• Journal of Acupuncture Research
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• v.17 no.4
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• pp.79-87
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• 2000

Objectives : To evaluate the findings useful for differential diagnosis and associated abnormaiities of isthmic spondylolisthesis and degenerative spondylolisthesis on CT. Materials and methods : We reviewed retrospectively the CT images of 65 patients who were diagnosed spondylolisthesis during 3 years period. Our technique was 5mm slices at 5mm intervals with gantry angle to parallel the interspaces. Also reformatted sagittal views were taken. 41 patients were isthmic spondylolisthesis and 24 patients were degenerative spondylolisthesis. Resuits : Isthmic spondylolisthesis. 1. Isthmic type was more common at L5-S1. 2. The degree of anterior displacement was grade I and II. 3. The plane of defect was more horizontal than the usual facet joint. 4. The defect had an irregular shape. 5. Medial aspect of bone just anterior to defect had a small round prominence. 6. Anteroposterior elongation of the spinal canal was common. 7. Pseudobulging disk was common. 8. The most common associated abnormality was a HNP at the upper level of the defect. Degenerative spondylolisthesis. 1. Degenerative type was more common at L4-5. 2. The degree of anterior disptacement was grade I and II. 3. The Plane of facet joint was oriented obliquely instead of horizontally. 4. The posterior facet(inferior facet of superior vertebra) was anteriorly displaced. 5. Bony spur of the posterior portion of anterior facet was seen. 6. The facet joints often contain gas(vaccum phenomenum). 7. The most common associated abnormality was a HNP at the level of the displacement. Conclusions : CT is a highly accurate and most sensitive technique for recognition, differential diagnosis of isthmic and degenerative types and the detection of associated abnormalities.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.314-314
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• 2012

The dilute magnetic semiconductors (DMS) have been developed to multi-functional electro-magnetic devices. Specially, the Si based DMS formed by ion implantation have strong advantages to improve magnetic properties because of the controllable effects of carrier concentration on ferromagnetism. In this study, we investigated the deep level states of Fe- and Co-ions implanted Si wafer during rapid thermal annealing (RTA) process. The p-type Si (100) wafers with hole concentration of $1{\times}10^{16}cm^{-3}$ were uniformly implanted by Fe and Co ions at a dose of $1{\times}10^{16}cm^{-2}$ with an energy of 60 keV. After RTA process at temperature ranges of $500{\sim}900^{\circ}C$ for 5 min in nitrogen ambient, the Au electrodes with thickness of 100 nm were deposited to fabricate a Schottky contact by thermal evaporator. The surface morphology, the crystal structure, and the defect state for Fe- and Co- ion implanted p-type Si wafers were investigated by an atomic force microscopy, a x-ray diffraction, and a deep level transient spectroscopy, respectively. Finally, we will discuss the physical relationship between the electrical properties and the variation of defect states for Fe- and Co-ions implanted Si wafer after RTA.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.831-836
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• 2014

One-dimensional (1D) photonic crystals (PCs) were prepared by $TeO_x(2<x<3)/SiO_2$ with the difference refractive index, and fabricated by sputtering technique from a $TeO_2$ and $SiO_2$ target. The $TeO_x$(2$Ar:O_2=40:10$). A 10-pair $TeO_x(2<x<3)/SiO_2$ 1D PCs were fabricated with the structure parameters of filling factor=0.5185, and period=410 nm. The properties of 1D PCs with and without a defect layer were evaluated by UV-VIS-NIR. A normal mode 1D PC have a photonic band gap (PBG) in the near infrared (NIR) region from 1,203 to 1,421 nm. In the case of 1D PC containing a defect layer, a defect level appears at 1,291 nm. The measured transmittance (T) spectra are nearly corresponding to calculated results. After He-Cd laser exposure, the defect level is shifted from 1,291 nm to 1,304 nm.

• Journal of Internet of Things and Convergence
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• v.9 no.3
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• pp.81-86
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• 2023

SSD (solid state disk), which is flash memory-based storage device, has the advantages of high density and fast data processing. Therefore, it is being utilized as a storage device for high-capacity data storage systems that manage rapidly increasing big data. However, flash memory, a storage media, has a physical limitation that when the write/erase operation is repeated more than a certain number of times, the cells are worn out and can no longer be used. In this paper, we propose a method for converting defective multi-bit cells into single-bit cells to reduce the defect rate of flash memory and extend its lifetime. The proposed idea distinguishes the defects and treatment methods of multi-bit cells and single-bit cells, which have different physical characteristics but are treated as the same defect, and converts the expected defective multi-bit cells into single-bit cells to improve the defect rate and extend the overall lifetime. Finally, we demonstrate the effectiveness of our proposed idea by measuring the increased lifetime of SSD through simulations.

• Bulletin of the Society of Naval Architects of Korea
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• v.21 no.1
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• pp.35-42
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• 1984

In the present study, rotating bending fatigue tests have been carried out in three kinds of carbon steel specimens; an annealed low carbon steel, an annealed high carbon steel and quenched-tempered high carbon steel; with a small artificial surface defect that might exist in real structures. Fatigue crack lengths have been observed by a method of replication in order to investigate the growth characteristic of fatigue crack in the viewpoints of strength of materials and fracture mechanics. The main results obtained are as follows: 1) The effect of a small surface defect upon the reduction of fatigue limit is considerably large, and the rate of fatigue limit reduction grows in the following order; annealed low carbon steel(mild steel), annealed high carbon steel, quenched-tempered high carbon steel. 2) When the growth rate of surface crack length(2a) was investigated in the viewpoints of fracture mechanics based upon $ ${\Delta}K_{\varepsilon}$, the dependence of stress level and of surface defect size disappear, and there exists a linear relationships between d(2a)/dN and ${\Delta}K_{{\varepsilon}t},\;\Delta_{{\varepsilon}t}\sqrt{{\pi}a}$, on log. plot, i.e, $d(2a)/dN={C{\cdot}{\Delta}K_{\varepsilon}}^3_t$, where ${\Delta}_{{\varepsilon}t}\sqrt{{\pi}a}$ a is the cyclic total strain intensity factor range.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.6 no.1
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• pp.45-50
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• 1997

It is not clearly known how surface defects or inclusions of a medium carbon steel affect a fatigue strength. In this study, we used SM35C specimens with spheroidized cementite structure to eliminate dependence of micro structure of fatigue crack. The investigation was carried out by behavior of crack closure at non-propagation crack and effect of the fatigue limit according to the artificial defects size. Experimental findings are obtained as follows : (1) Fatigue crack initiation point of medium carbon steel with spheroidized cementite structure is at the surface defects. (2) Non-propagating crack length of smooth specimen is equal to the critical size of defect. (3) Considering the opening and closure behavior of fatigue crack, the defect shape results in various crack opening displacement, while it does not affects the fatigue limit level of medium carbon steel with spheroidized cementite structure. (4) The critical length of the non-propagation crack of smooth specimen is the same as critical size of defect in transient area which determines threshold condition in steel with spheroidized cementite structure.

• Journal of Korea Technology Innovation Society
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• v.5 no.2
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• pp.245-256
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• 2002

Measurement standards, as being widely recognized, is necessary for national economic development and advanced industrialization. Also measurement standards give reliability and fair trade to the producers and consumers. Macro-effect of measurement standards using estimation of cost function has four effects: 1) value-added causing effect, 2) effect of employment, 3) reduction effect transaction cost, 4) reduction effect defect rates. In this study, to investigate the impacts between specific and the other industries, we used I-O Table of Korea Bank. The relation between the value-added produced by original production factors and final use is determined through production level, and the relation can be investigated with production causing coefficient matrix. In this study, it was showed that the measurement standards investments including measurement only man power of industries were increased from 1995 rapidly. The establishment and maintenance of measurement standards contributes to reduce the defect rate of products in production process and improve the confidence of the product quality. The results from this study show that measurement technology contributes to improve quality, decrease defect rate, improve production process, develope new products, reduce prime cost and increase the consumer's confidence on the firms. Since these results indicate that measurement standards are very important in the point of their vast contribution, we hope our findings can contribute to encourage measurement activities in industries.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.5
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• pp.32-44
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• 1997

A three-dimensional (3D) full-dynamic damage model for ion implantation in crystalline silicon was proposed to calculate more accurately point defect distributions and ion-implanted concentration profiles during ion implantation process. The developed model was based on the physical monte carlo approach. This model was applied to simulate B and BF2 implantation. We compared our results for damage distributions with those of the analytical kinchin-pease approach. In our result, the point defect distributions obtained by our new model are less than those of kinchin-pease approach, and the vacancy distributions differ from the interstitial distributions. The vacancy concentrations are higher than the interstitial ones before 0.8 . Rp to the silicon surface, and after the 0.8 . Rp to the silicon bulk, the interstitial concentrations are revesrsely higher than the vacancy ones.The fully-dynamic damage model for the accumulative damage during ion implantation follows all of the trajectories of both ions and recoiled silicons and, concurrently, the cumulative damage effect on the ions and the recoiled silicons are considered dynamically by introducing the distributon probability of the point defect. In addition, the self-annealing effect of the vacancy-interstitial recombination during ion implantation at room temperature is considered, which resulted in the saturation level for the damage distribution.

• Journal of Ocean Engineering and Technology
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• v.10 no.1
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• pp.53-64
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• 1996

In this paper, rotating bending fatigue tests have been carried out to investigate the growth behabiors of surface fatigue crack initiated from a small artificial surface defect, that might exist in real structures, on 2024-T3 and 6:4 brass. The test results are analysed in the viewpoints of both strength of materials and fracture mechanics, it can be concluded as follows. The effect of a small artificial surface defect upon the fatigue strength is very large. The sensitivity of 2024-T3 on the defect is higher than that of 6:4 brass. The growth behavior of the surface fatigue crack of 2024-T3 is different from that of 6:4 brass. The growth rate of the surface fatigue crack of 2024-T3 is considerably rapid in the early stage of the fatigue life and apt to decrease in the later stage. It was impossible to establish a unifying approach in the analysis of crack growth begabior of 2024-T3 and 6:4 brass using the maximum stress intensity factor because of their dependence on stress level. But if the elastic strain and cyclic total strain intensity factor range were applied to obtain the growth rate of surface fatigue cracks of the materials, the data were found to be nearly coincided.

• The Journal of the Korean dental association
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• v.49 no.9
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• pp.520-526
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• 2011

Vascularized iliac crest flap include bone tissue of good quality and quantity for mandible segmental defect. Even if fibular flap can contain longer bone tissue, iliac crest has esthetic shape for mandible body reconstruction and large height for implant. Conventional vascularized iliac crest osteomyocutaneous flap is too bulky for reconstruction of intraoral soft tissue defect. But modified flap can reduce soft tissue volume, so is good for functional reconstruction of oral mucosa. It takes only one month for completely replace oral mucosa. The final mucosal texture is much better than other skin paddle flap, especially for implant prosthesis. Donor site morbidity of this method looks same level or less with other modalities functionally and socially. In case of oral mucosa-mandible combined defect, vascularized iliac crest with internal oblique muscle flap shows good outcomes for hard and soft tissue.