• Proceedings of the KSRS Conference
• /
• 2002.10a
• /
• pp.448-453
• /
• 2002

Remote sensing technology is one of the most powerful tools for human to know the nature and their living environment. However, before microwave remote sensing was developed and applied, remote sensing application was limited strongly by weather and time. Microwave remote sensing technology solves the problem. It makes us to have the capability to acquire information at all time of the day and under all weather condition, and make remote sensing technology be used in more wider area. Microwave remote sensing system include mainly Synthetic Aperture Radar (SAR), Microwave Radiometer, Microwave Scatterometer, and Altimeter (ALT). As SAR can acquire image whose spatial resolution is similar with visible and infrared image, it is paying much attention to and playing a more and more important role in earth observation. In recent year, the development of new SAR technology (multi-band and multi-polarization technology, InSAR technology, D-InSAR technology, and so on) makes SAR remote sensing go to an new stage, and its application area become more and more widely. The first Synthetic Aperture Radar (SAR) in the world appeared in 1960. After that, SAR and its application all developed very fast. Some radar satellites launched and run (include Seasat-A in 1978, ERS-1 in 1991, JERS-1 in 1992, Radarsat in 1995, and so on) promote SAR research and application in world greatly. China began to develop its SAR sensor and research SAR application in 1970s. After more than 30 years' research, it get some important development in sensor development data processing method, and application. Some operational systems have been used and play an important role. This paper will introduce the development of SAR technology and its application in China.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.594-597
• /
• 1999

The new green and red phosphors for PDP application activated by T $b^{3+}$ and E $u^{3+}$ were synthesized, and their photoluminance properties were investigated. It was found that the brightness of $Al_3$Gd $B_4$ $O_{12}$ :T $b^{3+}$ green phosphor under 147nm VUV irradiation was higher than that of commercial Z $n_2$ $SiO_4$:M $n^{2+}$ phosphor. But the emitting intensity of A1$_3$Gd $B_4$ $O^{12}$ :E $u^{3+}$ red phosphor was inferior to the commercial (Y,Gd)B $O_3$:E $u^{3+}$. $Al_3$Gd $B_4$ $O_{12}$ Phosphor had a strong excitation band at 160nm associated with the host absorption, and also the photoluminance excitation intensity of $Al_3$Gd $B_4$ $O_{12}$ :T $b^{3+}$ was higher than that of Z $n_2$ $SiO_4$:M $n^{2+}$, but the intensity of $Al_3$Gd $B_4$ $O_{12}$ :E $u^{3+}$ phosphor was smaller than (Y,Gd)B $O_3$:E $u^{3+}$ phosphor In the VUV range. C $e^{3+}$ co-doping in A1$_3$Gd $B_4$ $O^{12}$ :E $u^{3+}$ and substitution of $Al^{3+}$ by G $a^{3+}$ A1$_3$Gd $B_4$ $O^{12}$ :E $u^{3+}$ phosphor were tried, but they did not improved the optical property .d the optical property .ty .

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.9
• /
• pp.546-551
• /
• 2016

$SrSnO_3:Tb^{3+}$ phosphor thin films were prepared on sapphire and quartz substrates in the growth temperature range of $100{\sim}400^{\circ}C$ by using the radio frequency magnetron sputtering deposition. The resulting $SrSnO_3:Tb^{3+}$ thin films were characterized by X-ray diffraction, scanning electron microscopy, ultraviolet-visible-infrared spectrophotometer, and photoluminescence spectrometer. The results indicated that the morphology, optical transmittance, band gap energy, and luminescence intensity of the phosphor thin films significantly depended on the growth temperature. All the thin films, regardless of the type of substrate, showed an amorphous behavior. As for the thin films deposited on sapphire substrate, the maximum crystallite size was obtained at a growth temperature of $400^{\circ}C$ and the strongest emission was green at 544 nm arising from the $^5D_4{\rightarrow}^7F_5$ transition of Tb3+. The average optical transmittance for all the thin films grown on sapphire and quartz substrates was decreased as the growth temperature increased from 100 to $400^{\circ}C$. The results suggest that the optimum growth temperatures for depositing highly-luminescent $SrSnO_3:Tb^{3+}$ phosphor thin films on sapphire and quartz substrates are 400 and $300^{\circ}C$, respectively.

• Polymer(Korea)
• /
• v.37 no.6
• /
• pp.736-743
• /
• 2013

Novel carbazole based copolymers were synthesized by Suzuki coupling polymerization. (Diphenylene)vinylene and n-octyl was introduced to carbazole as pendants for reducing band gap and improving solubility, respectively. Thermal, photoluminescence and electro-luminescence of copolymers were studied for applying the emitting layer of polymer light emitting diode (PLED). Maximum UV-vis absorption and photoluminescence (PL) emission wavelength of copolymers showed 333~340 nm and 409~464 nm in solution state, respectively. The relative quantum yield using 9,10-diphenylanthracene as a reference was 25.8%. These copolymers exhibited high thermal stability ($T_d$ = $350^{\circ}C$) and good film forming ability. Good luminance was obtained at voltages lower than 8 V and the onset voltage was observed at 4.0 V.

• Land and Housing Review
• /
• v.2 no.4
• /
• pp.407-413
• /
• 2011

This paper reports a novel structural health monitoring (SHM) technique for detecting de-bonding between a concrete beam and CFRP (Carbon Fiber Reinforced Polymer) sheet that is attached to the concrete surface. To achieve this, a multi-scale actuated sensing system with a self-sensing circuit using piezoelectric active sensors is applied to the CFRP laminated concrete beam structure. In this self-sensing based multi-scale actuated sensing, one scale provides a wide frequency-band structural response from the self-sensed impedance measurements and the other scale provides a specific frequency-induced structural wavelet response from the self-sensed guided wave measurement. To quantify the de-bonding levels, the supervised learning-based statistical pattern recognition was implemented by composing a two-dimensional (2D) plane using the damage indices extracted from the impedance and guided wave features.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.9-10
• /
• 2010

Since the discovery of graphene by mechanical exfoliation from graphite[1], various fabrication methods are available today such as chemical exfoliation, epitaxial graphene on SiC substrates, etc. In view of industrialization, the mechanical exfoliation method may not be an option. Epitaxial graphene on SiC substrates, in this respect, is by far more practical because the method consists of conventional thermal treatments familiar to semiconductor industry. Still, the use of the SiC substrate itself, and hence the incompatibility with the Si technology, lessens the importance of this technology in its future industrialization. In this context, we have tackled the problem of forming graphene on Si substrates (GOS). Our strategy is to form an ultrathin (~80 nm) SiC layer on top of a Si substrate, and to graphitize the top SiC layers by a vacuum annealing. We have actually succeeded in forming the GOS structure [2,3,4]. Raman-scattering microscopy indicates presence of few-layer graphene (FLG) formed on our annealed SiC/Si heterostructure, with the G ($1580\;cm^{-1}$) and the G'($2700\;cm^{-1}$) bands, both related to ideal graphene, clearly observed. Presence of the D ($1350\;cm^{-1}$) band indicates presence of defects in our GOS films, whose elimination remains as a challenge in the future. To obtain qualified graphene films on Si substrate, formation of qualified SiC films is crucial in the first place, and is achieved by tuning the growth parameters into a process window[5]. With a potential for forming graphene films on large-scale Si wafers, GOS is a powerful candidate as a key technology in bringing graphene into silicon technology.

• Journal of Navigation and Port Research
• /
• v.32 no.10
• /
• pp.799-804
• /
• 2008

In the paper, a dual-bandpass filter for ship's wireless LAN has proposed, which was designed by using step stub in compliance with 2.4 GHz and 5.2 GHz band The dual-bandpass filter can be designed by adjusting the sizes of the step stub in compliance with the frequency bands of 2.4 GHz and 5.2 GHz, which has the improved performance compared with the existing dual-bandpass filter. Furthermore, dual-bandpass filter using step stub has better efficiency. The measured results for the fabricated dual-bandpass filters agreed well with the simulated ones, and hence it was confirmed that the proposed design method is valid.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.167-170
• /
• 2004

The stochiometric mix of evaporating materials for the $CuGaT_2$ single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuGaTe_2$ polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were 6.025 ${\AA}$ and 11.931 ${\AA}$, respectively. To obtain the single crystal thin films, $CuGaTe_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $670^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is $2.1{\mu}m$. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $CuGaTe_2$ single crystal thin film, we have found that the values of spin orbit coupling ${\Delta}s.o$ and the crystal field splitting ${\Delta}cr$ were $0.079\underline{1}eV$ and $0.246\underline{3}eV$ at 10 K, respectively. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be $0.047\underline{0}eV$ and the dissipation energy of the donor-bound exciton and acceptor-bound exciton to be $0.049\underline{0}eV$, $0.055\underline{8}eV$, respectively.

• Wind and Structures
• /
• v.14 no.6
• /
• pp.517-536
• /
• 2011

The assessment of wind-induced motion plays an important role in the development and design of the majority of today's structures that push the limits of engineering knowledge. A vital part of the design is the prediction of wind-induced tall building motion and the assessment of its effects on occupant comfort. Little of the research that has led to the development of the various international standards for occupant comfort criteria have considered the effects of the low-frequency motion on task performance and interference with building occupants' daily activities. It has only recently become more widely recognized that it is no longer reasonable to assume that the level of motion that a tall building undergoes in a windstorm will fall below an occupants' level of perception and little is known about how this motion perception could also impact on task performance. Experimental research was conducted to evaluate the performance of individuals engaged in a manual tracking task while subjected to low level vibration in the frequency range of 0.125 Hz-0.50 Hz. The investigations were carried out under narrow-band random vibration with accelerations ranging from 2 milli-g to 30 milli-g (where 1 milli-g = 0.0098 $m/s^2$) and included a control condition. The frequencies and accelerations simulated are representative of the level of motion expected to occur in a tall building (heights in the range of 100 m -350 m) once every few months to once every few years. Performance of the test subjects with and without vibration was determined for 15 separate test conditions and evaluated in terms of time taken to complete a task and accuracy per trial. Overall, the performance under the vibration conditions did not vary significantly from that of the control condition, nor was there a statistically significant degradation or improvement trend in performance ability as a function of increasing frequency or acceleration.

• Journal of the Optical Society of Korea
• /
• v.18 no.3
• /
• pp.261-273
• /
• 2014

In this paper, metal insulator metal (MIM) plasmonic slot cavity narrow band-pass filters (NBPFs) are studied. The metal and dielectric of the structures are silver (Ag) and air, respectively. To improve the quality factor and attenuation range, two novel NBPFs based on tapered structures and double cavity systems are proposed and numerically analyzed by using the two-dimensional (2-D) finite difference time domain (FDTD) method. The impact of different parameters on the transmission spectrum is scrutinized. We have shown that increasing the cavities' lengths increases the resonance wavelength in a linear relationship, and also increases the quality factor, and simultaneously the attenuation of the wave transmitted through the cavities. Furthermore, increasing the slope of tapers of the input and output waveguides decreases attenuation of the wave transmitted through the waveguide, but simultaneously decreases the quality factor, hence there should be a trade-off between loss and quality factor. However, the idea of adding tapers to the waveguides' discontinuities of the simple structure helps us to improve the device total performance, such as quality factor for the single cavity and attenuation range for the double cavity. According to the proposed NBPFs, two, three, and four-port power splitters functioning at 1320 nm and novel ultra-compact two-wavelength and triple-wavelength demultiplexers in the range of 1300-1550 nm are proposed and the impacts of different parameters on their performances are numerically investigated. The idea of using tapered waveguides at the structure discontinuities facilitates the design of ultra-compact demultiplexers and splitters.