• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.318-330
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• 2009

A high heat flux test facility using a graphite heating panel was constructed and is presently in operation at Korea Atomic Energy Research Institute, which is called KoHLT-1. Its major purpose is to carry out a thermal cycle test to verify the integrity of a HIP (hot isostatic pressing) bonded Be mockups which were fabricated for developing HIP joining technology to bond different metals, i.e., Be-to-CuCrZr and CuCrZr-to-SS316L, for the ITER (International Thermonuclear Experimental Reactor) first wall. The KoHLT-1 consists of a graphite heating panel, a box-type test chamber with water-cooling jackets, an electrical DC power supply, a water-cooling system, an evacuation system, an He gas system, and some diagnostics, which are equipped in an authorized laboratory with a special ventilation system for the Be treatment. The graphite heater is placed between two mockups, and the gap distance between the heater and the mockup is adjusted to $2{\sim}3\;mm$. We designed and fabricated several graphite heating panels to have various heating areas depending on the tested mockups, and to have the electrical resistances of $0.2{\sim}0.5$ ohms during high temperature operation. The heater is connected to an electrical DC power supply of 100 V/400 A. The heat flux is easily controlled by the pre-programmed control system which consists of a personal computer and a multi function module. The heat fluxes on the two mockups are deduced from the flow rate and the coolant inlet/out temperatures by a calorimetric method. We have carried out the thermal cycle tests of various Be mockups, and the reliability of the KoHLT-1 for long time operation at a high heat flux was verified, and its broad applicability is promising.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• Applied Chemistry for Engineering
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• v.19 no.3
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• pp.270-276
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• 2008

$N_2$ doped $TiO_2$ nano-sized powder was prepared using a DC arc plasma jet and investigated with XRD, BET, SEM, TEM, and photo-catalytic decomposition. Recently the research interest about the nano-sized $TiO_2$ powder has been increased to improve its photo-catalytic activity for the removal of environmental pollutants. Nitrogen gas, reacting gas, and titanium tetrachloride ($TiCl_4$) were used as the raw materials and injected into the plasma reactor to synthesize the $N_2$ doped $TiO_2$ power. The particle size and XRD peaks of the synthesized powder were analyzed as a function of the flow rate of the nitrogen gas. Also, the characteristics of the photo-catalytic decomposition using the prepared powder were studied. For comparing the photo-catalytic decomposition performance of $TiO_2$ powder with that of $TiO_2$ coating, $TiO_2$ thin films were prepared by the spin coating and the pulsed laser deposition. For the results of the acetaldehyde decomposition, the photo-catalytic activity of $TiO_{2-x}N_x$ powder was higher than that of the pure $TiO_2$ powder in the visible light region. For the methylene blue decomposition, the decomposition efficiency of $TiO_2$ powder was also higher than that of $TiO_2$ film.