Dry Etching Characteristics of GaN using a Magnetized Inductively Coupled $CH_4/H_2/Ar$ Plassma
(자화 유도 결합형 $CH_4/H_2/Ar$ 플라즈마를 이용한 GaN 건식 식각 특성)
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- The Transactions of the Korean Institute of Electrical Engineers C
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- v.49 no.4
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- pp.203-209
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- 2000