• The Transactions of the Korea Information Processing Society
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• v.4 no.1
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• pp.149-160
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• 1997

This paper is concerned with the problem of speaker-adaptive speech synthes is method using a mapped codebook designed by fuzzy mapping on FLVQ (Fuzzy Learning Vector Quantization). The FLVQ is used to design both input and reference speaker's codebook. This algorithm is incorporated fuzzy membership function into the LVQ(learning vector quantization) networks. Unlike the LVQ algorithm, this algorithm minimizes the network output errors which are the differences of clas s membership target and actual membership values, and results to minimize the distances between training patterns and competing neurons. Speaker Adaptation in speech synthesis is performed as follow;input speaker's codebook is mapped a reference speaker's codebook in fuzzy concepts. The Fuzzy VQ mapping replaces a codevector preserving its fuzzy membership function. The codevector correspondence histogram is obtained by accumulating the vector correspondence along the DTW optimal path. We use the Fuzzy VQ mapping to design a mapped codebook. The mapped codebook is defined as a linear combination of reference speaker's vectors using each fuzzy histogram as a weighting function with membership values. In adaptive-speech synthesis stage, input speech is fuzzy vector-quantized by the mapped codcbook, and then FCM arithmetic is used to synthesize speech adapted to input speaker. The speaker adaption experiments are carried out using speech of males in their thirties as input speaker's speech, and a female in her twenties as reference speaker's speech. Speeches used in experiments are sentences /anyoung hasim nika/ and /good morning/. As a results of experiments, we obtained a synthesized speech adapted to input speaker.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.241-241
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• 2012

Semiconductor industry has been taking the advantage of improvements in process technology in order to maintain reduced device geometries and stringent performance specifications. This results in semiconductor manufacturing processes became hundreds in sequence, it is continuously expected to be increased. This may in turn reduce the yield. With a large amount of investment at stake, this motivates tighter process control and fault diagnosis. The continuous improvement in semiconductor industry demands advancements in process control and monitoring to the same degree. Any fault in the process must be detected and classified with a high degree of precision, and it is desired to be diagnosed if possible. The detected abnormality in the system is then classified to locate the source of the variation. The performance of a fault detection system is directly reflected in the yield. Therefore a highly capable fault detection system is always desirable. In this research, time series modeling of the data from an etch equipment has been investigated for the ultimate purpose of fault diagnosis. The tool data consisted of number of different parameters each being recorded at fixed time points. As the data had been collected for a number of runs, it was not synchronized due to variable delays and offsets in data acquisition system and networks. The data was then synchronized using a variant of Dynamic Time Warping (DTW) algorithm. The AutoRegressive Integrated Moving Average (ARIMA) model was then applied on the synchronized data. The ARIMA model combines both the Autoregressive model and the Moving Average model to relate the present value of the time series to its past values. As the new values of parameters are received from the equipment, the model uses them and the previous ones to provide predictions of one step ahead for each parameter. The statistical comparison of these predictions with the actual values, gives us the each parameter's probability of fault, at each time point and (once a run gets finished) for each run. This work will be extended by applying a suitable probability generating function and combining the probabilities of different parameters using Dempster-Shafer Theory (DST). DST provides a way to combine evidence that is available from different sources and gives a joint degree of belief in a hypothesis. This will give us a combined belief of fault in the process with a high precision.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.433-433
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• 2012

As the requirement in patterning geometry continuously shrinks down, the termination of etch process at the exact time became crucial for the success in nano patterning technology. By virtue of real-time optical emission spectroscopy (OES), etch end point detection (EPD) technique continuously develops; however, it also faced with difficulty in low open ratio etching, typically in self aligned contact (SAC) and one cylinder contact (OCS), because of very small amount of optical emission from by-product gas species in the bulk plasma glow discharge. In developing etching process, one may observe that coupon test is being performed. It consumes costs and time for preparing the patterned sample wafers every test in priority, so the coupon wafer test instead of the whole patterned wafer is beneficial for testing and developing etch process condition. We also can observe that etch open area is varied with the number of coupons on a dummy wafer. However, this can be a misleading in OES study. If the coupon wafer test are monitored using OES, we can conjecture the endpoint by experienced method, but considering by data, the materials for residual area by being etched open area are needed to consider. In this research, we compare and analysis the OES data for coupon wafer test results for monitoring about the conditions that the areas except the patterns on the coupon wafers for real-time process monitoring. In this research, we compared two cases, first one is etching the coupon wafers attached on the carrier wafer that is covered by the photoresist, and other case is etching the coupon wafers on the chuck. For comparing the emission intensity, we chose the four chemical species (SiF2, N2, CO, CN), and for comparing the etched profile, measured by scanning electron microscope (SEM). In addition, we adopted the Dynamic Time Warping (DTW) algorithm for analyzing the chose OES data patterns, and analysis the covariance and coefficient for statistical method. After the result, coupon wafers are over-etched for without carrier wafer groups, while with carrier wafer groups are under-etched. And the CN emission intensity has significant difference compare with OES raw data. Based on these results, it necessary to reasonable analysis of the OES data to adopt the pre-data processing and algorithms, and the result will influence the reliability for relation of coupon wafer test and whole wafer test.