• 제목/요약/키워드: DVD/Blu-ray Stamper

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DVD/Blu-ray 스템퍼를 이용한 핫엠보싱 특성 (Characteristics of Hot Embossing using DVD/Blu-ray Stamper)

  • 김병희;반준호;신재구;김헌영
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2004년도 추계학술대회논문집
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    • pp.305-310
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    • 2004
  • The Hot Embossing Lithography(HEL) as a method for the fabrication of nanostructure with polymer is becoming increasingly important because of its simple process, low cost, high replication fidelity and relatively high throughput. In this study, we investigated the characteristics of hot embossing lithography as a nanoreplication technique. To grasp characteristics of nano patterning rheology by process parameters(embossing temperature, pressure and time), we have carried out various experiments by using the DVD(400nm pattern width) and Blu-ray nickel stamps(150nm pattern width). During the hot embossing process, we have observed the characteristics of the size effect. The quality of products made by hot embossing is affected by its cooling shrinkage. The demolding process at the glass transition temperature results in low quality because of the shrinkage of the polymer. Therefore, the quantification of the temperature condition is essential for the replication of high quality.

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나노사출성형용 스탬퍼 제작을 위한 Electron beam lithography 패터닝 연구 (Electron beam lithography patterning research for stamper fabrication using nano-injection molding)

  • 엄상진;서영호;유영은;최두선;제태진;황경현
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2005년도 추계학술대회 논문집
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    • pp.698-701
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    • 2005
  • We have investigated experimentally a nano patterning using electron beam lithography for the nickel stamper fabrication. Recently, DVD and Blu-ray disk(BD) have nano-scale patterns in order to increase the storage density. Specially, BD has 100nm-scale patterns which are generally fabricated by electron beam lithography. In this paper, we found optimum condition of electron-beam lithography for 100nm-scale patterning. We controlled various conditions of EHP(acceleration voltage), beam current, dose and aperture size in order to obtain optimum conditions. We used 100nm-thick PMMA layer on a silicon wafer as photoresist. We found that EHP was the most dominant factor in electron-beam lithography.

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