• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.19 no.2
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• pp.131-146
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• 2014

High-resolution seismic profiles coupled with sediment sampling were analyzed to investigate the acoustic characters and distribution patterns of the late Holocene sediments in Gamak Bay of the South Sea, Korea. The mean grain size of surficial sediment lies around $6.3{\sim}9.7{\Phi}$. Sediments in the bay consist of silt and clay with progressive decrease toward the inner bay. The seismic sedimentary sequence overlying the acoustic basement can be divided into two sedimentary units (GB I and II) by a prominent mid-reflector (Maximum Flooding Surface; MFS). The acoustic basement occurs at the depth between 20 m and 40 m below the sea-level and deepens gradually southward. The GB I, mostly occupying the channel-fill, is characterized by reflection-free seismic facies. It can be formed as late Transgressive System Tract (TST), interpreted tidal environment deposits. MFS appears at the depth of about 15~28 m below the sea-level and is well defined by even and continuous reflectors on the seismic profile. The GB II overlying MFS is composed of acoustically transparent to semitransparent and parallel internal reflectors. GB II is interpreted as the Highstand System Tract (HST) probably deposited during the last 6,000 yrs when the sea level was close to the present level. Especially, it is though that the GB II was subdivided into two layers (GB II-a and II-b) by a HST-reflector and this was classified by wind, sea water flux, and tidal current.

• Journal of the Korean Society of Radiology
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• v.3 no.2
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• pp.27-31
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• 2009

Now a days, the Medical X-ray equipments has become digitalized from analog type such as film, cassette to CR, DR. And many scientists are still researching and developing the Medical X-ray equipment. In this study, we used the Bismuth tri-iodide to conversion material for digital X-ray equipments and we couldn't get the satisfying result than previous study, but it opened new possibility to cover the disadvantage of a-Se is high voltage aplly and difficultness of make. In this paper, we use $BiI_3$ powder(99.99%) as x-ray conversion material and make films that have thickness of 200um and the film size is $3cm{\times}3cm$. Also, we deposited an ITO(Indium Tin Oxide) electrode as top electrode and bottom electrode using a Magnetron Sputtering System. To evaluate a characteristics of the produced films, an electrical and structural properties are performed. Through a SEM analysis, we confirmed a surface and component part. And to analyze the electrical properties, darkcurrent, sensitivity and SNR(Signal to Noise Ratio) are measured. Darkcurrent is $1.6nA/cm^2$ and sensitivity is $0.629nC/cm^2$ and this study shows that the electrical properties of x-ray conversion material that made by screen printing method are similar to PVD method or better than that. This results suggest that $BiI_3$ is suitable for a replacement of a-Se because of the reduced manufacture processing and improved yield.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.42-49
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• 2011

We deposited $SiN_x$ thin films by using PECVD technique at $200^{\circ}C$ with various flow ratios of the $SiH_4/N_2$ gases. The photoluminescence measurements revealed that the maximum emission wavelength shifted to long wavelength as the ratio increased, however, positions of the several peak wavelengths, such as 1.9, 2.2, 2.4, and 3.1 eV, were independent on the ratio. Changes of the photoluminescence spectra were measured in the $N_{2}-$, $H_{2}-$, and $O_2$-annealed films. The luminescence intensities increased after the annealing process. In particular, the maximum emission wavelength shifted to short wavelength after $H_{2}-$ or $O_2$-annealing. But there were still several peaks on the spectra of all annealed films, several peak positions remained to be unchanged after the annealing. As for the light emission mechanism, we have considered the defect states of the Si- and N- dangling bonds in the $SiN_x$ energy gap, so that the energy transitions from/to the conduction/valence bands and the defect states in the gap were attributed to the light emission in the $SiN_x$ films. The experimental results point to the possibility of a Si-based light emission materials for flexible Si-based electro-optic devices.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.142-150
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• 2012

In this Study, Mo back electrode were deposited as the functions of various working pressure, deposition time and plasma per-treatment on sodalime glass (SLG) for application to CIGS thin film solar cell using by DC sputtering method, and were analyzed Mo change to $MoSe_2$ layer through selenization processes. And finally Mo back electrode characteristics were evaluated as application to CIGS device after Al/AZO/ZnO/CdS/CIGS/Mo/SLG fabrication. Mo films fabricated as a function of the working pressure from 1.3 to 4.9mTorr are that physical thickness changed to increase from 1.24 to 1.27 ${\mu}m$ and electrical characteristics of sheet resistance changed to increase from 0.195 to 0.242 ${\Omega}/sq$ as according to the higher working pressure. We could find out that Mo film have more dense in lower working pressure because positive Ar ions have higher energy in lower pressure when ions impact to Mo target, and have dominated (100) columnar structure without working pressure. Also Mo films fabricated as a function of the deposition time are that physical thickness changed to increase from 0.15 to 1.24 ${\mu}m$ and electrical characteristics of sheet resistance changed to decrease from 2.75 to 0.195 ${\Omega}/sq$ as according to the increasing of deposition time. This is reasonable because more thick metal film have better electrical characteristics. We investigated Mo change to $MoSe_2$ layer through selenization processes after Se/Mo/SLG fabrication as a function of the selenization time from 5 to 40 minutes. $MoSe_2$ thickness were changed to increase as according to the increasing of selenization time. We could find out that we have to control $MoSe_2$ thickness to get ohmic contact characteristics as controlling of proper selenization time. And we fabricated and evaluated CIGS thin film solar cell device as Al/AZO/ZnO/CdS/CIGS/Mo/SLG structures depend on Mo thickness 1.2 ${\mu}m$ and 0.6 ${\mu}m$. The efficiency of CIGS device with 0.6 ${\mu}m$ Mo thickness is batter as 9.46% because Na ion of SLG can move to CIGS layer more faster through thin Mo layer. The adhesion characteristics of Mo back electrode on SLG were improved better as plasma pre-treatment on SLG substrate before Mo deposition. And we could expect better efficiency of CIGS thin film solar cell as controlling of Mo thickness and $MoSe_2$ thickness depend on Na effect and selenization time.

• Economic and Environmental Geology
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• v.30 no.5
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• pp.417-431
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• 1997

Characteristics of sedimentary rocks and enrichment of toxic elements in shale and coal from the Chungnam coal field were investigated based upon geochemistry of major, trace and rare earth elements. Shale and coal of the area are interbedded along the Traissic to the Jurassic Daedong Supergroup, which can be subdivided into grey shale, black shale and coal. The coal had been mined, however all the mines are abandonded due to the economic problems. The shale and coal are characterized by relatively low contents of $SiO_2$, and $Al_2O_3$ and high levels of loss-on-ignition (LOI), CaO and $Na_2O$ in comparison with the North American Shale Composite (NASC). Light rare earth elements (La, Ce, Yb and Lu) are highly enriched with the coal. Ratios of $Al_2O_3/Na_2O$ and $K_2O/Na_2O$ in shale and coal range from 30.0 to 351.8 and from 4.2 to 106.8, which have partly negative correlations against $SiO_2/Al_2O_3$ (1.24 to 6.06), respectively. Those are suggested that controls of mineral compositions in shale and coal can be due to substitution and migration of those elements by diagenesis and metamorphism. Shale and coal of the area may be deposited in terrestrial basin deduced from high C/S (39 to 895) and variable composition of organic carbon (0.39 to 18.40 wt.%) and low contents of reduced sulfur (0.01 to 0.05 wt.%). These shale and coal were originated from the high grade metamorphic and/or igneous rocks, and the rare earth elements of those rocks are slightly influenced with diagenesis and metamorphism on the basis of $Al_2O_3$ versus La, La against Ce, Zr versus Yb, the ratios of La/Ce (0.38 to 0.85) and Th/U (3.6 to 14.6). Characteristics of trace and rare earth elements as Co/Th (0.07 to 0.86), La/Sc (0.31 to 11.05), Se/Th (0.28 to 1.06), V/Ni (1.14 to 3.97), Cr/V (1.4 to 28.3), Ni/Co (2.12 to 8.00) and Zr/Hf (22.6~45.1) in the shale and coal argue for inefficient mixing of the simple source lithologies during sedimentation. These rocks also show much variation in $La_N/Yb_N$ (1.36 to 21.68), Th/Yb (3.5 to 20.0) and La/Th (0.31 to 7.89), and their origin is explained by derivation from a mixture of mainly acidic igneous and metamorphic rocks. Average concentrations in the shale and coal are As=7.2 and 7.5, Ba=913 and 974, Cr=500 and 145, Cu=20 and 26, Ni=38 and 35, Pb=30 and 36, and Zn=77 and 92 ppm, respectively, which are similar to those in the NASC. Average enrichment indices for major elements in the shale (0.79) and coal (0.77) are lower than those in the NASC. In addition, average enrichment index for rare earth elements in coal (2.39) is enriched rather than the shale (1.55). On the basis of the NASC, concentrations of minor and/or environmental toxic elements in the shale and coal were depleted of all the elements examined, excepting Cr, Pb, Rb and Th. Average enrichment indices of trace and/or potentially toxic elements (As, Cr, Cu, Ni, Pb, U and Zn) are 1.23 to 1.24 for shale and 1.06 to 1.22 for coal, respectively.

• Journal of Korean Ophthalmic Optics Society
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• v.15 no.4
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• pp.361-366
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• 2010

Purpose: HCD ion plating apparatus by hollow cathod discharge method was fabricated and TiN films were deposited on stainless steel by this apparatus with increasing in $N_2$ gas flow and the fine color changes of TiN films were analyzed. Methods: The spectroradiometer and spectrophotometer were used to observe optically the fine color changes of TiN thin films, and XPS was used to analyze the compositions of TiN thin films with increasing in $N_2$ gas flow. Results: The color coordinate of TiN thin film with $N_2$ 120 sccm gas flow showed (0.382, 0.372) which had the mixed colors of gold and silver, and the color coordinate changed to the increasing value of (x,y) with increasing in $N_2$ gas flow which indicated the deep gold color. It was found that the slopes of the reflectances at 550nm were increased with increasing in $N_2$ gas flow. And from the Ti scans using XPS, it was found that the peak heights of 455 eV derived from TiN composition were increased with increasing in $N_2$ gas flow, while the peak heights of 459 eV from $TiO_2$ composition were decreased. Conclusions: The results obtained above were that the color of TiN film with 120 sccm $N_2$ gas flow had been observed from the mixed color of silver and gold due to TiC, $N_2$, TiN on the surface and TiN, $N_2$ inside film, and the color of TiN films changed a deep gold color with increasing in $N_2$ gas flow due to increasing TiN composition.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.12
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• pp.2263-2273
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• 2000

Catalytic wet air oxidation of acetic acid over Mn-Ce based catalysts deposited on various supports ($SiO_2$, $TiO_2$, $ZrO_2$), $ZrSiO_4$, $ZrO_2(10wt%)/TiO_2$) have been carried out in high pressure microreactors. Also, promotional effects by small addition(O.5~1.0 wt%) of p-type semiconductors (CoO, $Ag_2O$, SnO) have been investigated. From the screening tests for initial activity ranking, both Mn(2.8)-Ce(7.2 wt%) and Ru(O.4)Mn(2.7)-Ce(6.9 wt%) supported on $TiO_2$ were selected as the promising reference candidates. In $Mn-Ce/TiO_2$ reference catalyst, addition of small amount of each p-type semiconductor (Co, Sn and Ag) resulted in activity promotional effect and the degree of the increase was in the following order: Co> Ag > Sn. Especially, $Mn-Ce/TiO_2$ promoted with 0.5 wt% Co gave the 2.6 folds activity increase compared to the reference case attributing to the surface area increase as well as synergy effect. In $Ru-Mn-Ce/TiO_2$ reference catalyst, only Co(1.0 wt%) promoted case showed a little reaction rate increase.

• Elastomers and Composites
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• v.46 no.4
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• pp.277-283
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• 2011

In this study, engineering grade and high intensity reflective sheets were prepared with glass beads and their reflection performance and physical properties were investigated. The reflective sheets prepared by using glass beads are divided into enclosed or encapsulated lens type, depending on whether the glass beads are open in air or not. Because of an extra layer on the glass bead surface, the enclosed lens type reflective sheets show very little change in the properties by bad weather conditions, compared to encapsulated lens type reflective sheets. Optimization of the amount of glass beads on the surface was carried out, which determines the retroreflective properties. Enclosed and encapsulated lens type reflective sheets with various colors were prepared and their coefficients of retroreflection were determined. The encapsulated type reflective sheet with white color shows a coefficient of retroreflection of $210.4cd/1x{\cdot}m^2$, which is higher than the enclosed type ($74cd/1x{\cdot}m^2$). Effect of washing on the reflective property and adhesive power of the reflective sheets was investigated, and it is found that the number of glass beads decreased with washing and the aluminum layer deposited was damaged extensively in the encapsulated lens type reflective sheets.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.621-627
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• 1998

The formation of Co-silicide between Co/Zr bilayer on the amorphous and crystalline Si substrates has been investigated. The films of Zr(50$\AA$) and Co(l50$\AA$) were deposited with e-beam evaporation system and were heattreated with the rapid thermal annealing system at the temperatures between 50$0^{\circ}C$ and 80$0^{\circ}C$ with 10$0^{\circ}C$ increments for 30 seconds. The phase identification of Co-silicide was carried out by XRD and the chemical analysis was examined by AES and RBS. The interface morphologies of Co/Zr bilayer films were investigated by cross sectional TEM and HRTEM. $CoSi_2$ was formed epitaxially on the crystalline Si substrate above $700^{\circ}C$ while polycrystalline $CoSi_2$ was grown on the amorphous Si substrate. The formation temperature of Co-silicide on the amorphous Si substrate was about 100 C lower than that on the crystalline Si. The COzSi phase was not identified on the both Si substrates. The formation temperature of first phase of Co-silicide on ColZr bilayer was higher than that on Co mono layer. CoSizlayer formed on the amorphous Si substrate exhibits better uniformity compared to the CoSiz formed on the crystalline substrate. The sheet resistance of CoSiz layer on crystalline Si was lower than that on the amorphous Si at high temperatures.tures.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.395-403
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• 2006

It is known that $MgAl_2O_4$ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of $MgAl_2O_4$ and $MgAl_2O_4/MgO$ layers as dielectric protection layers for AC- PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and $MgAl_2O_4$ films both with a thickness of $1000\AA$ and $MgAl_2O_4/MgO$ film with a thickness of $200/800\AA$ were grown on the Cu substrates using the electron beam evaporation. $1000\AA$ thick aluminium layers were deposited on the protective layers in order to avoid the charging effect of $Ga^+$ ion beam while the focused ion beam(FIB) is being used. We obtained sputtering yieds for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found th show $24{\sim}30%$ lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated $Ga^+$ ion beam with energies ranged from 10 kV to 14 kV. And $MgAl_2O_4$ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the ${\gamma}$- FIB. $MgAl_2O_4/MgO$ and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated $Ne^+$ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and $MgAl_2O_4/MgO$ protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that $MgAl_2O_4/MgO$ protective layer has superior hardness and degradation resistance properties to MgO protective layer.