• The Journal of the Petrological Society of Korea
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• v.14 no.2 s.40
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• pp.116-126
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• 2005

The Precambrian quartzite and calc-schist layers experienced multi-1310ing events are distributed along the two kinds of U-shaped 1310 (Fold I and II) with $N10^{\circ}E-directed$ fo1d axis in Wollong-myeon, Gwangtan-myeon, Jori-myeon of Paju city, the northeastern part of Gyeonggido. Occurrence of 10 layers of quartzite and 4 layers of calc-schist is not clear whether quartzite and schist layers were deposited sequentially each other or one to two layers of quartzite and schist were distributed repeatedly by isoclinal folding and thrusting, because of lack of sedimentary structures. In this paper, we tried to clarify the correlative relationship among the quartzite beds which are distributed along the U-shaped folds using geochemical tools such as rare earth element (REE) patterns and Nd isotope ratio. Quartzites have characteristics of LREE-flattened, HREE- slightly depleted patterns. They also show Ce negative anomaly whereas there are no Eu anomalies. As a result, quartzite beds occurred along the bilateral sides of fold axis show very similar REE patterns from outer side to inner side of 1314. The Nd model age of quartzite layers shows a trend that the inner part of fold is younger than the outer part of it. Such geochemical characteristics suggest that bilateral quartzite beds occurred along the fold axis were derived from the cogenetic source materials. The REE patterns and trace element geochemistry of mica schist intercalated within quartzite indicate that the quartzite and mica schist may be derived from different source materials. Our results suggest that REE and Nd isotope geochemistries may be very useful in clarifying the relationship of sedimentary deposits which do not show stratigraphical and structural connections in the field.

• Korean Journal of Materials Research
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• v.2 no.6
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• pp.408-416
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• 1992

Stable TiS$i_2$was formed by RTA on single-Si and on poly-Si. Subsequently, an Al-1% Si layer with 600-nm thick was deposited on top of the TiS$i_2$, Finally, the specimens were annealed for 30min at 400-60$0^{\circ}C$in $N_2$ambient. The thermal stability of Al-1% Si/TiS$i_2$bilayer and interfacial reaction were investigated by measuring sheet resistance, Auger electron spectroscopy (AES), and scanning electron microscopy (SEM). The composition and phase of precipitates formed by the reaction of Al-1% Si with Ti-silicide were studied by energy dispersive spectroscopy (EDS), X-ray diffraction (XRD). In the case of single-Si substrate the reaction of Al-1% Si layer with TiS$i_2$layer resulted in precipitates, consuming all TiS$i_2$layer at 55$0^{\circ}C$. On the other hand, the disappearance of TiS$i_2$on poly-Si occurred at 50$0^{\circ}C$ and more precipitates were formed by the reaction of Al-1% Si/TiS$i_2$on potty-Si substrate than those of the reaction on single-Si substrate. This phenomenon resulted from the fact that Ti-silicide formed on poly-Si was more unstable than on single-Si by the effect of grain boundary. By EDS analysis the precipitates were found tobe composed of Ti, Al, and Si. X-ray diffraction showed the phase of precipitates to be theT$i_7$A$l_5$S$i_12$ternary compound.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.138-147
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• 2001

The stochiometric mixtures mixture of evaporating materials for the $ZnIn_{2}S_{4}$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_{2}S_{4}$ single crystal thin film, $ZnIn_{2}S_{4}$ mixed crystal was deposited on throughly etched semi-insulting GaAs(100) in the Hot Wall Epitaxy(HWE) system. The sourceand substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_{2}S_{4}$ single crystal thin film was about 0.5$\mu\textrm{m}$/hr. The crystalline structure of $ZnIn_{2}S_{4}$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction (DCXD) measurement. The carrier density and mobility of $ZnIn_{2}S_{4}$ single crystal thin film measured from Hal effect by van der Pauw method are $8.51{\times}10^{17}{\textrm}{cm}^{-3}$, 291$\textrm{cm}^2$/V.s at $293^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $ZnIn_{2}S_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal filed splitting DCr were 0.0148eV and 0.1678 eV at $10^{\circ}$K, respectively. From the photoluminescence measurement of $ZnIn_{2}S_{4}$ single crystal thin film, we observed free excition($E_{X}$) typically observed only in high quality crystal and neutral donor bound exicton ($D^{\circ}$, X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9meV and 26meV, respectively. The activation energy of impurity measured by Haynes rule was 130meV.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.229-236
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• 2014

A stoichiometric mixture of evaporating materials for $MnAl_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MnAl_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MnAl_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.7920eV-5.2729{\times}10^{-4}eV/K)T^2/(T+786 K)$. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (${\gamma}$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation (MAPD) and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapour compare with in Mn, Al, air and vacuum vapour. Then we obtained the sensitivity of 0.93, the value of pc/dc of $1.10{\times}10^7$, the MAPD of 316 mW, and the rise and decay time of 14.8 ms and 12.1 ms, respectively.

• Korean journal of applied entomology
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• v.48 no.2
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• pp.221-227
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• 2009

Temperature effects on diapause termination of Paratlanticus ussuriensis eggs were studied by measuring embryonic development and hatching rates at various conditions of indoor chilling and overwintering temperatures. Diapausing eggs of P. ussuriensis did not hatch at continued incubation at $25^{\circ}C$ and even after chilling for once at either $5^{\circ}C$ or $10^{\circ}C$ for 30, 45 and 60 days. In addition, double chillings at $5^{\circ}C$ with a 90 days interval at $25^{\circ}C$ did not induce hatching of diapausing eggs. However, double chillings at $10^{\circ}C$ induced hatching at 3.6${\sim}$26.7%. When eggs were incubated at $25^{\circ}C$ after chilling for once at $5^{\circ}C$ for various periods, those weights were not changed but those chilled at $10^{\circ}C$ gradually increased to approximately 1.5 times. When 60-days-old eggs were artificially deposited under the soil at three different mountain sites in September 2007, the hatching rates of the first-overwintered eggs were 11.3, 3.5 and 4.1% and those of the second-overwintered eggs were 25.1, 21.6 and 0.4% at Hoepori, Bitanri and Hwasanri, respectively. Most eggs were hatched from mid-March to mid-April but little bit earlier in southern regions. During the hatching period soil temperatures in three tested locations were around 8 to $12^{\circ}C$. In overall, diapausing eggs of P. ussuriensis were greatly influenced by chilling temperature conditions and those repeated cycles, and may required overwintering for one or two times to hatch for the post-embryonic development.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.107-108
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• 2008

The spectacular development of AMLCDs, been made possible by a-Si:H technology, still faces two major drawbacks due to the intrinsic structure of a-Si:H, namely a low mobility and most important a shift of the transfer characteristics of the TFTs when submitted to bias stress. This has lead to strong research in the crystallization of a-Si:H films by laser and furnace annealing to produce polycrystalline silicon TFTs. While these devices show improved mobility and stability, they suffer from uniformity over large areas and increased cost. In the last decade we have focused on microcrystalline silicon (${\mu}c$-Si:H) for bottom gate TFTs, which can hopefully meet all the requirements for mass production of large area AMOLED displays [1,2]. In this presentation we will focus on the transfer of a deposition process based on the use of $SiF_4$-Ar-$H_2$ mixtures from a small area research laboratory reactor into an industrial gen 1 AKT reactor. We will first discuss on the optimization of the process conditions leading to fully crystallized films without any amorphous incubation layer, suitable for bottom gate TFTS, as well as on the use of plasma diagnostics to increase the deposition rate up to 0.5 nm/s [3]. The use of silicon nanocrystals appears as an elegant way to circumvent the opposite requirements of a high deposition rate and a fully crystallized interface [4]. The optimized process conditions are transferred to large area substrates in an industrial environment, on which some process adjustment was required to reproduce the material properties achieved in the laboratory scale reactor. For optimized process conditions, the homogeneity of the optical and electronic properties of the ${\mu}c$-Si:H films deposited on $300{\times}400\;mm$ substrates was checked by a set of complementary techniques. Spectroscopic ellipsometry, Raman spectroscopy, dark conductivity, time resolved microwave conductivity and hydrogen evolution measurements allowed demonstrating an excellent homogeneity in the structure and transport properties of the films. On the basis of these results, optimized process conditions were applied to TFTs, for which both bottom gate and top gate structures were studied aiming to achieve characteristics suitable for driving AMOLED displays. Results on the homogeneity of the TFT characteristics over the large area substrates and stability will be presented, as well as their application as a backplane for an AMOLED display.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.5C
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• pp.664-672
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• 2004

Widespread popularity of wireless data communication devices, coupled with the availability of higher bandwidths, has led to an increased user demand for content-rich media such as images and videos. Since such content often tends to be private, sensitive, or paid for, there exists a requirement for securing such communication. However, solutions that rely only on traditional compute-intensive security mechanisms are unsuitable for resource-constrained wireless and embedded devices. In this paper, we propose a selective partial image encryption scheme for image data hiding , which enables highly efficient secure communication of image data to and from resource constrained wireless devices. The encryption scheme is invoked during the image compression process, with the encryption being performed between the quantizer and the entropy coder stages. Three data selection schemes are proposed： subband selection, data bit selection and random selection. We show that these schemes make secure communication of images feasible for constrained embed-ded devices. In addition we demonstrate how these schemes can be dynamically configured to trade-off the amount of ded devices. In addition we demonstrate how these schemes can be dynamically configured to trade-off the amount of data hiding achieved with the computation requirements imposed on the wireless devices. Experiments conducted on over 500 test images reveal that, by using our techniques, the fraction of data to be encrypted with our scheme varies between 0.0244％ and 0.39％ of the original image size. The peak signal to noise ratios (PSNR) of the encrypted image were observed to vary between about 9.5㏈ to 7.5㏈. In addition, visual test indicate that our schemes are capable of providing a high degree of data hiding with much lower computational costs.

• The Korean Journal of Petroleum Geology
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• v.6 no.1_2 s.7
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• pp.8-19
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• 1998

In the Sinri area located at the mid western boundary of the Jinan basin, the Manduksan Formation which mainly consists of coarse sandstone narrowly intercalated with shale and the alternation of sand and shale and the Dalgil Formation mainly of shale are distributed. It consists of four lithofacies, such as coarse sandstone, interbedded sandstone/shale, shale and volcanic rock lithofacies. All sediments are interpreted to be deposited by turbidity currents and free fallouts in a lacustrine basin. In these rocks many penecontemporaneous defomation structures are observed such as fold and thrust fault at large scale, and swelling, boudin structure, flame structure, load structure, ptygmatic fold and convolute bedding at small scale. All these structures are developed between upper and lower undisturbed sedimentary strata. Two large folds are similar folds, but lower one gradually developed into concentric shape. The swelling structures by convergence of the sediments are observed in the hinge area and the boudin structures are developed in the limb. The thrust faults including minor folds and sandstone lobes show duplex structure with asymmetric and kink fold on and below in front of the detached sandstone layer. Development of the swellings, boudins and lobes indicates the flexbility of the sediments during deformational episodes. The folds and thrust faults rarely contain fractures relative their scales and lithologies. This feature also indicates the retrievability of sediments during deformation. At the flanks of the thrust faults the normal faults are formed contemporaneously. The deformation structures at small scale such as flame structures, load structures, ptygmatic folds and convolute beddings are syndepositional and penecontemporaneous, which show the effects of tectonic movements. All these deformed sedimentary structures of the Sinri area suggest the continuing tectonic movements during and/or after deposition.

• Progress in Medical Physics
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• v.9 no.1
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• pp.11-21
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• 1998

Circular metal electrodes were vacuum-deposited with chromium on the both sides of Teflon-FEP and PET film characteristic of electret and the physical properties of the two polymers were observed during an irradiation by gamma-ray from $\^$60/Co. With the onset of irradiation of output 25.0 cGy/min the induced current increased rapidly for 2 sec, reached a maximum, and subsequently decreased. A steady-state induced current was reached about in 60 second. The dielectric constant and conductivity of Teflon-FEP were changed from 2.15 to 18.0 and from l${\times}$l0$\^$-17/ to 1.57${\times}$10$\^$-13/ $\Omega$-$\^$-1/cm$\^$-1/, respectively. For PET the dielectric constant was changed from 3 to 18.3 and the conductivity from 10$\^$-17/ to 1.65${\times}$10$\^$-13/ $\Omega$-$\^$-1/cm$\^$-1/. The increase of the radiation-induced steady state current I$\^$c/, permittivity $\varepsilon$ and conductivity $\sigma$ with output(4.0 cGy/min, 8.5 cGy/min, 15.6 cGy/min, 19.3 cGy/min) was observed. A series of independent measurements were also performed to evaluate reproducibility and revealed less than 1% deviation in a day and 3% deviation in a long term. Charge and current showed the dependence on the interval between measurements, the smaller the interval was, the bigger the difference between initial reading and next reading was. At least in 20 minutes of next reading reached an initial value. It may indicate that the polymers were exhibiting an electret state for a while. These results can be explained by the internal polarization associated with the production of electron-hole pairs by secondary electrons, the change of conductivity and the equilibrium due to recombination etc. Heating to the sample made the reading value increase in a short time, it may be interpreted that the internal polarization was released due to heating and it contributed the number of charge carriers to increase when the samples was again irradiated. The linearity and reproducibility of the samples with the applied voltage and absorbed dose and a large amount of charge measured per unit volume compared with the other chambers give the feasibility of a radiation detector and make it possible to reduce the volume of a detector.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.2 no.2
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• pp.125-137
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• 1997

To study the vertical variation of heavy metal and Rare Earth Element (REE) contents in deep-sea sediments, eighteen cores were sampled from the Korea Deep-sea Environmental Study (KODES)-96 area in the C-C zone (Clarion-Clipperton fracture zone), northeast equatorial Pacific. Sediment columns can be divided into three units based on sediment colors and geochemical characters; uppermost Unit I with brown color, middle Unit II with pale brown color and smaller Ni/Cu ratio than the ratio in Unit I, and lowermost Unit III with dark (brown) colors and higher contents of Mn, Ni, Cu, and REEs than those in Unit I and II. Unit II can be divided more into two layers of upper Unit IIa and lower Unit IIb. Unit IIb is characterized by high contents of Cu, 3+REEs (REEs except Ce), smectite, and severely deteriorated fossil tests. Unit III can also be divided into two units; upper Unit IIIa with dark brown color, and lower Unit IIIb with black color and enriched Mn and Fe. The KODES area was located near from the East Pacific Rise (EPR) When Unit III Sediments were deposited, considering the hiatus between Unit II and III (Quaternary-Tertiary boundary) and the spreading rate (10 cm/yr) and direction (north southern west) of the Pacific plate from the EPR. High contents of Mn and Fe in Unit IIIb may be related with hydrothermal influence from the EPR. Meanwhile, Unit IIb (about 2~3 Ma) and Unit III (11~30 Ma) layers were probably formed near (or under) the equatorial high productivity zone, and accordingly received a lot of organic materials. As a result, Cu and 3+REEs, closely associated with organic materials, are enriched in smectite and/or Ca-P composites (fish bone debrise, biogenic apatite) after decomposition and reprecipitation on the sea floor. Higher contents of Cu and 3+REEs in Unit IIb and III are suggested to be the result of abundant supply of organic substances in the equatorial high productivity zone.