• 대한기계학회논문집B
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• 제22권3호
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• pp.399-407
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• 1998

The infrared reflection coatings with pigment can be used to protect the surfaces of combustible materials exposed to fire. To obtain high reflectivities in the infrared range (0.5-10.mu.m) important to fire, several dielectric pigments, such as titanium dioxide, iron oxide, and silicon, can be synthesized to polymer coatings. The theoretical analysis shows that the coating design with particles diameter in the 1.5 to 2.5.mu.m range and volume fraction in the 0.1 to 0.2 range is estimated to be optimal. In the analysis of the radiation, the dependent scattering, absorption by polymeric binder, and the internal interface reflection are considered. In addition, the temperature distribution in the semi-transparent coating layer and an opaque substrate (PMMA) is also presented.

• 대한화학회지
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• 제57권2호
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• pp.172-175
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• 2013

We compare the relative usefulness of common basis functions and numerical integration methods in representing complex resonance state encountered in the molecular scattering problem of aluminum dimer electronic predissociation. Specifically, the basis set size and computing CPU times are monitored in order to find the minimum requirement for ensuring the modest accuracy of calculated resonance energies (0.1 $cm^{-1}$) for more than 100 resonance states. The combination of the so-called one-dimensional box eigenfunctions and energy-dependent boundary functions are found to be most efficient if integration is done using the basis set quadrature rules.

• 한국방사선학회논문지
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• 제3권3호
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• pp.23-25
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• 2009

Gd-157 material has very large neutron capture cross section in the thermal region. So it is very useful to shield material for thermal neutrons. Futhermore, in the neutron capture experiment and calculation, the neutron absorption and scattering are very important. Especially these effects are conspicuous in the resonance energy region and below the thermal energy region. In the case of very narrow resonance, the effect of scattering is to be more considerable factor. In the present study, we obtained energy dependent neutron absorption ratios of natural indium in energy region from 0.003 to 100 keV by MCNP-4B Code. The coefficients for neutron absorption was calculated for circular type and 1 mm thickness. In the lower energy region, neutron absorption is larger than higher region, because of large capture cross section (1/v). Furthermore it seems very different neutron absorption in the large resonance energy region. These results are very useful to decide the thickness of sample and shielding materials.

• Macromolecular Research
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• 제14권1호
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• pp.45-51
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• 2006

We conducted simultaneous, small-angle, X-ray scattering/differential scanning calorimetry (SAXS/DSC) and simultaneous, wide-angle, X-ray scattering (WAXS)/DSC measurements for a polymer blend of poly($\varepsilon$-caprolactone)/poly(ethylene glycol)(PCL/PEG). The time-dependent SAXS/DSC and WAXS/DSC results, measured while the system was quenched below the melting temperature of PCL from a melting state, revealed the competitive behavior between liquid-liquid phase separation and crystallization in the polymer blend. The time-dependent structural evolution extracted from the SAXS/WAXS/DSC results can be characterized by the following four stages in the PCL crystallization process: the induction (I), nucleation (II), growth (III), and late (IV) stages. The influence of the liquid-liquid phase separation on the crystallization of PCL was also observed by phase-contrast microscope and polarized microscope with 1/4$\lambda$ compensator.

• 대한의용생체공학회:의공학회지
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• 제28권2호
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• pp.169-173
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• 2007

During laser irradiation, mechanically deformed cartilage undergoes a temperature dependent phase transformation resulting in accelerated stress relaxation. Clinically, laser-assisted cartilage reshaping may be used to recreate the underlying cartilaginous framework in structures such as ear, larynx, trachea, and nose. Therefore, research and identification of the biophysical transformations in cartilage accompanying laser heating are valuable to identify critical laser dosimetry and phase transformation of cartilage for many clinical applications. quasi-elastic light scattering was investigated using Ho : YAG laser $(\lambda=2.12{\mu}m\;;\;t_p\sim450{\mu}s)$ and Nd:YAG Laser $(\lambda=1.32{\mu}m\;;\;t_p\sim700{\mu}s)$ for heating sources and He : Ne $(\lambda=632.8nm)$ laser, high-power diode pumped laser $(\lambda=532nm)$, and Ti : $Al_2O_3$ femtosecond laser $(\lambda=850nm)$ for light scattering sources. A spectrometer and infrared radiometric sensor were used to monitor the backscattered light spectrum and transient temperature changes from cartilage following laser irradiation. Analysis of the optical, thermal, and quasi-elastic light scattering properties may indicate internal dynamics of proteoglycan movement within the cartilage framework during laser irradiation.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.97-97
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• 2013

We present a comprehensive study on the integration of h-BN with silicon MOSFET. Temperature dependent mobility modeling is used to discern the effects of top-gate dielectric on carrier transport and identify limiting factors of the system. The result indicates that coulomb scattering and surface roughness scattering are the dominant scattering mechanisms for silicon MOSFETs at relatively low temperature. Interposing a layer of h-BN between $SiO_2$ and Si effectively weakens coulomb scattering by separating carriers in the silicon inversion layer from the charged centers as 2-dimensional h-BN is relatively inert and is expected to be free of dangling bonds or surface charge traps owing to the strong, in-plane, ionic bonding of the planar hexagonal lattice structure, thus leading to a significant improvement in mobility relative to undecorated system. Furthermore, the atomically planar surface of h-BN also suppresses surface roughness scattering in this Si MOSFET system, resulting in a monotonously increasing mobility curve along with gate voltage, which is different from the traditional one with a extremum in a certain voltage. Alternatively, high-k dielectrics can lead to enhanced transport properties through dielectric screening. Modeling indicates that we can achieve even higher mobility by using h-BN decorated $HfO_2$ as gate dielectric in silicon MOSFETs instead of h-BN decorated $SiO_2$.

• Nuclear Engineering and Technology
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• 제56권5호
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• pp.1553-1561
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• 2024

Nondestructive radiography using cosmic ray muons has been used for decades to monitor nuclear reactor and spent nuclear fuel storage. Because nuclear fuel assemblies are highly dense and large, typical radiation probes such as x-rays cannot penetrate these target imaging objects. Although cosmic ray muons are highly penetrative for nuclear fuels as a result of their relatively high energy, the wide application of muon tomography is limited because of naturally low cosmic ray muon flux. This work presents a new image reconstruction algorithm to maximize the utility of cosmic ray muon in tomography applications. Muon momentum information is used to improve imaging resolution, as well as muon scattering angle. In this work, a new convolution was introduced known as M-value, which is a mathematical integration of two measured quantities: scattering angle and momentum. It captures the objects' quantity and density in a way that is easy to use with image reconstruction algorithms. The results demonstrate how to reconstruct images when muon momentum measurements are included in a typical muon scattering tomography algorithm. Using M-value improves muon tomography image resolution by replacing the scattering angle value without increasing computation costs. This new algorithm is projected to be a standard nondestructive radiography technique for spent nuclear fuel and nuclear material management.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.236.2-236.2
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• 2007

• Journal of Radiation Protection and Research
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• 제22권1호
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• pp.29-33
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• 1997

중성자교정실내에서 $D_2O$ 감속 $^{252}Cf$중성자선원을 사용하여 계측기를 교정할 때는 그 계측기에 대한 교정실산란보정 인자를 미리 결정하여야 한다. 이러한 교정실산란보정인자는 계측기의 종류, 교정거리, 교정실형태에 따라 다르게 결정된다. 본 연구에서는 한국원자력연구소에서 운영하는 2차 표준중성자교정실에서 한가지의 열형광선량계와 2가지의 구형검출기에 대한 교정실산란보정인자를 실험적으로 결정하였고 본소의 2차 표준중성자교정실조건에 의하여 이론적으로 예측한 값과 비교하였다. 비교한 결과 실험하여 얻어진 상기의 3가지 계측기에 대한 교정실산란보정인자가 이론적으로 예측한 결과와 최대 약 10% 이내에서 일치하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.191.2-191.2
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• 2015

Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.