• JSTS:Journal of Semiconductor Technology and Science
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• 제4권1호
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• pp.45-51
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• 2004

We have proposed a new shallow trench isolation (STI) process using flowable oxide (F-oxide) chemical vapor deposition (CVD) for DRAM application and it was successfully developed. The combination of F-oxide CVD and HDP CVD is thought to be the superior STI gap-filling process for next generation DRAM fabrication because F-oxide not only improves STI gap-filling capability, but also the reduced local stress by F-oxide in narrow trenches leads to decrease in junction leakage and gate induced drain leakage (GIDL) current. Finally, this process increased data retention time of DRAM compared to HDP STI. However, a serious failure occurred by symphonizing its structural dependency of deposited thickness with poor resistance against HF chemicals. It could be suppressed by reducing the flow time during F-oxide deposition. It was investigated collectively in terms of device yield. In conclusion, the combination of F-oxide and HDP oxide is the very promising technology for STI gap filling process of sub-100nm DRAM technology.

• 대한수학회지
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• 제55권6호
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• pp.1305-1320
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• 2018

We define new generalized factorials in several variables over an arbitrary subset ${\underline{S}}{\subseteq}R^n$, where R is a Dedekind domain and n is a positive integer. We then study the properties of the fixed divisor $d(\underline{S},f)$ of a multivariate polynomial $f{\in}R[x_1,x_2,{\ldots},x_n]$. We generalize the results of Polya, Bhargava, Gunji & McQuillan and strengthen that of Evrard, all of which relate the fixed divisor to generalized factorials of ${\underline{S}}$. We also express $d(\underline{S},f)$ in terms of the images $f({\underline{a}})$ of finitely many elements ${\underline{a}}{\in}R^n$, generalizing a result of Hensel, and in terms of the coefficients of f under explicit bases.

• 대한수학회보
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• 제61권4호
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• pp.959-968
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• 2024

Suppose f belongs to the Bloch space with f(0) = 0. For 0 < r < 1 and 0 < p < ∞, we show that $$M_p(r,\,f)\,=\,({\frac{1}{2\pi}}{\int_{0}^{2\pi}}\,{\mid}f(re^{it}){\mid}^pdt)^{1/p}\,{\leq}\,({\frac{{\Gamma}(\frac{p}{2}+1)}{{\Gamma}(\frac{p}{2}+1-k)}})^{1/p}\,{\rho}{\mathcal{B}}(log\frac{1}{1-r^2})^{1/2},$$ where ρʙ(f) = sup_z∈ⅅ(1 - |z|²)|f'(z)| and k is the integer satisfying 0 < p - 2k ≤ 2. Moreover, we prove that for 0 < r < 1 and p > 1, $${\parallel}f_r{\parallel}_{B_q}\,{\leq}\,r\,{\rho}{\mathcal{B}}(f)(\frac{1}{(1-r^2)(q-1)})^{1/q},$$ where f_r(z) = f(rz) and ||·||ʙ_q is the Besov seminorm given by ║f║ʙ_q = (∫_𝔻 |f'(z)|^q(1-|z|²)^q-2dA(z)). These results improve previous results of Clunie and MacGregor.

• Kyungpook Mathematical Journal
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• 제58권3호
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• pp.481-488
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• 2018

Let I be a ${\ast}$-ideal on a 2-torsion free ${\ast}$-prime ring and $F:R{\rightarrow}R$ a generalized derivation with an associated derivation $d:R{\rightarrow}R$. The aim of this paper is to explore the condition under which generalized derivation F becomes a left centralizer i.e., associated derivation d becomes a trivial map (i.e., zero map) on R.

• 대한수학회논문집
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• 제33권4호
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• pp.1141-1158
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• 2018

Hahn difference operator $D_{q,{\omega}}$ which is defined by $$D_{q,{\omega}}g(t)=\{{\frac{g(gt+{\omega})-g(t)}{t(g-1)+{\omega}}},{\hfill{20}}\text{if }t{\neq}{\theta}:={\frac{\omega}{1-q}},\\g^{\prime}({\theta}),{\hfill{83}}\text{if }t={\theta}$$ received a lot of interest from many researchers due to its applications in constructing families of orthogonal polynomials and in some approximation problems. In this paper, we investigate sufficient conditions for stability of the abstract linear Hahn difference equations of the form $$D_{q,{\omega}}x(t)=A(t)x(t)+f(t),\;t{\in}I$$, and $$D^2{q,{\omega}}x(t)+A(t)D_{q,{\omega}}x(t)+R(t)x(t)=f(t),\;t{\in}I$$, where $A,R:I{\rightarrow}{\mathbb{X}}$, and $f:I{\rightarrow}{\mathbb{X}}$. Here ${\mathbb{X}}$ is a Banach algebra with a unit element e and I is an interval of ${\mathbb{R}}$ containing ${\theta}$.

• 대한수학회지
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• 제54권6호
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• pp.1733-1757
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• 2017

Let $R={\oplus}_{{\alpha}{\in}{\Gamma}}R_{\alpha}$ be an integral domain graded by an arbitrary torsionless grading monoid ${\Gamma}$, ${\bar{R}}$ be the integral closure of R, H be the set of nonzero homogeneous elements of R, C(f) be the fractional ideal of R generated by the homogeneous components of $f{\in}R_H$, and $N(H)=\{f{\in}R{\mid}C(f)_v=R\}$. Let $R_H$ be a UFD. We say that a nonzero prime ideal Q of R is an upper to zero in R if $Q=fR_H{\cap}R$ for some $f{\in}R$ and that R is a graded UMT-domain if each upper to zero in R is a maximal t-ideal. In this paper, we study several ring-theoretic properties of graded UMT-domains. Among other things, we prove that if R has a unit of nonzero degree, then R is a graded UMT-domain if and only if every prime ideal of $R_{N(H)}$ is extended from a homogeneous ideal of R, if and only if ${\bar{R}}_{H{\backslash}Q}$ is a graded-$Pr{\ddot{u}}fer$ domain for all homogeneous maximal t-ideals Q of R, if and only if ${\bar{R}}_{N(H)}$ is a $Pr{\ddot{u}}fer$ domain, if and only if R is a UMT-domain.

• 대한수학회보
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• 제42권4호
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• pp.679-690
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• 2005

Let K be a commutative ring with unity, R a prime K-algebra of characteristic different from 2, d a non-zero derivation of R, I a non-zero right ideal of R, f($x_1,{\cdots},\;x_n$) a multilinear polynomial in n non-commuting variables over K, a $\in$ R. Supppose that, for any $x_1,{\cdots},\;x_n\;\in\;I,\;a[d(f(x_1,{\cdots},\;x_n)),\;f(x_1,{\cdots},\;x_n)]$ = 0. If $[f(x_1,{\cdots},\;x_n),\;x_{n+1}]x_{n+2}$ is not an identity for I and $$S_4(I,\;I,\;I,\;I)\;I\;\neq\;0$$, then aI = ad(I) = 0.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1154-1157
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• 2006

Organic thin-film transistors (OTFTs) based on a semiconducting polymer have been fabricated using an organic patterning methodology. Laser assisted lift-off (LALO) technique, ablating selectively the hydrophobic layer by an excimer laser, was used for producing a semiconducting polymer channel in the OTFT with high resolution. The selective wettability of a semiconducting polymer, poly (9-9-dioctylfluorene-co-bithiophene) (F8T2), dissolved in a polar solvent was found to define precisely the pattering resolution of the active channel. It is demonstrated that in the F8T2 TFTs fabricated using the LALO technique and is applicable for the larger area display.

• 한국광과학회:학술대회논문집
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• 한국광과학회 1996년도 학술대회지
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• pp.20-20
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• 1996

• 한국추진공학회지
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• 제9권4호
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• pp.31-38
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• 2005

본 연구에서는 단일 포트 연료 형상을 갖는 하이브리드 추진 시스템의 고체 연료의 L/D(길이/직경)비 변화에 따른 연소 특성을 고찰하였다. 본 연구를 위해 연료 포트 직경이 같은 경우와 연료 길이가 같은 경우로 나누어 L/D 비 변화에 관한 실험을 수행하였다 연료 포트 직경이 같은 경우 L/D 비 변화에 따른 후퇴율은 큰 차이가 없었으며 L/D 비가 클수록 O/F 비는 낮았고 추력과 특성속도는 높았다. 연료 길이가 같은 경우 L/D 비 변화에 따른 O/F 비와 추력, 특성속도는 큰 차이가 없었으며 L/D 비가 작을수록 후퇴율은 높았다. O/F 비의 변화가 없을 경우 $\dot{r}=a{G_0}^n$에서 지수 n은 0.5의 값을 갖는 것을 실험적으로 얻을 수 있었다. PE와 기체산소를 본 실험의 연료와 산화제로 사용하였다.