• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.8
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• pp.934-941
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• 2012

This paper has examined the concept of dependence of spectrum to foresight on future wireless industry. For this, we classified the wireless industry and had a survey on the dependence of spectrum of the wireless industry by experts interview. We had foresighted the trend and changes of future market of wireless industry using survey data. We also had analyzed on factors of growth and level of development of wireless industry.

• The Bulletin of The Korean Astronomical Society
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• v.44 no.2
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• pp.58.3-58.3
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• 2019

We discuss theoretical motivations for deviations from standard power-law primordial power spectrum and possible mechanism to provide non-trivial scale dependence for the primordial power spectrum.

• Proceedings of the Korea Institute of Convergence Signal Processing
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• 2000.08a
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• pp.13-16
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• 2000

Since stimulated Brillouin scattering (SBS) impact wavelength division multiplexing (WDM) optical transmission systems, it is important to understand the implication of SBS in the design of such lightwave systems. Therefore, Brillouin gain spectrum (BGS) is measured to characterize the effect of SBS in optical fiber. The Brillouin gain coefficient is found to vary as the wavelength and linewidth of source. Theoretically measurement of BGS shows a dependence on wavelength(λ) and on linewidth(Δν), respectively.

• Journal of the Optical Society of Korea
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• v.6 no.1
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• pp.1-4
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• 2002

We studied experimentally the angular spectrum of the light emitted from dye Molecules near a plane boundary. It is confirmed that the molecules near the boundary can emit light into the evanescent wave mode, and the light emission with the angle greater than the critical angle is detected with good accuracy. The angular spectrum of the spontaneous radiation is measured, and the spectrum shows contributions from the molecules both near and far away from the boundary. The polarization dependence and the pumping angle dependence are also measured. The experimental results are in good agreement with quantum theory.

• Korean Journal of Optics and Photonics
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• v.6 no.4
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• pp.302-309
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• 1995

We desinged a lattice-matched InGaAs/lnGaAsP quantum well laser that lases at $1.55{\mu}m$ at room temperature, and calculated the gain spectrum as a function of injected carrier density and temperature. For the calculation of band structures and momentum matrix elements, we used a transfer JIlatrix method based on a block-diagonalized 8x8 second-order Ii$.$ P Hamiltonian. This lattice-matched quantum well lases in transverse electric mode. As the temperature increases, the lasing wavelength gets longer, the transparency carrier density increases, and the differential gain is reduced. The temperature dependence of the gain spectrum comes from the temperature dependence of the band structure and that of the Fermi function, and the latter contributes dominantly.nantly.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.14-14
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• 2011

Graphene is known to possess excellent thermal properties, including high thermal conductivity, that make it a prime candidate material for heat management in ultra large scale integrated circuits. For device applications, the key parameters are the thermal expansion coefficient and the thermal conductivity. There has been no reliable experimental determination on the thermal expansion coefficient of graphene whereas the estimates of the thermal conductivity vary widely. In this work, we estimate the thermal expansion coefficient of graphene on silicon dioxide by measuring the temperature dependence of the Raman spectrum. The shift of the Raman peaks due to heating or cooling results from both the intrinsic temperature dependence of the Raman spectrum of graphene and the strain on the graphene film due to the thermal expansion mismatch with silicon dioxide. By carefully comparing the experimental data against theoretical calculations, it is possible to determine the thermal expansion coefficient. The thermal conductivity is measured by estimating the thermal profile of a graphene film suspended over a circular hole of the substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.123-124
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• 2007

A silver indium sulfide ($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the liteniture. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The temperature dependence of the energy band gap of the $AgInS_2$ obtained from the photocurrent spectrum was well described by the Varshni's relation, $E_g(T)=\;E_g(0)\;eV-(7.78\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;116\;K\;K)$. Also, Eg(0) is the energy band gap at 0 K, which is estimated to be 2.036 eV at the valence band state A and 2.186 eV at the valence band state B.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.57.1-57.1
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• 2007

• Publications of The Korean Astronomical Society
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• v.12 no.1
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• pp.149-157
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• 1997

The collision model of the disk, based on collisions between the particles in the disk, is summarized. The dependence of disk stability on the collision of the particles is demonstrated. The energy spectrum produced in the disk is numerically calculated. We concluded that the results are not largely different from those of the standard disk model. It implies that the collision of the particles inside the disk may be considered here.

• Journal of the Optical Society of Korea
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• v.19 no.3
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• pp.311-316
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• 2015

We investigate the temperature dependence of the phosphor conversion efficiency (PCE) of the phosphor material used in a white light-emitting diode (LED) consisting of a blue LED chip and yellow phosphor. The temperature dependence of the wall-plug efficiency (WPE) of the blue LED chip and the PCE of phosphor are separately determined by analyzing the measured spectrum of the white LED sample. As the ambient temperature increases from 20 to $80^{\circ}C$, WPE and PCE decrease by about 4.5% and 6%, respectively, which means that the contribution of the phosphor to the thermal characteristics of white LEDs can be more important than that of the blue LED chip. When PCE is decomposed into the Stokes-shift efficiency and the phosphor quantum efficiency (QE), it is found that the Stokes-shift efficiency is only weakly dependent on temperature, while the QE decreases rapidly with temperature. From 20 to $80^{\circ}C$ the phosphor QE decreases by about 7% while the Stokes-shift efficiency changes by less than 1%.