• Journal of Welding and Joining
• /
• 제15권3호
• /
• pp.88-98
• /
• 1997

Welding defects, such as porosity and spike, have sometimes occurred in deep penetration electron beam welds. These defects are known to be one of the serious problem in electron beam welds. So, effects of active parameters ($a_b$) on bead shape and occurrence of defects in electron beam welds of heavy section 9%Ni steel plates were investigated. Partial penetration welding in flat position, and deep penetration welding of 10 ~ 28mm depth were investigated in this study. It is desirable to select low accelerating voltage and above the surface focus position $a_b$$\geq$1.2 at which a wine-cup shaped bead is obtained to avoid the welding defects such as spike and root porosity. When the accelerating voltage of electron beam was low (90kV), active parameter ($a_b$) did not influence on the bead width, penetration depth and weld defects significantly. However, in case of high voltage ($\geq$120kV), active parameter ($a_b$) was sensitively associated with penetraton depth and weld defects, i.e. when the active parameter (($a_b$) was in the range of 0.6 to 1.0, the depth of penetration was always over the target (23mm), while the depth of penetration was dramatically decreased with further increase of active parameter ($a_b$). The weld defects were decreased with the increase of active parameter $a_b$ resulting in the decrease of energy density of the focused beam in the root part of fusion zone.

• 한국세라믹학회지
• /
• 제51권3호
• /
• pp.197-200
• /
• 2014

We investigated the influence of blistering on $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks passivation layers. $Al_2O_3$ film provides outstanding Si surface passivation quality. $Al_2O_3$ film as the rear passivation layer of a p-type Si solar cell is usually stacked with a capping layer, such as $SiO_2$, SiNx, and SiON films. These capping layers protect the thin $Al_2O_3$ layer from an Al electrode during the annealing process. We compared $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks through surface morphology and minority carrier lifetime after annealing processes at $450^{\circ}C$ and $850^{\circ}C$. As a result, the $Al_2O_3$/SiON stacks were observed to produce less blister phenomenon than $Al_2O_3$/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositing SiNx film, the rich H species in $NH_3$ source are diffused to the $Al_2O_3$ film. On the other hand, less hydrogen diffusion occurs in SiON film as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently, the $Al_2O_3$/SiON stacks had a higher minority carrier lifetime than the $Al_2O_3$/SiNx:H stacks.

• 한국공작기계학회:학술대회논문집
• /
• 한국공작기계학회 2004년도 추계학술대회 논문집
• /
• pp.233-244
• /
• 2004

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.386-391
• /
• 2003

Sing1e crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}\;s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.86\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155K)$. After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also, we confirmed that Al in $CuAlSe_2/GaAs$ did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

• 한국전기전자재료학회논문지
• /
• 제17권5호
• /
• pp.467-475
• /
• 2004

ZnO epilayer were synthesized by the pulsed laser deposition(PLD) process on $Al_2$ $O_3$substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A $l_2$ $O_3$) substrate at a temperature of 400 $^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are 8.27${\times}$$10^{16}$$cm^{-3}$ and 299 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}$(T)= 3.3973 eV - (2.69 ${\times}$ 10$_{-4}$ eV/K) $T^2$(T＋463k). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$ , $V_{o}$ , Z $n_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/A $l_2$ $O_3$did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.s.s.s.

• 한국전기전자재료학회논문지
• /
• 제16권10호
• /
• pp.871-880
• /
• 2003

Single crystal CuAlSe$_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410 C with hot wall epitaxy (HWE) system by evaporating CuAlSe$_2$ source at 680 C. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X -ray diffraction (DCXD). The carrier density and mobility of single crystal CuAlSe$_2$ thin films measured with Hall effect by van der Pauw method are 9.24${\times}$10$\^$16/ cm$\^$-3/ and 295 cm$^2$/V $.$ s at 293 K, respectively. The temperature dependence of the energy band gap of the CuAlSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.8382 eV - (8.86 ${\times}$ 10$\^$-4/ eV/K)T$^2$/(T + 155K). After the as-grown single crystal CuAlSe$_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal CuAlSe$_2$ thin films has been investigated by PL at 10 K. The native defects of V$\_$cd/, V$\_$se/, Cd$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal CuAlSe$_2$ thin films to an optical n-type. Also, we confirmed that Al in CuAlSe$_2$/GaAs did not form the native defects because Al in single crystal CuAlSe$_2$ thin films existed in the form of stable bonds.

• 대한디지털의료영상학회논문지
• /
• 제8권1호
• /
• pp.51-55
• /
• 2006

moving photocarrier grating(MPG)기술을 이용하여 디지털 X-선 변환물질 a-Se:As 필름에서 As 첨가효과에 관하여 연구하였다. 이 방법은 시료를 조사하기 위하여 주파수를 변화시킨 2개 레이저 빔의 중첩으로 얻어진 움직이는 간섭패턴을 이용한다. 시료의 수송변수는 시료에서 변조 방향으로 유도되는 grating-속도에 의존하는 전류밀도로부터 얻어진다. As 첨가에 따른 a-Se 필름의 전자와 정공 이동도 그리고 재결합 수명을 구하였다. 전자의 이동도는 결함 상태 때문에 As 첨가에 따라 감소하는 반면, 특히 a-Se 필름에 0.3% As 첨가할 때 정공 이동도와 재결합 수명이 증가하였다. MPG 기술로 얻은 As가 첨가된 a-Se 필름의 수송성질을 a-Se:As로 제작한 X-선 detector의 X-선 감도와 비교하였다. 실험결과 0.3% As가 첨가된 a-Se으로 제작한 X-선detector가 가장 우수한 X-선 감도를 나타내었다.

• Tribology and Lubricants
• /
• 제33권2호
• /
• pp.45-51
• /
• 2017

Engine oil is a substance used for the lubrication of internal combustion systems. However, in some case, defects in engine systems may contaminate engine oil with fuel. Contaminated engine oil can cause problems in the normal functioning of a vehicle. In this study, we investigate the functional properties of engine oil contaminated with diesel fuel. The test results indicate that the engine oil contaminated with diesel fuel has low flash point, pour point, density, kinematic viscosity and cold cranking simulator value. The contaminated engine oil which has low plash point can cause fire and explosion accident. Furthermore, a four ball test indicates that the contaminated engine oil increases wear scar to poor lubricity. Moreover, we investigate the GC pattern using SIMDIST (simulated distillation) for determination of diesel in engine oil. The SIMDIST analytic result, diesel was detected at earlier retention time than engine oil in chromatogram. Thus the SIMDIST method can define whether engine oil is contaminated by diesel fuel or not. We can use the SIMDIST method for the diagnosis of oil condition instead of analyzing other physical properties that require many analytic instruments, large volume of oil sample and long analysis time.

• 한국임상수의학회지
• /
• 제26권5호
• /
• pp.467-471
• /
• 2009

This report describes Neural Tube Defects (NTDs) with Abdominal Wall Defects (AWDs) on the sibling of Yorkshire terriers. The NTDs and AWDs are rare serious congenital defects. The NTDs are neurulation abnormality that results from to failed transformation of the neurual tube by the incomplete closure of the embryonic neural plate. These dysraphic states range form mild to severe according to developmental malformation that include fusion defects of skull (crania bifida; CB) and fusion defects of vertebrae (spina bifida; SB). The AWDs are genetic defects that results from to failed formation of abdominal wall and cavity. These dysraphic states are omphalocele and gastroschisis. The 12-month dam was delivered by caesarian section and 4 littermate had obvious malformations. One male dead stillbirth fetus (L1) was revealed the extruded abdominal viscera, omphalocele. One female fetus (L2) was died within 1 hour after birth with defects of abdominal muscle upper umbilicus, gastroschisis. 3rd fetus (L3) was died within 36 hours after parturition and revealed a copious dermal and vertebral defects on the midline thorax, upper SB asperta. 4th fetus (L4) is still growing well now at 6 months but at the 2 week age, appears hairy nevus on the frontal cranium and dorsal thoracic portion. The radiograph of L1 and L2 are shown decrease bony density of calvarium and L3 was shown defect of spinose processes of the T9-T13. On our knowledge, this is first report of the SB and CB in Yorkshire terrier. And also sibling of NTDs with AWDs that has not previously been reported in the dog.

• 비파괴검사학회지
• /
• 제30권1호
• /
• pp.46-53
• /
• 2010

항공기용 복합재료 내부 여러 층에서 발생하는 박리를 정량적으로 평가하기 위한 X-ray 후방산란 검사장치를 개발하였다. 복합재료 두께방향으로의 역산란 밀도변화로부터 층간 박리를 검사하는 슬릿 방식의 카메라와 컴퓨터로 제어되는 X-ray 선원, 그리고 센서로 구성되는 X-ray 후방산란장치를 제작하여 그 성능을 충격하중에 의해 만들어진 인공결함시편을 이용해 검증하였다. 결함평가를 위해 복합재료내 산란장의 크기를 이론적으로 계산하는 수학적 해석 모델을 볼츠만 방정식을 이용하여 제안하였으며 적응필터 알고리즘을 사용하여 산란 노이즈를 최소화 하였다. 다중 박리 결함을 X-ray 후방산란장치를 통해 효과적으로 검출하였으며, 박리 위치와 박리 상태를 모두 정확하게 검사할 수 있음을 실험을 통해 확인하였다.