1:1 mole ratio and the ratio of Ga was changed from 20% to 30%. The TFTs with multistacked active layer was fabricated by stacking single, double and triple layers from the prepared solutions. As the number of active layer increases, the saturation mobility shows the value of 1.2, 0.8 and 0.6 (). The electrical properties have the tendency such as decreasing. However when gate bias VG=10 V is forced to gate electrode for 3000 s, the threshold voltage shift was decreased from 4.74 V to 1.27 V. Because the interface is formed between the each layers and this affected the current path to reduce the electrical performances. But the uniformity of active layer was improved by stacking active layer with filling the hole formed during pre-baking so the stability of device was improved. These results suggest that the deposition of multistacked active layer improve the stability of the device.

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.124-131
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• 1999

Copper film, which is expected to be used as interconnection material for 1 giga DRAM integrated circuits was deposited on hole and trench patterns by Metal Organic Chemical Vapor Deposition(MOCVD) method. After a reflow process, contact and L/S patterns were filled by copper and the characteristics of the Cu reflow process were investigated. When deposited Cu films were reflowed, grain growth and agglomeration of Cu have occurred in surfaces and inner parts of patterns as well as complete filling in patterns. Also Cu thin oxide layers were formed on the surface of Cu films reflowed in $O_2$ambient. Agglomeration and oxidation of Cu had bad influence on the electrical properties of Cu films especially, therefore, their removal and prevention were studied simultaneously. As a pattern size is decreased, preferential reflow takes place inside the patterns and this makes advantages in filling patterns of deep submicron size completely. With Cu reflow process, we could fill the patterns with the size of deep sub-micron and it is expected that Cu reflow process could meet the conditions of excellent interconnection for 1 giga DRAM device when it is combined with Cu MOCVD and CMP process.