• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.93-96
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• Proceedings of the KIEE Conference
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• 2004.04a
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• pp.6-8
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• 2004

Recently, it is increasing to use more Brushless DC Motor with high energy density permanent magnet and semiconductor control unit for complementing the mechanical defect of Brushed DC Motors. For designing of BLDC Motors are required complex parameters like as rated characteristic, Geometries, B-H curve of magnet and steel materials, winding factor, etc. Moreover, design and manufacturing are difficult because of additional control circuits. Generally, Design parameters are gotten by analysis of Motor which is used. And the design parameters are used to design a new motor. But getting the design parameters through the eyes and experience is limited and it takes a long time. In this paper a method is proposed to efficiently analyze motor design parameters through the No load and Load Test, Back EMF Test, Simulation Analysis and Patent Analysis Method for existing BLDC Motor for a cooling Fan in Vehicle.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.237.2-237.2
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• 2014

이번 연구는 system-on-panel에 적용하기 위한 비휘발성 메모리의 전하보유시간 및 메모리 윈도우 특성 향상에 관한 연구이다. 이를 위해 SiO2/SiOX/SiOXNY의 메모리 구조를 이용하였으며, 채널층으로 결정화 온도에 따른 수소화된 미세결정 실리콘-게르마늄을 이용하였다. 채널 층으로 사용된 수소화된 미세결정 실리콘-게르마늄은 비정질 실리콘-게르마늄보다 더 낮은 bandgap과 더 적은 defect density로 인하여 더 향상된 전하보유시간 및 메모리 윈도우를 얻을 수 있었다. 결정화가 거의 이루어지지 않은 실리콘-게르마늄 비휘발성 메모리의 경우 약 4.9V의 메모리 윈도우를 얻을 수 있었다. 반면 300oC에서 약 43.4%의 결정화가 이루어진 실리콘-게르마늄의 메모리 윈도우는 약 5.9V로 약 17%의 향상이 있으며, 10년 후 74.5%의 높은 전하보유시간을 가졌다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.305-306
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• 2005

The effects of As addition In amorphous selenium (a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating (MPG) technique We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As X-ray device. The fabricated a-Se (0.3%As) based X-ray detector exhibited the highest X-ray sensitivity of 5 samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.252-253
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• 2005

The effects of As addition in amorphous selenium (a-Se) films on the carrier mobilities and the recombination lifetime have been studied using the moving photo-carrier grating (MPG) measurements. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic (As) additions up to 1% have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density from shallow traps.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.142-142
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• 2017

High Flory-Huggins interaction parameter (${\chi}$)를 가지는 polystyrene-block-dimethylsiloxane (PS-b-PDMS)는 초미세 패턴 제작과 우수한 defect density, 우수한 edge roughness 특성으로 향상된 패턴을 제공한다는 점에서 반도체 분야에서 많은 연구가 되고 있다. 하지만, PS와 PDMS 사이에 존재하는 큰 surface tension의 차이로 인해 PDMS는 PS와 air 사이에서 segregate되기 때문에 수직배향에 불리하여 high aspect ratio (HAR)을 가지는 cylinder, lamellar 패턴 제작에 있어 큰 어려움을 가진다. 본 연구에서는 이러한 문제를 해결하기 위해, PS-b-PDMS BCP 패턴과 하부 실리콘 기판 사이에 amorphous carbon layer (ACL)를 삽입하여 효과적으로 pattern transfer하는 공정을 연구하였다. 플라즈마를 이용하여 무한대에 가까운 etch selectivity를 가지는 식각 공정을 개발함으로써 낮은 aspect ratio를 가지는 PS-b-PDMS BCP 패턴의 한계점을 극복하였다. Large-x value를 가지는 BCPs를 이용하여도 매우 높은 aspect ratio를 가지면서 동시에 pattern quality를 향상시킬 수 있는 plasma process를 제시하였다.

• Applied Science and Convergence Technology
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• v.27 no.2
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• pp.42-45
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• 2018

Photovoltaic and optoelectronic devices based on hybrid metal halide perovskites ($MAPbX_3$; $MA=CH_3NH_3{^+}$, $X=Cl^-$, $Br^-$, or $I^-$) are rapidly improving in power conversion efficiency. Also, during recent years, perovskite single crystals have emerged as promising materials for high-efficiency photovoltaic and optoelectronic devices because of their low defect density. Here we show that the light soaking effect of mixed halide perovskite ($MAPbBr_{3-x}I_x$) single crystals can be explained using photoluminescence, time-resolved photoluminescence, and Raman scattering measurements. Unlike Br-based single crystal, Br/I mixed single crystal show a strong light soaking effect under laser irradiation condition that was related to the existence of multiple phases.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.306-306
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• 2011

Three dimensional(3D) topological insulators(TIs) of Bi binary alloys are characterized by a bulk energy gap with strong spin-orbit coupling and metallic surface states protected by time-reversal symmetry. It was reported that film forms of such materials were advantageous over bulk forms due to less defect density and better crystallinity. So far, the films have been prepared on several substrates including semiconductors and graphene. But, there were no studies on metal substrates. For electronic transport experiments and device applications, it is necessary to know epitaxial relation between TIs and metal electrodes. In this study, Atomically flat films of Bi2Se3 were grown on a Au(111) metal substrate by in-situ molecular beam epitaxy. Using home-built scanning tunneling microscope, we observed hexagonal atomic structures which corresponded to the outmost selenium atomic layer of Bi2Se3. Triangular-shaped defects known as Selenium vacancy were also found.

• Journal of the Korean Society of Industry Convergence
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• v.7 no.1
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• pp.69-82
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• 2004

Recently, in the food, paper, steel and plastic industries, plate or sheet type products have been produced by the rolling drum. Steam heating drums are introduced into plastic products facilities in order to keep the density, microstructure, and strength of material uniformly. The drum journal can not help being concentrated by stresses due to the bending and torsion. Especially the drum, heated by high pressure steam, might be exposed in the steam leakage accident. First of all, the stresses on the steam drum journal are to be analyzed, and a case study proper to the subject was performed with a scraped journal, in order to investigate the failure characteristics as well as the initiation and propagation of fatigue cracks, and most probable circumstances of crack initiation. As the result of this study, it is suggested that newly installed drum journal be thoroughly inspected at the next periodic maintenance intervals for evidence of cracking, the microstructure examination and hardness measurements to prevent steam drum from the failure accident.

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.1034-1040
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• 1997

A solar cell conversion effiency was degraded by grain boundary effect in polycrystalline silicon. Grain boundaries acted as potential barriers as well as recombination centers for the photo-generated carriers. To reduce these effects of the grain boundaries we investigated various influencing factors such as emitter thickness thermal treatment preferential chemical etching of grain boundaries grid design contact metal and top metallization along boundaries. Pretreatment in $N_2$atmosphere and gettering by POCl$_3$and Al were performed to obtain multicrystalline silicon of the reduced defect density. Structural electrical and optical properties of slar cells were characterized before and after each fabrication process. Improved conversion efficiencies of solar cell were obtained by a combination of pretreatment above 90$0^{\circ}C$ emitter layer of 0.43${\mu}{\textrm}{m}$ Al diffusion in to grain boundaries on rear side fine grid finger top Yb metal and buried contact metallization along grain boundaries.