• Bulletin of the Korean Chemical Society
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• 제2권3호
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• pp.96-104
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• 1981

(1) The flow data of f (stress) and ${\dot{s}$ (strain rate) for Fe and Ti alloys were plotted in the form of f vs. -ln ${\dot{s}$ by using the literature values. (2) The plot showed two distinct patterns A and B; Pattern A is a straight line with a negative slope, and Pattern B is a curve of concave upward. (3) According to Kim and Ree's generalized theory of plastic deformation, pattern A & B belong to Case 1 and 2, respectively; in Case 1, only one kind of flow units acts in the deformation, and in Case 2, two kinds flow units act, and stress is expressed by $f={X_1f_1}+{X_2f_2}$where $f_1\;and\;f_2$ are the stresses acting on the flow units of kind 1 and 2, respectively, and $X_1,\;X_2$ are the fractions of the surface area occupied by the two kinds of flow units; $f_j=(1/{\alpha}_j) sinh^{-1}\;{\beta}_j{{\dot{s}}\;(j=1\;or\;2)$, where $1/{\alpha}_j\;and\;{\beta}_j$ are proportional to the shear modulus and relaxation time, respectively. (4) We found that grain-boundary flow units only act in the deformation of Fe and Ti alloys whereas dislocation flow units do not show any appreciable contribution. (5) The deformations of Fe and Ti alloys belong generally to pattern A (Case 1) and B (Case 2), respectively. (6) By applying the equations, f=$(1/{\alpha}_{g1}) sinh^-1({\beta}_{g1}{\dot{s}}$) and $f=(X_{g1}/{\alpha}_{g1})sinh^{-1}({\beta}_{g1}{\dot{s}})+ (X_{g2}/{\alpha}_{g2})\;shih^{-1}({\beta}_{g2}{\dot{s}})$ to the flow data of Fe and Ti alloys, the parametric values of $x_{gj}/{\alpha}_{gj}\;and\;{\beta}_{gs}(j=1\;or\;2)$ were determined, here the subscript g signifies a grain-boundary flow unit. (7) From the values of ($({\beta}_gj)^{-1}$) at different temperatures, the activation enthalpy ${\Delta}H_{gj}^{\neq}$ of deformation due to flow unit gj was determined, ($({\beta}_gj)^{-1}$) being proportional to , the jumping frequency (the rate constant) of flow unit gj. The ${\Delta}H_{gj}\;^{\neq}$ agreed very well with ${\Delta}H_{gj}\;^{\neq}$ (self-diff) of the element j whose diffusion in the sample is a critical step for the deformation as proposed by Kim-Ree's theory (Refer to Tables 3 and 4). (8) The fact, ${\Delta}H_{gj}\;^{\neq}={\Delta}H_{j}\;^{\neq}$ (self-diff), justifies the Kim-Ree theory and their method for determining activation enthalpies for deformation. (9) A linear relation between ${\beta}^{-1}$ and carbon content [C] in hot-rolled steel was observed, i.e., In ${\beta}^{-1}$ = -50.2 [C] - 40.3. This equation explains very well the experimental facts observed with regard to the deformation of hot-rolled steel..

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.347.2-347.2
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• 2016

Recently, in order to improve the performance of the colloidal quantum dot solar cells (CQDSCs), various efforts such as the modification of the cell architecture and surface treatment for quantum dot (QD) passivation have been made. Especially, the incorporation of halides into the QD matrix was reported to improve the performances significantly via passivating QD trap states that lower the life-time of the minority-carrier. In this work, we fabricated a lead sulfide (PbS) QD bilayer treated with different ligands and utilized it as a photoactive layer of the CQDSCs. The bottom and top PbS layer was treated using metal iodide ($MI_x$ and butanedithiol (BuDT), respectively. All the depositions and ligand treatments were carried out in air using layer-by-layer spin-coating process. The fabrication of the active layers as well as the n-type zinc oxide (ZnO) layer was successfully carried out on the bendable indium-tin-oxide (ITO)-coated polyethylene terephthalate (PET) substrate, which implies that this technique can be applied to the fabrication of flexible and/or wearable solar cells. The power conversion efficiency (PCE) of the CQDSCs with the architecture of $PET/ITO/ZnO/PbS-MI_x/PbS-BuDT/MoO_x/Ag$ reached 4.2 %, which is significantly larger than that of the cells with single QD (PbS-BuDT) layer.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
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• pp.137-141
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• 2005

Quantum dot(QD) 메모리용 silicon nano-particle을 corona 방전방법에 의해 상온에서 대량 발생하는 방법을 개발하였다. Silicon QD는 SiH4 가스를 코로나 방전 영역을 통과시켜 발생시켰으며, 코로나 전압은 2.75kV를 사용하였다. SiH4 몰농도 $0.33{\times}10^{-7}\;mol/l$ 일 경우 발생된 QD입자 크기는 약 10nm이며 기하학적 표준편차(geometric standard deviation)는 1.31이었다. 이 조건에서 nonvolatile quantum dot semiconductor memory (NVQDM)를 제작하였으며, 이렇게 제작된 NVQDM flat band voltage는 1.5 volt였다.

• 대한방사선기술학회지:방사선기술과학
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• 제39권4호
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• pp.601-606
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• 2016

호흡동조방사선치료에서 비동일 평면치료는 테이블의 회전이 있기 때문에 테이블의 회전에 따른 적외선 카메라와 마커 사이의 거리 변화로 인하여 마커 움직임의 인식을 Real-time Position Management 시스템의 two dot 마커와 six dot 마커의 움직임 반영의 정확성을 평가하고자 한다. 움직임을 평가는 two dot 마커에서 테이블 각도를 시계방향, 반시계방향으로 각 $10^{\circ}$씩 변화하여 측정하였으며, six dot 마커에서도 테이블 각도를 시계방향으로 각 $10^{\circ}$ 변화하여 기준 $0^{\circ}$에서의 기준과 비교하였을 때 기준 진폭 1.173에서 1.165, 테이블 각도 $20^{\circ}$에서는 1.132, 테이블 각도 $30^{\circ}$에서는 1.083의 진폭값으로 나타났다. 반시계방향으로 $350^{\circ}$에서는 기준 진폭 1.168에서 1.157, 테이블 각도 $340^{\circ}$에서는 1.124, 테이블 각도 $330^{\circ}$에서는 1.079 진폭값으로 나타났다. 본 연구에서는 팬톰을 이용하여 테이블 변화에 따른 진폭의 값을 정량적으로 평가한 점에 학술적 의미를 두고자 한다.

• International Journal of Fuzzy Logic and Intelligent Systems
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• 제15권4호
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• pp.260-267
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• 2015

In the past, we implemented a web-based smart education platform, but this is not efficient in a smart or mobile education environment. Therefore, in this paper, we propose an Android-based e-board smart platform for a smart or mobile education system. Here, we use Anoto digital pen- and dot pattern-based technologies. This Android-based smart education platform is efficient for a smart education environment. Further, we implement the hardware and software parts of the technologies, an Anoto-based trajectory recognition algorithm, and a probabilistic neural network for handwritten digit and hand gesture recognition.

• 한국전기전자재료학회논문지
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• 제27권3호
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• pp.151-155
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• 2014

We have developed quantum dot light emitting diodes (QD-LEDs) using a InP/ZnSe/ZnS multi-shell QD emission layer. The hybrid structure of organic hole transport layer/QD/organic electron transport layer was used for fabricating QD-LEDs. Poly(4-butylphenyl-diphenyl-amine) (poly-TPD) and tris[2,4,6-trimethyl-3-(pyridin-3-yl)phenyl]borane (3TPYMB) molecules were used as hole-transporting and electron-transporting layers, respectively. The emission, current efficiency, and driving characteristics of QD-LEDs with 50, 65 nm thick 3TPYMB layers were investigated. The QD-LED with a 50 nm thick 3TPYMB layer exhibited a maximum current efficiency of 1.3 cd/A.

• 한국컴퓨터정보학회논문지
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• 제23권4호
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• pp.81-88
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• 2018

In this paper, we present some problems with the Groupware Messenger functionality based on dot net 2.0 and implement a new design structure to solve them. They include memory leakage, slow processing, and client window memory crash. These problems resulted in the inconvenience of using instant messaging and the inefficient handling of office tasks. Therefore, in this paper, instant messaging functionality is implemented according to a new design architecture. The new system upgrades dot net 4.5 for clients and deploys the new features based on MQTT for the messenger server. We verify that the memory leak problem and client window memory crash issues have been eliminated on the system with the new messenger functionality. We measure the amount of time it takes to bind data to a set of messages and evaluate the performance, compared to a given system. Through this comparative evaluation, we can see that the new system is more reliable and performing.

• 천문학논총
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• 제4권1호
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• pp.16-30
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• 1989

We present recent data of absolute measurements of flux emmitted in the visible continua of some galactic Wolf-Rayet stars, carried out by means of a two-channel scanner built up cooperatively by the Observatoire de Lyon and the Laboratoire d'Astronomie Spatiale. Our measurements lead to the determination of stellar angular diameters which enable us to compute log $L_*/L_{\odot}$ and to locate the WR stars in the HR diagram: The WR stars are cooler than the zero age main sequence (ZAMS) and the WN7, WN8 types appear more luminous than other subclasses. The stellar wind terminal velocities, $V_{\infty}$, deduced from the empirical relation of the effective temperatures by Underhil1(1983) and $V_{\infty}$ adopted from the work of Willis(1982) show about 2,000km/s. We derived the rate of mass loss for the program stars from the formula, $\dot{M}={\varepsilon}(T_{eff})\;L/V_{\infty}{\cdot}c$ by using the obtained effective temperatures, luminosities and $V_{\infty}$ in this work. Their values range from $\dot{M}=1.4{\times}10^{-5}$ to $\dot{M}=5.8{\times}10^{-5}\;\dot{M}_{\odot}/yr$.

• IMMUNE NETWORK
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• 제5권4호
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• pp.252-257
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• 2005

Background: This study was designed to investigate the effect of exercise training on defense mechanism of chronic degenerative disease, aging, and memory impairments of senescence-accelerated mouse (SAM)P8 under the hypothesis that "Senile dementia may be prevented by regular exercises". Methods: To evaluate the effects of exercise training on the defense mechanism of aging and memory impairment, SAMP8 were divided into two groups, the control group and exercise training groups. the exercise training group were performed with low $(\dot{V}O_2max\;25{\sim}33%)$, middle ($\dot{V}O_2max$ 50%) and high $(\dot{V}O_2max\;66{\sim}75%)$ intensity exercise. All SAMP8 mice were fed experimental diet ad libitum until 4, 8 months, and dead period. Results: Median lifespan in middle exercise group resulted in a significantly increased (23.5% and 18.7%, respectively), whereas these lifespan in high exercise group resulted in an unexpectedly decreased (13.5% and 12.1%, respectively) compared with control group. Body fat levels in 4 and 8 months of age were significantly decreased 43% to 51% in middle exercise group, whereas were remarkably deceased to 57% in high exercise group compared with control group. It is believed that extended median and maximum lifespan may be effected by calory restriction through the exercise training. Acetylcholine (ACh) levels were significantly increased 6.7% and 8.5% in middle and high exercise groups, and also choline acetyltransfease (ChAT) activities were significantly increased 10.3% and 11.9% in middle and high exercise groups. Conclusion: These results suggest that proper and regular exercises such as middle group ($\dot{V}O_2max$ 50%) may play an effective role in attenuating an oxygen radicals and may play an important role in improving a learning and memory impairments of senile dementia.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.110-110
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• 2010

본 실험에서는 Silicon (001) 기판을 사용하여 silicon 기판상에 modified Stranski-Krastanow(S-K) 방식으로 InAs quantum dot (QD) 을 성장하고 그 위에 InSb layer를 형성하였다. 기판온도 $390^{\circ}$에서 In injection period를 4번 반복하여 제작된 InAs quantum dot layer를 buffer로 사용하였으며, QD layer의 밀도는 $1{\mu}m^2$ 당 600개, height가 $6.2\;{\pm}\;2.0\;nm$, width가 $36.1\;{\pm}\;9.2\;nm$ 정도이다. 성장된 $2.8{\mu}m$ 두께의 InSb film의 특성을 분석해 보면 AFM 상에서의 root mean square (rms) roughness는 5.142nm정도이며, electron mobility는 340 K 에서 $41,352cm^2/Vs$, 1.8 K에서는 $4,215cm^2/Vs$ 정도를 나타내었다. 본 실험에서는 다른 실험과는 달리 InAs QD 을 buffer layer로 사용하였으며, silicon기판도 아무런 처리가 되지 않은 (001)기판을 사용하였으므로 기존의 다른 연구 결과와는 차별성을 가진다. 또한 buffer로 사용된 InAs quantum dot layer의 종류를 한 가지로 고정하고 실험을 하였지만 추후 더욱 다양한 밀도와 크기의 quantum dot layer를 적용시키고, 기존의 다른 논문에서 적용된 방법들을 추가로 적용시켜 본다면 mobility값은 더욱 증가할 것으로 생각된다. 이러한 연구를 통해 값이 싸고 구하기 쉬운 silicon기판상에 silicon에 비하여 더 좋은 특성을 갖는 III-V족 화합물 반도체 소자를 구현 할 수 있을 것으로 생각된다.