• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 1998.11a
• /
• pp.55-56
• /
• 1998

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.11a
• /
• pp.94-97
• /
• 1997

We investigated the sheet resistance properties of tungsten nitride thin films deposited by RF and DC sputtering system. It deposited at various conditions that determine the sheet resistance. The properties of the sheet resistance of these films were measured under various conditions. Sheet resistance analysed under the flow rate of the argon gas and contents of nitrogen from nitrogen-argon gas mixtures. We found that these sheet resistance were largely depend on the temperature of substrate, gas flow rate and RF power. Very high and low sheet resistance of tungsten films obtained by DC sputtering. As the increase of contents of nitrogen gas obtained from nitrogen-argon gas mixture, tungsten nitride thin films deposited by the reactive DC sputtering and the sheet resistance of these films were increased.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2008.11a
• /
• pp.45-46
• /
• 2008

Hard coatings of TiN which exhibit a large variation in their electrical resistivities, have been prepared in magnetron sputtering system using bipolar pulsed DC generator. TiN coatings have also been prepared using a DC generator in the same sputtering system under identical deposition conditions. Microstructural, Mechanical, Crystallographic properties of TiN films using continuous and bipolar pulsed DC generators were examined. Field emission scanning microscope and Nanoindenter have been used to characterize the coatings.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.96-97
• /
• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.100-100
• /
• 2000

Aluminium oxide (Al2O3) films have been investigated for many applications such as insulating materials, hard coatings, and diffusion barriers due to their attractive electrical and mechanical properties. In recent years, application of Al2O3 films for dielectric materials in integrated circuits as gates and capacitors has attracted much attention. Various deposition techniques such as sol-gel, metalorganic decomposition (MOD), sputtering, evaporation, metalorganic chemical vapor deposition (MOCVD), and pulsed laser ablation have been used to fabricate Al2O3 thin films. Among these techniques, reactive sputtering has been widely used due to its high deposition rate and easy control of film composition. It has been also reported that the sputtered Al2O3 films exhibit superior chemical stability and mechanical strength compared to the films fabricated by other processes. In this study, Al2O3 thin films were deposited on Pt/Ti/SiO/Si2 and Si substrates by DC reactive sputtering at room temperature with variation of the Ar/O2 ratio in sputtering ambient. Crystalline phase of the reactively sputtered films was characterized using X-ray diffractometry and the surface morphology of the films was observed with Scanning election microscopy. Effects of Th Ar/O2 ratio characteristics of Al2O3 films were investigated with emphasis on the thickness dependence of the dielectric properties. Correlation between the dielectric properties and the microstructure was also studied

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.4
• /
• pp.751-755
• /
• 2007

We have studied the variable conditions of reactive sputtering to prepare AM thin film. The leakage current showed below $10^{-9}A/cm^2$ at the deposition temperature of $250^{\circ}C\;and\;300^{\circ}C$ in the field of 0.1 MV/cm, and it was gradually increased and to be saturated in 0.2 MV/cm. The C-V characteristics of the above mentioned deposition temperature conditions showed a deep depletion phenomenon at inversion region. The C-V characteristics showed similarly under the DC power conditions of 100 and 150 W but were degraded at 200W. When the DC power was 100, 200, and 300 W the dielectric breakdown phenomenon was shown in 2.8, 3.2 and 5.2 MV/cm, respectively. It was found that AIN film was dominated by Poole-Frenkel conduction mechanism.

• Journal of Korean Vacuum Science & Technology
• /
• v.3 no.2
• /
• pp.130-133
• /
• 1999

Paraelectric ZrTiO4 thin films were synthesized on a Si(100) substrate using DC magnetron reactive sputtering. Films deposited above-400$^{\circ}C$ exhibited crystalline characteristics. The dielectric constants ($\varepsilon$) and dielectric losses (tan$\delta$) of as-deposited and annealed films were measured in the 1 MHz range using a Pt upper electrode and a phosphorous-doped si bottom electrode. Preliminary data showed that as the deposition temperature increased, the dielectric losses decreased while the dielectric constants did not change significantly. similar trends for dielectric losses were observed when the as-deposited samples were annealed at 800$^{\circ}C$. The reduction of dielectric losses at high-deposition temperatures and post annealing correlated well with the x-ray diffraction peak widths.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2015.11a
• /
• pp.299-300
• /
• 2015

$TiO_2$는 내구성이 뛰어난 전기변색재료로 연구가 이루어 지고 있다. 큰 굴절율로 인해 높은 투과율을 보이는 $TiO_2$는 변색시 치밀한 구조를 가지기 때문에 전해질 양이온의 침입이 힘들어 변색효율이 $WO_3$에 비해 좋지 않다. 이를 개선하고자 작업압력을 변화시켜 기판에 입사하는 입자의 에너지를 줄임으로써 확산을 줄이고 Porous한 막을 얻고자 하였다. 작업압력이 높아짐에 따라 표면의 거칠기가 커지는 것을 확인하였고 전기변색시 효율이 커지는 것을 확인하였다.

• Journal of the Korean institute of surface engineering
• /
• v.37 no.3
• /
• pp.169-174
• /
• 2004

MgO thin films were reactively deposited using an internal inductively coupled plasma assisted sputtering method varying reactive gas ratio to get stoichiometric film composition, and bipolar dc substrate bias to suppress micro arcs. The minimum frequency required for arc suppression was about 10KHz depending on ICP power. Their crystallinity was analyzed using X-ray diffraction and surface morphology using AFM. The surface was very smooth with rms roughness less than 0.42nm. The preferred orientation of the films were changing from (200) to bulk-like characteristics as Ar: $O_2$ratio was controlled to 10 : 2. Optical emission spectroscopy revealed that there were two distinct discharge modes: a blue one and a green one, where enhanced emission from Ar and Mg were observed. This cannot simply be understood by metallic or oxide mode of reactive sputtering due to ICP coupled to magnetron discharge.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1999.11a
• /
• pp.25-25
• /
• 1999