• 한국진공학회:학술대회논문집
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• 한국진공학회 2002년도 제23회 학술발표회 초록집
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• pp.172-173
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• 2002

• 한국해양공학회지
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• 제8권1호
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• pp.131-143
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• 1994

The BTA(boring and trepanning association) deep hole machining has an increasing demands because of its wide applications and its good productivity. The main feature of the BTA tools is that the tool cutting edges are unsymmetrically located on the boring head. This provides a stabilizing cutting force resultant necessary for self guidance of the boring head. The BTA tools are capable of machining for having a large length to diameter ratio in single pass. A study of the accuracy and surface finish of holes produced would reveal quite useful information regarding the process. This study deals with the experimental results obtained during BTA machining on SM55C, SM45C steel under differnt machining conditions.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1993년도 춘계학술대회 논문집
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• pp.76-80
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• 1993

절삭가공중에서 DRILL가공은 일반기계가공 공정중에 23 .approx. 25% 정도의 비율을 점우하고 있는 중요한 위치의 작업의 하나이고 또한 요구되는 정밀도를 만족하기 어렵고, 높은 생산성이 요구되는 가공법이다. 기계가공의 무인화, 자동화, 고능률화 및 정도향상 이라는 측면에서 더욱 이에 대응할 수 있는 가공방법 즉 공작물, 공구재료, 공구형상 및 절삭조건등에 걸쳐 광범위하게 연구개발 되어 져 가고 있다. 이 작업중 특히 곤란한 것은 깊은 구멍가공(DEEP HOLE DRILL)으로서 깊이/직경의 비가 극히 높은(약 5배이상) 절삭가공 의 경우에는 CHIP의 배출, 절삭날부의 윤활, 공구의 진동등의 문제로 인하여 일반적인 절삭가공 공법으로는 가공이 여려운 경우가 많다. 본 연구는 Solid BTA Drill(Mlti-tip Drill Head with Brazed Tips)에 의하여 가공에요구되는 절삭성 분석과 절삭조건의 변화에 따른 공작물의 가공정도 즉, 가공구멍의 직경의 변화, 표면거칠기. 진원도의 변화상태 및 공구의 마모된 현상에 대하여 실험조사하여 공구에 제한된 수명을 연장하고, 제품에 요구되는 품질수준을 확보하는가에 대하여 본 실험을 통하여 분석하도록 하였다.

• 한국생산제조학회지
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• 제9권6호
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• pp.103-110
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• 2000

Experimental study of drilling for duralumin A2024 was conducted with intermittently accelerated and decelerated feedrate. It is achieved through a programmed periodic increase and decrease in the feedrate using a machining center. The following experimental results were performed with the objective of solving chip to disposal problems. In conventional drilling of aluminum, long continuous chips are produced with winding around the drill and causing difficulties in eliminating chips from the cutting zone. In order to acquire the basic data necessary to regulate the chip profile, the relationship between cutting variables and chip shape was investigate. The following conclusions are established from the experimental results. At a suitable feed fluctuation ratio, intermittently decelerated feed drilling proved successful in braking chips to appropriate lengths while maintaining stable cutting. Thus, it is an effective method for improving chip disposal. The amplitude of the dynamic component of cutting force in intermittent feed drilling is influenced by the feed fluctuation ratio.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.492-496
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). In this paper, We investigated dopants(As, Cl) composition rate to improve dark resistivity and transport properties of charge carrier in amorphous selenium using by direct X-ray conversion material. Alloying a-Se with As inhibits the recrystallization of a-Se but introduces undesirable deep hole traps. then doping with Cl(in the ppm range) compensates for the deep hole traps. We investigated their composition rate in various doping conditions and then obtained optimum dopant composition rate. The result was Se-As 0.3%-Cl 30 ppm and X-ray Sensitivity was 0.57 pc/pixel$.$mR at 137 $\mu\textrm{m}$ x 137 $\mu\textrm{m}$ Pixel area.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2003년도 춘계학술대회 발표 논문집
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• pp.12-17
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• 2003

본 연구에서는 MICP Etching system 을 이용한 Via contact 및 Deep contact hole etch process 특성을 연구하였다. Langmuir probe 를 이용한 MICP source 의 Plasma density & electron temperature 측정하였고 탄소와 플로우르를 포함하는 혼합 Plasma 를 형성하여 RF frequency, wall temperature, chamber gap, gas chemistry 등의 변화에 따른 식각 특성을 조사하였다. Plasma density 는 1000w 에서 $10^{11}$/$cm^3$ 이상의 high density plasma와 uniform plasma 형성을 확인하였고 $CH_{2}F_{2}$와 CO의 적절한 혼합비를 이용하여 Oxide to PR 선택비가 10 이상인 고선택비 조건을 확보하였다. 고선택비 형성에 따라 Polymer 형성이 많이 되었고 이를 개선하기 위하여 반응 챔버의 온도 조절을 통하여 Polymer 증착 방지에 효과적인 것을 확인하였다. MICP source를 이용하여 탄소와 플로우르의 혼합 가스와 식각 챔버의 온도 조절에 의한 선택비 증가를 확보하여 High Aspect Ratio Contact Hole Etch 가능성을 확보하였다.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 1998년도 추계학술대회 논문집
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• pp.170-175
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• 1998

• 대한치과보철학회지
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• 제40권4호
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• pp.374-385
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• 2002

A total of 605 implant fixture prosthesis delivered by 3 clinics and 2 laboratories were examined in this study, The object of this study was to determine the proper length of screw head. The depth of access hole were measured and compared to the type of fixture, abutment, gold screw and prosthesis. The results were as follows : 1 The average number of fixtures per patient were 2.97. 2. The number of fixture installed in the upper posterior area are 327(55.56 %), the upper posterior area 171 (28.25%). 3. The depth of access hole is 4.23 mm in shallow area, and 5.46 mm in deep area and the differences were 1.23 mm. 4. The average depth of the aceess hole of the UCLA abutment were 5.02 mm. 5. The number of 4-5 mm access hole depth were 60(22.39%) in abutment screw level and the number of 4-5 mm depth in fixture level were 101 (29.19%). 6. In the shape of screw head, hexed type were 576(95.21%), slotted type were 29(4.79%).

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.956-960
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• 2006

Deep-blue organic light-emitting diodes (OLEDs) with/without ultra-thin LiF layer inserted at the interface between hole-blocking and electron-transporting layers have been fabricated and investigated. The fundamental structures of the OLEDs are ITO/m-MTDATA/NPB/BCP/LiF (with/ without)/ $Alq_3/LiF/Al.Deep$ blue light emission with CIE coordinate of (0.15, 0.11) has been achieved for all devices. Further, by inserting LiF with thickness of 1nm at the interface between BCP and $Alq_3$ layer, the luminous efficiency as well as the power efficiency is much improved compared to that without. The enhancement of electron injection due to insertion of LiF may account for this improvement.