• Journal of Sensor Science and Technology
• /
• v.20 no.1
• /
• pp.30-34
• /
• 2011

Single crystal of KCl doped with $Eu^{2+}$ ions was grown by the Czochralski method in the high pressure Ar gas(purity 99.999 %) atmosphere with chamber pressure from which the crystal with high quality was obtained. As grown $KCl:Eu^{2+}$ crystal was checked by X-ray diffraction. Luminescence properties of KCl:Eu are investigated by laser-excitation spectroscopy under 355 nm excitation at 14 and 295 K. The broad emission band due to the $Eu^{2+}$ 5d $\rightarrow$ 4f transition is peaked at 417 nm with full width at half maximum of about 20 and 30 nm.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.23 no.3
• /
• pp.388-397
• /
• 1999

Numerical simulations are carried out for the magnetic Czochralski single crystal growth system. It Is shown that a magnetic field significantly suppresses the convective flow and as the strength of magnetic field becomes to be stronger, the heat transfer in the melt is dominated by conduction rather than convection. By imposing a cusp magnetic field, the growth interface shape becomes convex toward the melt. When the axial magnetic field is imposed, there occurs an inversion of the interface shape with increase of the magnetic field strength. The oxygen concentration near the interface decreases with increasing cusp magnetic field strength while axial field causes an increase of an oxygen concentration at the central region and decrease of that at the edge of the crystal. The results show that the cusp magnetic field has advantages over an axial magnetic field In the radial uniformity of oxygen as well as in the additional degree of control.

• Journal of the Korean Society for Industrial and Applied Mathematics
• /
• v.4 no.1
• /
• pp.121-131
• /
• 2000

Melt flow, heat and mass transfer of oxygen have been analyzed numerically in the process of Czochralski single crystal growth of silicon under the influence of misaligned cusp magnetic fields. Since the silicon melt in a crucible for crystal growth is of high temperature and of highly electrical-conducting, experimentation method has difficulty in analyzing the behavior of the melt flow. A set of simultaneous nonlinear equations including Navier-Stokes and Maxwell equations has been used for the modelling of the melt flow which can be regarded as a liquid metal. Together with the melt flow which forms the Marangoni convection, a flow circulation is observed near the comer close both to the crucible wall and the free surface. The melt flow tends to follow the magnetic lines instead of traversing the lines. These flow characteristics helps the flow circulation exist. Mass transfer characteristics influenced by the melt flow has been analyzed and the oxygen absorption rate to the crystal has been calculated and turned out to be rather uniform than in the case of an aligned magnetic field.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1996.06b
• /
• pp.239-257
• /
• 1996

$\beta$-BaB2O4는 고출력 가시광선 및 적외선을 발진시키는데 유용한, 비선형 특성을 가진 물질이다. $\alpha$-$\beta$ 상전이 온도가 녹는점보다 18$0^{\circ}C$ 낮기 때문에 보통 flux법으로 단결정을 성장시킨다. 수년전 Itoh등은 $\beta$-BaB2O4단결정을 congruent조성의 용액으로부터 Czochralski법으로 metastable한 상태에서 직접 성장시켰다. 그렇지만 그 공정은 잘 이해되지 않고 있으며 재현하기가 매우 어렵다. 저자들은 $\beta$-BaB2O4단결정을 용액표면온도도 1034$^{\circ}$-1085$^{\circ}C$, pulling rate 3mm/h, 10-30 rpm의 범위에서 성장시켰으며 융액표면의 온도구배는 $\beta$-상으로 성장시키는데 매우 중요한 인자로 여겨진다. Seed로는 직경 1-2mm의 c축방향 $\beta$-BaB2O4단결정 봉이 상용되어 성장방향을 조절하고 열응력을 최소화시켰다. 성장된 $\beta$-상의 단결정들은 6-fold모양을 하며 표면에 작은 비늘같은 것들이 붙어있고 중심부에 core가 있는 것을 알았다. Flux법으로 성장시킨 $\beta$-BaB2O4단결정을 사용한 seeds는 단결정 성장 및 냉각 중에 cracks이 자주 발생하였으며, boule의 cracks은 afterheater를 사용할 경우 다소 줄일 수 있었다. 성장된 단결정의 광학특성이 측정되었다.

• Current Photovoltaic Research
• /
• v.4 no.3
• /
• pp.124-129
• /
• 2016

Recently industry has voiced a need for optimally designing the production process of low-cost, high-quality ingots by improving productivity and reducing production costs with the Czochralski process. Crystalline defect control is important for the production of high-quality ingots. Also oxygen is one of the most important impurities that influence crystalline defects in single crystals. Oxygen is dissolved into the silicon melt from the silica crucible and incorporated into the crystalline a far larger amount than other additives or impurities. Then it is eluted during the cooling process, there by causing various defect. Excessive quantities of oxygen degrade the quality of silicone. However an appropriate amount of oxygen can be beneficial. because it eliminates metallic impurities within the silicone. Therefore, when growing crystals, an attempt should be made not to eliminate oxygen, but to uniformly maintain its concentration. Thus, the control of oxygen concentration is essential for crystalline growth. At present, the control of oxygen concentration is actively being studied based on the interdependence of various factors such as crystal rotation, crucible rotation, argon flow, pressure, magnet position and magnetic strength. However for methods using a magnetic field, the initial investment and operating costs of the equipment affect the wafer pricing. Hence in this study simulations were performed with the purpose of producing low-cost, high-quality ingots through the development of a process to optimize oxygen concentration without the use of magnets and through the following. a process appropriate to the defect-free range was determined by regulating the pulling rate of the crystals.

• Journal of the Korean Ceramic Society
• /
• v.41 no.9
• /
• pp.677-683
• /
• 2004

Nd:LLM (Nd:LiLa(MoO$_4$)$_2$) single crystals for the laser host material were grown by the Czochralski method. The Nd:LLM grown single crystals cracked easily, and the reasons of cracks are generally related with phase transition, incongruent melting, chemical heterogeneity of composition, geometric thermal structures of imbalance and growth direction. We confirmed that phase transition is not observed by TG-DTA thermal analysis, and the XRD analysis revealed congruent melting in our products. It was confirmed that the volatilization of Li$_2$O composition is the important reason of chemical heterogeneity. The geometric thermal profile of the resistance furnace of our own design was controlled with a crucible height. Also, Nd:LLM crystal affected growth direction, and was the best quality in case of (101) growth direction. The distribution and effective distribution coefficient of Nd$^{3+}$ ion were accomplished by PIXE analysis.s.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.18 no.4
• /
• pp.140-145
• /
• 2008

Silicon single crystals are grown by Czochralski (CZ) method in different growing conditions. The different shapes of the crystal-melt interface are obtained with various magnetic fields. Effects of zero-Gauss plane (ZGP) shape and magnetic intensity (MI) on the crystal-melt interface in the crystal experimentally are investigated. The shape of ZGP is not only flat but also parabolic, which is due to magnetic ratio (MR) of the lower to upper current densities in the configurations of the cusp-magnetic fields. As the MR increases, the crystal-melt interface becomes more concave. It means that the hot melt can be easily transported to the crystal-melt interface with increasing the MR. Effective shape of the crystal-melt interface is found to depend on the magnetic field in cusp-magnetic CZ method. The experimental results are compared with other studies and discussed.

• Korean Journal of Crystallography
• /
• v.16 no.2
• /
• pp.141-148
• /
• 2005

It is well known that the general metals have a lot of grain boundaries. The grain boundaries play a negative role to increase the resistivity and to decrease the conductivity. The small resistivity and the large conductivity have been a goal of the material scientists, and no signal noise, perfect signal transfer, and the realization of the real sound are the dream of electronic engineers and audio manias. Generally, oxygen free copper (OFC) and Ohno continuous casting (OCC) copper cables have been used for the purpose of the precise signal transfer and low noise. However they still include a lot of grain boundaries. In our study, we have grown the single crystal by the Czochralski method and succeeded to produce single crystal wires from the crystal in the dimension of $0.5{\times}0.5{\times}2500mm$. The produced wire still possesses very good single crystal properties. We observed the structure of the wire, and measured the resistance and impedance. Glow Discharge Spectrometer (GDS) was used for analyzing the compositions of copper single crystals and commercial copper. Current-Voltage curve, resistance, total harmonic distortion and speaker frequency response were measured for comparing electrical and acoustic properties of two samples.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.12 no.2
• /
• pp.600-604
• /
• 2011

In this paper, the scintillation properties of $LaCl_3:Eu^{2+}$ crystal were investigated as new scintillator. This scintillation material was grown by a Czochralski method. $LaCl_3:Eu^{2+}$ was determined to have a hexagonal $P_63$/m space group with cell parameters a = b = $7.48{\AA}$, c = $4.37{\AA}$. Under 335 nm UV excitation, the crystal shows a broad emission band between 370 nm and 640 nm wavelength range, peaking at 430 nm. At room temperature, the crystal exhibits one exponential decay time component. The component of scintillation time profile of the crystal emission decays with a $2.82{\pm}0.72{\mu}s$ time constant. The energy resolution of the crystal was measured to be 8.8% (FWHM) for $^{137}Cs$ 662 keV ${\gamma}$-rays.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.25 no.3
• /
• pp.111-115
• /
• 2015

$Er^{3+}$ doped $Y_3Al_5O_{12}$ (Er:YAG) single crystals, in which the concentrations of $Er^{3+}$ ion were 5, 7.3, 8, and 10 at.%, were grown by the Czochralski method under nitrogen atmosphere. The <111> oriented Er:YAG single crystals with diameters of up to 50 mm were grown at a pulling rate of 1.0 mm/h and rotation rate of 10 rpm. The thick part of the core region was generated mainly when there was a diameter change during the crystal growth. The concentrations of $Er^{3+}$ ion in the crystals were the same as it was in the melt. $Er^{3+}$ concentration of core region was slightly higher than the other regions in the compositional analysis. The fluorescence lifetime was saturated according to the increase of $Er^{3+}$ doping concentrations.