• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.1
• /
• pp.27-40
• /
• 1997

The heat in Czochralski method is transfered by all transport mechanisms such as convection, conduction and radiation and convection is caused by the temperature difference in the molden pool, the rotations of crystal or crucible and the difference of surface tension. This study delvelops the simulation model of Czochralski growth by using the finite difference method with fixed grids combined with new latent heat treatment model. The radiative heat transfer occured in the surfce of the system is treated by calculating the view factors among surface elements. The model shows that the flow is turbulent, therefore, turbulent modeling must be used to simulate the transport phenomena in the real system applied to 8" Si single crystal growth process. The effects of a cusp magnetic field imposed on the Czochralski silicon melt are studied by numerical analysis. The cusp magnetic field reduces the natural and forced convection due to the rotation of crystal and crucible very effectively. It is shown that the oxygen concentration distribution on the melt/crystal interface is sensitively controlled by the change of the magnetic field intensity. This provides an interesting way to tune the desired O concentration in the crystal during the crystal growing.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1997.10a
• /
• pp.117-121
• /
• 1997

It is shown theoretically that uniform axial dopant concentration distribution can be made throughout the crystal by continuous Czochralski process. Numerical simulation are performed for the transient two-dimensional convection-diffusion model. A typical value of the growth and system parameters for Czochralski growth of p-type, 4 inches silicon crystal was used in the numerical calculations. Using this model with proper model parameter, the axial segregation in batchwise Czochralski growth can be described. It is studied by comparing with the experimental data. With this model parameter, the uniform axial concentration distribution of dopant is predicted in continuous Czochralski process.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.2 no.1
• /
• pp.1-9
• /
• 1992

Radiation heat transfer was calculated for initial stage of crystal growth in Czochralski crystal growth system. View factors among surface elements were calculated for the estimation of heat evolution and all the surfaces were assumed to be diffuse-gray. The values of view factors were greatly different along the position of surface elements. The dissipated amounts of heat flux from the melt surface were 3.6 times larger than those from the crystal surface at the initial stage of crystal growth and this amounts were greater when the surface elements were not considered. The trijunction part of the crystal was greatly affected by the melt surface near the crystal. Consequently radiation heat transfer between surface elements must be considered in order to correctly simulate the initial crystal growth.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1998.09a
• /
• pp.21-25
• /
• 1998

An experimental investigation on flow pattern was carried out in molten Woods metal using an incorporated magnet probe to determine the velocity field in a Woods metal model of Czochralski crystal growth system. The local velocities in Woods metal were obtained 3-dimensionally at numerous positions of large crucible by measuring the voltage induced in the melt. Since there have not been a lot of the model experiments on the velocity distributions in the large size of melt with low Prandtl number for Czochralski crystal growth system, the present paper aims to give useful guidelines for e analysis of fluid flow in Czochralski growth system.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.18 no.4
• /
• pp.137-139
• /
• 2008

Floating zone, neutron transmutation-doped and magnetic Czochralski silicon crystals are being widely used for fabrication power devices. To improve the quality of these devices and to decrease their production cost, it is necessary to use large-diameter wafers with high and uniform resistivity. Recent developments in the crystal growth technology of Czochralski silicon have enable to produce Czochralski silicon wafers with sufficient resistivity and with well-controlled, suitable concentration of oxygen. In addition, using Czoehralski silicon for substrate materials may offer economical benefits, First, Czoehralski silicon wafers might be cheaper than standard floating zone silicon wafers, Second, Czoehralski wafers are available up to diameter of 300 mm. Thus, very large area devices could be manufactured, which would entail significant saving in the costs, In this work, the conventional Czochralski silicon crystals were grown with higher oxygen concentrations using high pure polysilicon crystals. The silicon wafers were annealed by several steps in order to obtain saturated oxygen precipitation. In those wafers high resistivity over $5,000{\Omega}$ cm is kept even after thermal donor formation annealing.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.4 no.4
• /
• pp.356-362
• /
• 1994

We developed a computer controlled Czochralski puller which automated entire crystal growing processes. Crystal weighing technique was employed for an automatic diameter control. The performance of the system was evaluated by the growth of $LiNbO_3$ single crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.20 no.5
• /
• pp.202-206
• /
• 2010

Single crystals of $ZnWO_4$ were grown successfully in the [100], [010] and [001] directions using the Czochralski method. The growth parameters and the formation of slip plane in $ZnWO_4$ crystals were studied. $ZnWO_4$ crystals had a cleavage plane of (010). The dislocation density on the (010) plane at the center of the crystal was lower than that of the edge region. It was inferred that the high density at the edge of the crystals was caused by the thermal gradient during crystal growth. The etch pit arrangement revealed the (100) slip plane to be most active during crystal growth.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.4
• /
• pp.620-626
• /
• 1996

$LiNbO_{3}$ single crystals were grown using a self-designed radio-frequency heating Czochralski crystal grower. Congruently melting composition was used and the optimum growth conditions were established. The compensated power control method was very effective to control the outer diameter of the crystal ingots within ${\pm}5\;%$. Scanning electron microscopy was performed to characterize the effect of the $Mg^{2+}$ ions on the formation of the ferroelectric domain in $LiNbO_{3}$.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.3 no.1
• /
• pp.18-30
• /
• 1993

A numerical analysis has been carried out on the Czochralski flow fields when uniform and nonuniform magnetic fields are applied. Czochralski flow fields are governed by buoyancy forces, thermocapillarity, centrifugal forces, and applied magneic fields. In this analysis, pressure and three components of velocity vectors are obtained, and circumferential electrical currents are calculated. When a uniform magnetic field is applied, all the velocity components are decreased and the circumferential electric currents near the crystal surface are increased as the magnetic field intensity is increased. In the case of a nonuniform field, the flows in a meridional plane are suppressed and the circumferential velocity is increased as the non uniformity is increased. The understanding on the Czochralski flow fields under the influence of magnetic fields can lead to the study on the behavior of the concentration of the solute and impurities.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.4 no.3
• /
• pp.210-222
• /
• 1994

The characteristics of flows, temperatures, and concentrations of oxygen are numerically studies in the Czochralski furnace with a uniform axial magnetic field. Important governing factors to the flow fields include buoyancy, thermocapillarity, centrifugal force, magnetic force, diffusion and segregation coefficients of the oxygen, evaporation coefficient in the form of SiO, and ablation rate of crucible wall. With an assumption that the flow fields have reached the steady state, which means that two velocity components in the meridional plane and circumferential velocity, temperatures, electric current intensity become non-transient, then unsteady concentration field of oxygen has been analyzed with an initially uniform oxygen concentration. Oxygen transports due to convection and diffusion in the Czochralski flow field and oxygen flux through the growing crystal surface has been investigated.