• Journal of Ocean Engineering and Technology
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• v.18 no.5
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• pp.43-49
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• 2004

The lightness of components required in the automobile and machine industry necessitates the use of high strength components. In particular, the fatigue failure phenomena, which occurs when using metal, increases the danger to human life and property. Therefore, antifatigue failure technology is an integral part of current industries. Currently, the shot peening is used for removing the defect from the surface of steel, while improving the fatigue strength on surface. Therefore, in this paper, the effect of compressive residual stress of spring steel(JISG SUP-9) by shot-peening on fatigue crack growth characteristics in a stress ratio(R=0.1, R=0.3, R=0.6) was investigated, giving consideration to fracture mechanics. By using the methods mentioned above, following conclusions are drawn: (1) The fatigue crack growth rate(da/dN) of the shot-peening material was lower than that of the un-peening material and in stage I, ΔKth, the threshold stress intensity factor of the shot-peen processed material is high in critical parts, unlike the un-peening material. Also m, fatigue crack growth exponent and number of cycle of the shot-peening material, was higher than that of the un-peening material, as concluded from effect of da/dN. (2) Fatigue life shows more improvement in the shot-peening material than in the un-peening material, and the compressive residual stress of surface on the shot-peen processed operate resistance of fatigue crack propagation.

• Journal of the Korean Ceramic Society
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• v.35 no.2
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• pp.172-179
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• 1998

Valve lifter namely tappet is supported by lifter hole which is located upper side of camshaft in cylinder block transforms rotatic mvement of camshaft into linear movement and helps to open and shut the en-gine valve as an engine parts. The face of valve lifter which is continuously contacting with camshaft brings about abnormal wears such as unfair wear and early wear because it is severely loaded in the valve train system. These wears act as a defect like over-clearance and cause imperfect combustion of fuel during the valve lifting in the combustion chamber. Consequently this imperfect combustion makes the engine out-put decrease and has cause on air pollution. To prevent these wears therefore The valve lifter cast in me-tal developed into SiC ceramics valve lifter which has an excellence in wear and impact resistance As a results the optimum process conditions like injection condition mixture ratio and debonding process could be established. After sintering fine-sinered dual microstructure in which prior ${\alpha}$-SiC matches well with new SiC(${\beta}$-SiC) produced by reaction among the ${\alpha}$-SiC carbon and silicon was obtained. Based on the study it is verified that mechanical properties of SiC valve lifter are excellent in Vickers hardness 1100-1200 bending strength (300-350 Pa) fracture toughness(1.5-1.7 Mpa$.$m1/2) Through engine dynamo test-ing SiC valve lifter and metal valve lifter are examined and compared into abnormal phenomena such as early fracture unfair and early wear. It is hoped that this research will serve as an important springboard for the future study of heavy duty diesel engine parts developed by ceramics which has a good wear resis-tance relaibility and lightability.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.247-250
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• 2005

The need for improved fuel efficiency, weight reduction has motivated the automotive industry to focus on aluminum alloys as a replacement for steel-based alloy. To cope with the needs for high structural rigidity with low weight, it is forecasted that substantial amount of cast components will be replaced by tubular parts which are mainly manufactured by the extruded aluminum tubes. The extrusion process is utilized to produce tubes and hollow sections. Because there is no weld seam, the circumferential mechanical properties may be uniform and advantageous for hydroforming. However the possibility of the occurrence of a surface defect is very high, especially due to the temperature increase from forming at high pressure when it comes out of the bearing and the roughness of the bearing, which cause the surface defects such as the dies line and pick-up. And when forming a extruded aluminum tube, the free surface of the tube becomes rough with increasing plastic strain. This is well known as orange peel phenomena and has a great effect not only on the surface quality of a product but also on the forming limit. In an attempt to increase the forming limit of the tubular specimen, in the present paper, surface asperities generated during the hydroforming process are polished to eliminate the weak positions of the tube which lead to a localized necking. It is shown that the forming limit of the tube can be considerably improved by simple method of polishing the surface roughness during hydroforming. And also the extent of the crack propagation caused by dies lines generated during the extrusion process is evaluated according to the deformed shape of the tube.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.433-439
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• 2011

Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high temperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.

• Korean Journal of Materials Research
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• v.31 no.6
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• pp.320-324
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• 2021

Effects of growth variables and post-growth annealing on the optical, structural and electrical properties of magnetron-sputtered Ga_0.04Mg_0.10Zn_0.86O films are characterized in detail. It is observed that films grown from pure oxygen plasma showed high resistivity, ~10² Ω·cm, whereas films grown in Ar plasma showed much lower resistivity, 2.0 × 10^-2 ~ 1.0 × 10^-1 Ω·cm. Post-growth annealing significantly improved the electrical resistivity, to 4.3 ~ 9.0 × 10^-3 Ω·cm for the vacuum annealed samples and to 1.3 ~ 3.0 × 10^-3 Ω·cm for the films annealed in Zn vapor. It is proposed that these phenomena may be attributed to the improved crystalline quality and to changes in the defect chemistry. It is suggested that growth within oxygen environments leads to suppression of oxygen vacancy (Vo) donors and formation of Zn vacancy (V_Zn) acceptors, resulting in highly resistive films. After annealing treatment, the activation of Ga donors is enhanced, Vo donors are annihilated, and crystalline quality is improved, increasing the electron mobility and the concentration. After annealing in Zn vapor, Zn interstitial donors are introduced, further increasing the electron concentration.

• Korean Journal of Optics and Photonics
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• v.23 no.2
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• pp.64-70
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• 2012

We analyzed the changes in electrical and optical characteristics of 1 $mm^2$ multiple-quantum-well (MQW) blue LEDs grown on a c-plane sapphire substrate after a stress test. Experiments were performed by injecting 50 mA current for 200 hours to TO-CAN packaged sample chips. We selected the value of injection current for stress through the junction-temperature measurement by using the forward-voltage characteristics of a diode to maintain a sufficiently low junction temperature during the test. The junction temperature at the selected injection current of 50 mA was 308 K. Experiments were performed under the assumption that the average junction temperature of 308 K did not affect the characteristics of the ohmic contact and the GaN-based materials. Before and after the stress test, we measured and analyzed current-voltage, light-current, light distribution on the LED surface, wavelength spectrum and relative external quantum efficiency (EQE). After the stress test, it was observed experimentally that the optical power and the relative EQE decreased. We theoretically investigated and experimentally proved that these phenomena are due to the increased nonradiative recombination rate caused by the increased defect density.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.5 no.1
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• pp.69-86
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• 1969

On the growing of the interspecific hybrid ginseng plant, the phenomena of hybrid vigoures are observed in the root, stem, and leaf, but it can not produce seeds favorably since the ovary is abortive in most cases in interspecific hybrid plants. The present investigation was undertaken in an attempt to elucidate the embryological dses of the seed failure in the interspecific hybrid of ginseng (Panax Ginseng ${\times}$ P. Quinque folium). And the results obtained may be summarized as follows. 1). The vegetative growth of the interspecific hybrid ginseng plant is normal or rather vigorous, but the generative growth is extremely obstructed. 2). Even though the generative growth is interrupted the normal development of ovary tissue of flower can be shown until the stage prior to meiosis. 3). The division of the male gameto-genetic cell and the female gameto-genetic cell are exceedingly irregular and some of them are constricted prior to meiosis. 4). At meiosis in the microspore mother cell of the interspecific hybrid, abnormal division is observed in that the univalent chromosome and chromosome bridge occure. And in most cases, metaphasic configuration is principally presented as 23 II+2I, though rarely 22II+4I is also found. 5). Through the process of microspore and pollen formation of F1, the various developmental phases occur even in an anther loclus. 6). Macro, micro and empty pollen grains occur and the functional pollen is very rare. 7). After the megaspore mother cell stage, the rate of ovule development is, on the whole, delayed but the ovary wall enlargement is nearly normal. 8). Degenerating phenomena of ovules occur from the megaspore mother cell stage to 8-nucleate embryo sac stage, and their beginning time of constricting shape is variously different. 9). The megaspore arrangement in the parent is principally of the linear type, though rarely the intermediate type is also observed, whereas various types, viz, linear, intermediate, Tshape, and I shape can be observed in hybrid. 10). After meiosis, three or five megaspore are some times counted. 11). Charazal end megaspore is generally functional in the parents, whereas, in F1, very rarely one of the center megaspores (the second of the third megaspore) grows as an embryo sac mother cell. 12). In accordance with the extent of irregularity or abnormality in meiosis, division of embryo sac nuclei and embryo sac formation cause more nucellus tissue to remain within th, embryo sac. 13). Even if one reached the stage of embryo sac formation, the embryo sac nuclei are always precarious and they can not be disposed to theil proper, respective position. 14). Within the embryo sac, which is lacking the endospermcell, the 4-celled proembryo, linear arrangement, is observed. 15). Through the above respects, the cause of sterile or seed failure of interspecific hybrid would be presumably as follows, By interspecific crossing gene reassortments takes place and the gene system influences the metabolism by the interference of certain enzyme as media. In the F1 plant, the quantity and quality of chemicals produced by the enzyme system and reaction system are entirely different from the case of the parents. Generally, in order to grow, form, and develop naw parts it is necessary to change the materials and energy with reasonable balance, whereas in the F1 plant the metabolic process becomes abnormal or irregular because of the breakdown of the balancing. Thus the changing of the gene-reaction system causes the alteration of the environmental condition of the gameto-genetic cells in the anther and ovule; the produced chemicals cause changes of oxidatio-reduction potential, PH value, protein denaturation and the polarity, etc. Then, the abnormal tissue growing in the ovule and emdryo sac, inhibition of normal development and storage of some chemicals, especially inhibitor, finally lead to sterility or seed failure. Inconclusion, we may presume that the first cause of sterile or seed abortion in interspecific hybrids is the gene reassortment, and the second is the irregularity of the metabolic system, storage of chemicals, especially inhibitor, the growth of abnormal tissue and the change of the polarity etc, and they finally lead to sexual defect, sterility and seed failure.