• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.4
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• pp.25-34
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• 2019

Recently, when a fault occurs at a long-distance point in a LVDC (low voltage direct current) distribution feeder in a light rail system, the magnitude of the current can decrease to less than that of the load current of a light rail system. Therefore, proper protection coordination method to distinguish a fault current from a load current is required. To overcome these problems, this paper proposes an optimal algorithm of protection devices for a LVDC distribution feeder in a light rail system. In other words, based on the characteristics of the fault current for ground resistance and fault location, this paper proposes an optimal operation algorithm of a selective relay to properly identify the fault current compared to the load current in a light rail system. In addition, this paper modelled the distribution system including AC/DC converter using a PSCAD/EMTDC S/W and from the simulation results for a real light rail system, the proposed algorithm was found to be a useful and practical tool to correctly identify the fault current and load current.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.754-762
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• 1995

Strontium titanate(SrTiO$_3$) thin film was prepared on Si substrates by RF magnetron sputtering for a high capacitance density required for the next generation of LSTs. The optimum deposition conditions for SrTiO$_3$thin film were investigated by controlling the deposition parameters. The crystallinity of films and the interface reactions between SrTO$_3$film and Si substrate were characterized by XRD and AES respectively. High quality films were obtained by using the mixed gas of Ar and $O_2$for sputtering. The films were deposited at various bias voltages to obtain the optimum conditions for a high quality file. The best crystallinity was obtained at film thickness of 300nm with the sputtering gas of Ar+20% $O_2$and the bias voltage of 100V. The barrier layer of Pt(100nm)/Ti(50nm) was very effective in avoiding the formation of SiO$_2$layer at the interface between SrTiO$_3$film and Si substrate. The capacitor with Au/SrTiO$_3$/Pt/Ti/SiO$_2$/Si structure was prepared to measure the electric and the dielectric properties. The highest capacitance and the lowest leakage current density were obtained by annealing at $600^{\circ}C$ for 2hrs. The typical specific capacitance was 6.4fF/$\textrm{cm}^2$, the relative dielectric constant was 217, and the leakage current density was about 2.0$\times$10$^{-8}$ A/$\textrm{cm}^2$ at the SrTiO$_3$film with the thickness of 300nm.