• ETRI Journal
• /
• v.36 no.3
• /
• pp.352-360
• /
• 2014

This paper presents a 900 MHz zero-IF RF transceiver for IEEE 802.15.4g Smart Utility Networks OFDM systems. The proposed RF transceiver comprises an RF front end, a Tx baseband analog circuit, an Rx baseband analog circuit, and a ${\Delta}{\Sigma}$ fractional-N frequency synthesizer. In the RF front end, re-use of a matching network reduces the chip size of the RF transceiver. Since a T/Rx switch is implemented only at the input of the low noise amplifier, the driver amplifier can deliver its output power to an antenna without any signal loss; thus, leading to a low dc power consumption. The proposed current-driven passive mixer in Rx and voltage-mode passive mixer in Tx can mitigate the IQ crosstalk problem, while maintaining 50% duty-cycle in local oscillator clocks. The overall Rx-baseband circuits can provide a voltage gain of 70 dB with a 1 dB gain control step. The proposed RF transceiver is implemented in a $0.18{\mu}$ CMOS technology and consumes 37 mA in Tx mode and 38 mA in Rx mode from a 1.8 V supply voltage. The fabricated chip shows a Tx average power of -2 dBm, a sensitivity level of -103 dBm at 100 Kbps with PER < 1%, an Rx input $P_{1dB}$ of -11 dBm, and an Rx input IP3 of -2.3 dBm.

• Journal of Korea Multimedia Society
• /
• v.10 no.1
• /
• pp.49-57
• /
• 2007

Recently, CMOS RF integration has been widely explored in the wireless communication area to save cost, power, and chip area. The direct conversion architecture, rather than a more conventional super-het-erodyne, has been an attractive choice for single-chip integration because of its many advantages. However, the direct conversion architecture has several fundamental problems to solve in achieving performance comparable to a super-heterodyne counterpart. In this paper, we describe a programmable filter for mobile communication terminals using a direct conversion architecture. The proposed filter can be implemented with the active-RC filter and programmed to meet the requirements of different communication standards, including GSM, DECT and WCDMA. The filter can be tuned to select a detail frequency by changing the gate voltage of the MOS resistors. The gain of the proposed architecture can be programmed from 27dB to 72dB using the filter gain and VGA in 3dB steps.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.8
• /
• pp.48-53
• /
• 2008

In this paper, we developed the MMIC low noise amplifier using 100 nm metamorphic HEMTs technology in combination with coplanar circuit topology for 94 GHz applications. The $100nm\times60{\mu}m$ MHEMT devices for the MMIC LNA exhibited DC characteristics with a drain current density of 655 mA/mm, an extrinsic transconductance of 720 mS/mm. The current gain cutoff frequency $(f_T)$ and maximum oscillation frequency $(f_{max})$ were 195 GHz and 305 GHz, respectively. The realized MMIC LNA represented $S_{21}$ gain of 14.8 dB and noise figure of 4.6 dB at 94 GHz with an over-all chip size of $1.8mm\times1.48mm$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.22 no.1
• /
• pp.76-80
• /
• 2011

This paper has proposed a 3~5 GHz low-power and wideband LNA(Low Noise Amplifier), which has been implemented in a 0.18-${\mu}m$ CMOS technology. The proposed LNA has basically the noise-cancelling topology to achieve a balun-function, wideband input matching, and relative low noise figure. In addition, it has utilized a 2nd-order LC-band-pass filter(BPF) as its output load to achieve higher power gain and lower noise figure with the lowest dc power consumption among previously reported works. The proposed amplifier consumes only 3.94 mA from a 1.8 V supply voltage. The simulation results show a power gain of more than +17 dB, a noise figure of less than +4 dB, and an input IP3 of -15.5 dBm.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.47 no.2
• /
• pp.74-79
• /
• 2010

We have designed a millimeter-wave passive imaging sensor with multi-horn antenna array. Six horn array antenna is suggested that it is integrated into one housing, and this antenna is effectively configurated m space to assemble with LNA of WR-10 structure. Antenna is designed to have the peak gain of 17.5dBi at the center frequency of 94GHz, and the return loss of less than -25dB in W-band, and the small aperture size of $6mm{\times}9mm$ for antenna configuration with high resolution. LNA is designed to have total gain of more than 55dB and noise figure of less than 5dB for good sensitivity. We made a detector for DC output translation of millimeter-wave signal with zero bias Schottky diode. It is shown that good sensitivity of more than 500mV/mW.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.7 no.1
• /
• pp.53-60
• /
• 1996

The 8W hybrid MIC SSPA has been developed in the frequency range from 14.0 GHz to 14.5 GHz for uplink of KOREASAT's earth station. The whole system was designed of two parts with driving amplifier and high power amplifier to simplify the fabrication process. we reduced weight and volum of power amplifier through arranging the bias circuits in the same housing. The realized SSPA has a small signal gain of $26\pm1dB$within 500 MHz bandwidith, and the input and output return losses are over 7dB and 12dB respectively. The output power of 39.0 ~ 39.2dBm is achieved at the 1dB gain compression point of 14 GHz, 14.25 GHz, and 14.5 GHz. That reveals higher power than 8W of design target. The proposed SSPA manufacture techni- ques in this paper can be applied to the implementation of power amplifiers for some radars and SCPC.

• Journal of the East Asian Society of Dietary Life
• /
• v.16 no.3
• /
• pp.281-291
• /
• 2006

This study investigated the effect of the powder of the small water dropwort(PSWD) and brewer's yeast(BY) on the liver function and serum lipid metabolism in alcohol-consuming rats. Male Sprague-Dawley rats were fed an AIN-93 diet(control), ethanol plus control(A), ethanol plus PSWD(AS), ethanol plus BY(AB), ethanol plus PSWD and BY(ABS) diet for seven weeks. The feed intake, body weight gain and feed efficiency ratio were the lowest and in the alcohol-consuming groups. The weight of the liver, kidney, spleen and epididymis of the anatomized rats showed positive correlation with the body weight gain. Compared with group A, the content of the lipid in the serum was significantly low in the AS and AB groups. In particular, it was the most effective in the AB group. The GOT, GPT and ALP level in the serum showed a significant difference in the alcohol-consuming groups. Compared with the A group, they showed a significantly low difference in the AS and AB groups. The total cholesterol and triglyceride levels in the liver were similar in all groups. The weight of the feces was significantly different but there was no significant difference in the content of total cholesterol and triglyceride levels in the AS and AB groups. These results suggest that BY and PSWD improve the liver function, and had an effect on reducing the lipid content of the serum and feces of alcohol-consumed rats. In particular, the effect of BY which contained protein, dietary fiber and vitamin B was higher than that of PSWD.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.12
• /
• pp.51-59
• /
• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

• Publications of The Korean Astronomical Society
• /
• v.11 no.1
• /
• pp.109-123
• /
• 1996

We have developed a 5GHz continuum receiver system. The receiver is a direct type receiver. In order to reduce the noise due to the fluctuation of the gain in the amplifiers, the system employs the Dicke switching method. We made the 5GHz low-noise amplifier and the bandpass filter. The low-noise amplifier gives ${\sim}35dB$ gain and has ${\sim}210K$ noise temperature. The bandpass filter has a passband between 4.3 and 5.4GHz. We also made switch driver, video amplifiers, phase detector, and integrator. Using a 1.8 meter offset parabolic antenna, we measured the efficiency of the system. Since the antenna does not have a driver to track objects, observations were performed with the antenna fixed. The measured noise temperature of the system is ${\sim}650K$. From the observation of the blank sky, noise level was measured. It was found that the systematic noise(${\sim}0.5K$: peak to peak value) is much larger than the thermal noise. The systematic noise is possibly related to the stability of the DC power supplied to the receiver system. Besides the noise of the system, it was found that the airplanes are the very serious noise sources. We measured the radio flux of the Sun using the developed system. The observed radio flux of the Sun is ${\sim}10^6Jy$, which is close to the known value of the quiet Sun. The test observation of the Sun shows that the angular beam size of the antenna is ${\sim}2.2^{\circ}$.

• Nuclear Engineering and Technology
• /
• v.51 no.5
• /
• pp.1428-1435
• /
• 2019

The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100 MeV phosphorous ($P^{7+}$) and 80 MeV nitrogen ($N^{6+}$) ions on 200 GHz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were examined in the total dose range from 1 to 100 Mrad(Si). The in-situ I-V characteristics like Gummel characteristics, excess base current (${\Delta}I_B$), net oxide trapped charge ($N_{OX}$), current gain ($h_{FE}$), avalanche multiplication (M-1), neutral base recombination (NBR) and output characteristics ($I_C-V_{CE}$) were analysed before and after irradiation. The significant degradation in device parameters was observed after $100MeV\;P^{7+}$ and $80MeV\;N^{6+}$ ion irradiation. The $100MeV\;P^{7+}$ ions create more damage in the SiGe HBT structure and in turn degrade the electrical characteristics of SiGe HBTs more when compared to $80MeV\;N^{6+}$. The SiGe HBTs irradiated up to 100 Mrad of total dose were annealed from $50^{\circ}C$ to $400^{\circ}C$ in different steps for 30 min duration in order to study the recovery of electrical characteristics. The recovery factors (RFs) are employed to analyse the contribution of room temperature and isochronal annealing in total recovery.