• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1019-1022
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• 2004

High performance p-ch poly-Si TFTs with excellent stability were developed. By using a frequency doubled DPSS CW laser, the a-Si on glass could be crystallized into one dimensional single crystalline silicon named as a sequential lateral crystallization (SLC) region. We fabricated p-ch TFTs on SLC region and the typical characteristic values of the TFTs were $u_{fe}$ = 180 $cm^2$/Vs, $V_{th}$ = -3 V, S.S. = 0.5 V/dec, and $I_{off}$ = 1 pA/um@ $V_d$ = -10V. It is found that the TFTs are very stable after bias stresses such as negative and positive gate biases, hot carrier bias and high current bias. These results indicate that the poly-Si in SLC region is suitable for system on glass (SOG) application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.347-347
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• 2010

In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.