• 대한전기학회논문지:시스템및제어부문D
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• 제52권5호
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• pp.295-304
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• 2003

In this paper, we proposed a hardware-oriented Genetic Algorithm Processor(GAP) based on subpopulation architecture for high-performance convergence and reducing computation time. The proposed architecture was applied to enhancing population diversity for correspondence to premature convergence. In addition, the crossover operator selection and linear ranking subpop selection were newly employed for efficient exploration. As stochastic search space selection through linear ranking and suitable genetic operator selection with respect to the convergence state of each subpopulation was used, the elapsed time of searching optimal solution was shortened. In the experiments, the computation speed was increased by over $10\%$ compared to survival-based GA and Modified-tournament GA. Especially, increased by over $20\%$ in the multi-modal function. The proposed Subpop GA processor was implemented on FPGA device APEX EP20K600EBC652-3 of AGENT 2000 design kit.

• 전자공학회논문지D
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• 제36D권5호
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• pp.63-68
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• 1999

본 논문에서는 저압 유기 금속 화학증착법으로 성장시킨 GaN박막들을 실온 케소드루미네슨스 방법으로 광학적 특성을 측정하여 결정성장 메커니즘과 광학적 특성과의 관계를 규명하였다. 관측된 스펙트럼은 주로 364nm의 강한 band-edge emission 피크와 550nm의 깊은 준위 피크이었다. 빔 전류의 증가에 따라 364nm 스펙트럼의 세기가 깊은 준위 발광 스펙트럼보다 크게 증가시켰다. 이는 성장 초기 GaN박막의 결정 결함이 깊은 준위 발광 스펙트럼과 깊은 관계가 있음을 나타내 주고 있다. 또한 미세 결정 구조와 깊은 준위 발광 스펙프럼과의 관계 분석을 위해 주사형 전자현미경 사진과 캐소드루미네슨스 스펙트럼을 비교 검토하였다.

• Journal of Ginseng Research
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• 제26권1호
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• pp.17-23
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• 2002

Gibberellic acid (GA) was applied to field-grown 3-year-old North American ginseng (Panax quinqueiolius L.) between 1 and 4 times, before and during bloom in 1999. Applications of both GA$_3$ and GA$\sub$4+7/ four times (x4) to the developing inflorescences increased maximum pedicel length, and seed head diameter and height. Treatment with GA$\sub$4+7/ increased mean and total root fresh weight linearly, whereas those treated with GA$_3$ did not show similar increases. Both GA$_3$ and GA$\sub$4+7/ at 50, 100 and 200 mg L$\^$-1/ (x4) increased the incidence of breaking of dormancy of perennating buds with GA$_3$ being twice as effective as GA$\sub$4+7/. Both GA$_3$ and GA$\sub$4+7/ treatments resulted in an increased number of new bud initials forming per root, with the number of new initials per root increased two-fold by the GA$_3$ sprays compared to GA$\sub$4+7/.

• 한국통신학회논문지
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• 제11권3호
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• pp.153-163
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• 1986

III-V족 복합물 반도체인 GaAs를 이용한 초고속소자는 DBS(Direct Broadcast Satellite), 광통신, microwave 및 digital 집적회로에 널리 사용되낟. 이와 같은 GaAS를 substrate재료로 D/E MESFET'S을 이용한 4Kx4bit SRAM, HEMT'S에 의한 4K bit SRAM과 X-band용 수신기전단부의 MMIC화가 보고되였고, 3차원적인 광집적회로의 연구도 가까운 장래에 완성될 것이다. 본 논문에서는 현재까지 널리 사용되어온 GaAs반도체 재료, 제조공정기술, 소자응용과 집적회로 설계면을 고찰 검토한다. 마지막으로 초고속소자의 전망을 논의한다.

• 한국표면공학회지
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• 제43권4호
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• pp.176-179
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• 2010

The InAs thin films were grown on GaAs(100) substrate with $2^{\circ}C$ tilted toward [$0\bar{1}\bar{1}$] with different As beam equivalent pressure (BEP) by using molecular beam epitaxy. Growth temperature and thickness of the InAs thin films were $480^{\circ}C$ and 0.5 ${\mu}m$, respectively. We studied the relation between the As BEP and the properties of InAs thin films. The properties of InAs thin films were observed by reflection high-energy electron diffraction (RHEED), optical microscope, and Hall effect. The growth, monitored by RHEED, was produced through an initial 2D (2-dimensional) nucleation mode which was followed by a period of 3D (3-dimensional) island growth mode. Then, the 2D growth recovered after a few minutes and the streak RHEED pattern remained clear till the end of growth. The crystal quality of InAs thin films is dependent strongly on the As BEP. When the As BEP is $3.6{\times}10^{-6}$ Torr, the InAs thin film has a high electron mobility of 10,952 $cm^2/Vs$ at room temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.84-85
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• 2008

In this paper, differential cross coupled LC VCOs with two noise frequency filtering techniques are proposed. Both VCOs are based on symmetric capacitor with asymmetric inductor tank structure. The VCO using low pass filtering technique shows low phase noise of -130.40 dBc/Hz at 1 MHz offset when the center frequency is 1.619 GHz. And the other VCO using band pass filtering technique shows -127.93 dBc/Hz at 1 MHz offset frequency when center frequency is 1.604 GHz. Two noise frequency filtering techniques are approached with different target.

• Journal of the Optical Society of Korea
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• 제1권2호
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• pp.100-103
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• 1997

We perform degenerate and nondegenerate pump-probe experiments on bulk GaAs at 100 K below the band gap. We mostly observe a negative differential transmission signal both in the degenerate and nondegenerate experiments. We interpret our signal as due to two-photon absorption. This negative signal has a different origin from the normally considered band gap renormalization for resonant excitations.

• 한국재료학회지
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• 제12권1호
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• pp.54-57
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• 2002

We have grown undoped $In_ xGa_{1-x}N,\; In_xGa_{1-x}N:Si\;and\;In_{0.1}Ga_{0.9}N:Zn$ thin films by MOCVD at temperature between 880 and $710^{\circ}C which endows various In composition in the epilayer from 0.07 to 0.22 as examined using X-ray diffraction, optical absorption(OA), photocurrent (PC) and photoluminescence (PL). The In molar fraction estimated from PL results is higher than that from the OA, PC, and X-ray data for $X{\le}0.22$, which may be caused by phase separation. However, the In molar fraction estimated by X-ray diffraction, OA, PC and PL for $In_xGa_{1-x}N:Si$ does not show discrepancy. With the appropriate Zn doping in undoped $In_{0.1}Ga_{0.9}N$, the emission peak is shifted from 3.15 eV which originates from the band edge emission peak to 2.65 eV which resulted from the conduction band to acceptor transition due to a deep acceptor level.

• 한국산학기술학회논문지
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• 제9권5호
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• pp.1193-1200
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• 2008

본 논문은 질화갈륨 전력 소자를 이용한 이동통신 시스템용 전력증폭기 모듈에 대하여 기술하고 있다. 전치증폭단, 구동증폭단, 그리고 전력증폭단을 각각 설계, 제작하여 그 성능을 측정하고, 이를 바탕으로 통합 모듈을 설계하여 5Watt급 GaN 전력증폭기 모듈을 완성하였다. 하모닉 차단과 ACP를 개선하기 위하여 출력측에 결함접지구조를 삽입하였다. 개발된 질화갈륨 전력증폭기의 성능을 측정한 결과, 2.1GHz대역에서 58dB 이상의 이득, 37bBm 이상의 출력, 50dBc 이상의 하모닉 차단, 2-tone 입력시 35dBc 이상의 IMD3 특성, 그리고 35dBc 이상의 ACP 특성을 얻었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제33회 하계학술대회 초록집
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• pp.237-237
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• 2007