• 한국운동역학회지
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• 제20권4호
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• pp.387-393
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• 2010

The purpose of this study was to compare pregnant women's gait parameters and mechanical energies caused by changes in hormone levels and anatomical features such as body mass, body-mass distribution, joint laxity, and musculo-tendinous strength from pregnancy to postpartum. Ten subjects (height: $161{\pm}6.5cm$, mass: $62.7{\pm}10.4\;kg$, $66.4{\pm}9.3\;kg$, $68.4{\pm}7.7\;kg$, $57.2{\pm}7.7\;kg$) participated in the four times experiments (the first, middle, last term and after birth) and walked ten trials at a self-selected pace without shoes. The gait motions were captured with Qualisys system and gait parameters were calculated with Visual-3D. Pregnant women's gait velocities were decreased during the pregnancy periods, but increased after birth. Stride width and cycle time were increased during pregnancy, but decreased after birth. Thigh energy (77.4%) was greater than shank energy (19.06%) or feet (3.54%) about total energy of the lower limbs. Their feet (Left R2=0.881, Right R2=0.852) and shank (Left R2=0.318, Right R2=0.226) energies were significantly increased (positive correlation), but double limb stance time (DLST, R2=0.679) and body total energy (R2=0.138) were decreased (negative correlation) for their velocities. These differences suggest that thigh segment may be a dominant segment among lower limbs, and have something to do with gait velocities. Further studies should investigate joint power and joint work to find energy dissipation or absorption from pregnancy period to postpartum.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.420-420
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• 2013

We investigated oxygen plasma effect on defect states near the interface of AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on a silicon substrate. After the plasma treatment, electrical properties were evaluated using a frequency dependant Capacitance-Voltage (C-V) and a temperature dependant C-V measurements, and a deep level transient spectroscopy (DLTS) method to study the change of defect densities. In the depth profile resulted from the temperature dependant C-V, a sudden decrease in the carrier concentration for two-dimensional electron gas (2DEG) nearby 250 K was observed. In C-V measurement, the interface states were improved in case of the oxygen-plasma treated samples, whereas the interface was degraded in case of the nitrogen-plasma treated sample. In the DLTS measurement, it was observed the two kinds of defects well known in AlGaN/GaN structure grown on sapphire substrate, which have the activation energies of 0.15 eV, 0.25 eV below the conduction band. We speculate that this defect state in AlGaN/GaN on the silicon substrate is caused from the decrease in 2DEG's carrier concentrations. We compared the various DLTS signals with filling pulse times to identify the characteristics of the newly found defect. In the filling pulse time range under the 80 us, the activation energies changed as the potential barrier model. On the other hand, in the filling pulse time range above the 80 us, the activation energies changed as the extended potential model. Therefore, we suggest that the found defect in the AlGaN/GaN/Si structure could be the extended defect related with AlGa/N/GaN interface states.