• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.226-227
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• 2005

The carbon film was deposited by the electrolysis of methanol solution. From investigations of the Raman spectroscopy and the FTIR spectroscopy, the carbon film deposited by the electrolysis was identified the hydrogenated carbon film with the porous structure. The carbon film deposited by electrolysis of methanol was identified as the hydrogenated carbon film with porous structure.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.49.2-49.2
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• 2010

Copper oxide films have been deposited on silicon substrates by direct current magnetron sputtering of Cu in O2 / Ar gas mixtures. The target oxidation occurring as a result of either adsorption or ion-plating of reactive gases to the target has a direct effect on the discharge current and the resulting composition of the deposited films. The kinetic model which relates the target oxidation to the discharge current was proposed, showing the one-to-one relationship between discharge current characteristics and film stoichiometry of the deposited films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.346-347
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• 2005

The carbon film was deposited by the electrolysis of methanol solution. From investigations of the Raman spectroscopy and the FTIR spectroscopy, the carbon film deposited by the electrolysis was identified the hydrogenated carbon film with the porous structure. The carbon film deposited by electrolysis of methanol was identified as the hydrogenated carbon film with porous structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.82-85
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• 1988

In the present study, we have investigated a novel photothermal imaging technique in $80^{\circ}$ deposited Ge Se film which do not utilize silver and deposited a-$Ge_{25}Se_{75}$ films was measured with the exposure time and annealing time. The results showed that the maximum changing rate of thickness was 3% in exposured film and 14% in postexposure annealing film.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1503-1505
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• 2000

To grow the diamond films by using RF-MW mix-process, at first, diamond seeds were deposited on silicon substrate by RF plasma CVD, and then a diamond layer grown by MW plasma CVD on the seeds. The grain-size of diamond films deposited by using HF-MW mix-process was smaller and denser than those of the MW plasma CVD process. The deposited diamond films were analyzed by scanning electron microscophy, X-ray diffractometer and Raman spectroscopy.

• Transactions on Electrical and Electronic Materials
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• v.9 no.6
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• pp.231-236
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• 2008

B, P, and Cs ions were implanted with various parameters into silicon nitride layers prepared by LPCVD. In order to get the maximum impurity concentration at the silicon nitride surface, a high temperature oxide (HTO) buffer layers was deposited prior to the implantation. Alkali ion and pH sensing properties of the layers were investigated with an electrolyte-insulator-silicon (EIS) structure using high frequency capacitance-voltage (HF-CV) measurements. The ion sensing properties of implanted silicon nitrides were compared to those of as-deposited silicon nitride. Band Cs co-implanted silicon nitrides showed a pronounced difference in pH and alkali ion sensing properties compared to those of as-deposited silicon nitride. B or P implanted silicon nitrides in contrast showed similar ion sensitivities like those of as-deposited silicon nitride.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.3
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• pp.13-18
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• 1999

Diamond film was deposited on Si wafer using $\textrm{H}_2$ and $\textrm{CH}_4$ mixed gas by RF PACVD. Prior to deposition, mechanical scratching was done to improve density of nucleation sites with diamond paste of $1\mu\textrm{m}$ The microstructure of deposited film was studied at various methane concentrations. The deposited film was characterized by XRD(X-tay diffraction), SEM(Scanning Electron Microscopy) and Raman Spectroscopy The deposited diamond film showed that the crystallite was increased at the lower methane concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.321-322
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• 2009

Al doped ZnO films deposited on glass substrate using RF magnetron sputtering in Ar and $Ar+H_2$ gas ambient at $100^{\circ}C$. The films deposited in $Ar+H_2$ were hydrogen-annealed at the temperature of $150\sim300^{\circ}C$ for 1hr. The lowest resistivity of $4.25\times10^{-4}{\Omega}cm$ was obtained for the AZO film deposited in $Ar+H_2$ after hydrogen annealing at $300^{\circ}C$ for 1hr. The average transmittance is above 85% in the range of 400-1000 nm for all films. The absorption efficiency of solar cell was improved by using the optimized AZO films as a top electrode.

• Journal of the Korean institute of surface engineering
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• v.35 no.3
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• pp.165-171
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• 2002

TiN coating were deposited onto different WC-Co substrates using arc ion plating (AIP) technique. The structure and morphology for the deposited coating were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). The adhesion behavior of the deposited TiN coating was investigated with a conventional scratch test. Effects of WC particle size and Co content on the adhesion strength between the deposited TiN coating and substrate were studied. During the scratch test, the value of critical load was dependent of WC particle size and Co content on substrate. As the WC particle size and Co content on substrate decreased, the critical load increased. The highest critical load, approximately 110N, was obtained at WC particle size of 1$\mu\textrm{m}$ and Co content of 10wt.%.

• Journal of the Korean Ceramic Society
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• v.26 no.5
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• pp.670-676
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• 1989

The PbTiO3 is well known materials having remarkable ferroelectric, piezoelectric, and pyroelectric properties. PbTiO3 thin films with a perovskite structure were successfully fabricated on titanium substrate by chemical vapor deposition. These films were characterized according to composition, crystal structure, and electrical properties. Semi-quantitative compositional analysis of the deposited films was made by Auger Electron Spectroscopy(AES). The PbTiO3 film deposited on titanium substrate at the deposition temperature 75$0^{\circ}C$, the Ti(C2H5O)4 fraction 0.15, and O2 partial pressure 0.06atm, has a columnar structure and grows with(001) preferred orientation, and has stoichiometric composition. A clear dielectric transition and offset in the dc conductivity near the transition temperature(48$0^{\circ}C$) were observed in the deposited lead titanate film.