• Journal of information and communication convergence engineering
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• 제14권1호
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• pp.35-39
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• 2016

In this paper, we develop a 94-GHz single balanced mixer with low conversion loss using planar Schottky diodes on a GaAs substrate. The GaAs Schottky diode has a nanoscale anode with a T-shaped disk that can yield high cutoff frequency characteristics. The fabricated Schottky diode with an anode diameter of 500 nm has a series resistance of 21 Ω, an ideality factor of 1.32, a junction capacitance of 8.03 fF, and a cutoff frequency of 944 GHz. Based on this technology, a 94-GHz single balanced mixer was constructed. The fabricated mixer shows an average conversion loss of -7.58 dB at an RF frequency of 92.5 GHz to 95 GHz and an IF frequency of 500 MHz with an LO power of 7 dBm. The RF-to-LO isolation characteristics were greater than -32 dB. These values are considered to be attributed to superior Schottky diode characteristics.

• 대한전기학회논문지:전력기술부문A
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• 제51권10호
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• pp.495-501
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• 2002

A difference based current transformer (CT) saturation detection algorithm uses the third difference of a secondary current to detect the instants of the beginning/end of saturation. The third difference of a secondary current contains high frequency components when a CT is saturated. Thus, an effect of an anti-aliasing lowpass filter implemented in digital protection relays on the detection algorithm should be studied. This paper describes performance analysis of a lowpass filter on the CT saturation detection algorithm. The cutoff frequency of the lowpass filter is normally set to be half of a sampling frequency. In this Paper, two sampling frequencies of 3,840 (Hz) corresponding to 64 sample/cycle (s/c) and 1,920 (Hz) corresponding to 32 (s/c) are studied; the cutoff frequencies of the lowpass filters are set to be 1,920 (Hz), 960 (Hz) and 960(Hz), 480(Hz), respectively. And the proposed algorithm is verified by experiment. A 2nd order Butterworth filter is designed as a lowpass filter. The test results and experiment results clearly indicate that the saturation detection algorithm successfully detects the instants of the beginning/end of saturation even though a secondary current is filtered by the designed lowpass filters.

• 자원리싸이클링
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• 제7권4호
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• pp.50-54
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• 1998

원하는 전자기적 특성인 높은 초투자율과 우수한 주파수 의존특성을 얻기 위해 Mn-Zn 페라이트계에서 핵입자의 첨가효과를 실험하였다. 소결온도에서 가소된 핵입자를 첨가함에 따라 비정상 입자성장이 말끔히 사라졌지만, 페라이트의 소결밀도와 초투자율이 감소하였다. 이와 반대로 매트릭스 입자의 가소온도보다 낮은 온도에서 가소된 핵입자의 첨가시에는 비정상 입자성장이 잔유하였으나, 적정한 핵입자 첨가로 Cutoff Frequency가 변화하지 않는 가운데 10∼20%의 초투자율값의 상승이 있었다.

• 한국산업융합학회 논문집
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• 제25권6_3호
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• pp.1155-1163
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• 2022

This study proposes a technology to ensure the seismic stability of a 1,000 kW diesel engine-type emergency generator by applying a seismic isolated bed system. The technology allows the static analysis by making the first natural frequency of the installed entire emergency generator larger than the earthquake cutoff frequency of 33 Hz. First a three dimensional model for the generator was made with simplification for mode analysis. A new bed system with springs, shock absorbers, stoppers was then devised. Next, The mode analysis for the finite element model equipped by the bed system was performed. the 1^st natural frequency above 33 Hz, the seismic safety cutoff frequency, was calculated to be 152.92 Hz. Finally, based on the seismic stability theory, the von-Mises equivalent stresses derived by structural analysis under the Upset and Faulted conditions were 0.01603 Mpa, and 32.06 Mpa, respectively. so seismic stability was confirmed.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.525-536
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• 2014

Recently, the first generation of mass production of FinFET-based microprocessors has begun, and scaling of FinFET transistors is ongoing. Traditional capacitance and resistance models cannot be applied to nonplanar-gate transistors like FinFETs. Although scaling of nanoscale FinFETs may alleviate electrostatic limitations, parasitic capacitances and resistances increase owing to the increasing proximity of the source/drain (S/D) region and metal contact. In this paper, we develop analytical models of parasitic components of FinFETs that employ the raised source/drain structure and metal contact. The accuracy of the proposed model is verified with the results of a 3-D field solver, Raphael. We also investigate the effects of layout changes on the parasitic components and the current-gain cutoff frequency ($f_T$). The optimal FinFET layout design for RF performance is predicted using the proposed analytical models. The proposed analytical model can be implemented as a compact model for accurate circuit simulations.

• 센서학회지
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• 제30권6호
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• pp.436-440
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• 2021

The impact of the gate length (L_g) on the DC and high-frequency characteristics of indium-rich In_0.8Ga_0.2As channel high-electron mobility transistors (HEMTs) on a 3-inch InP substrate was inverstigated. HEMTs with a source-to-drain spacing (L_SD) of 0.8 ㎛ with different values of L_g ranging from 1 ㎛ to 19 nm were fabricated, and their DC and RF responses were measured and analyzed in detail. In addition, a T-shaped gate with a gate stem height as high as 200 nm was utilized to minimize the parasitic gate capacitance during device fabrication. The threshold voltage (V_T) roll-off behavior against L_g was observed clearly, and the maximum transconductance (g_{m_max}) improved as L_g scaled down to 19 nm. In particular, the device with an L_g of 19 nm with an L_SD of 0.8 mm exhibited an excellent combination of DC and RF characteristics, such as a g_{m_max} of 2.5 mS/㎛, On resistance (R_ON) of 261 Ω·㎛, current-gain cutoff frequency (f_T) of 738 GHz, and maximum oscillation frequency (f_max) of 492 GHz. The results indicate that the reduction of L_g to 19 nm improves the DC and RF characteristics of InGaAs HEMTs, and a possible increase in the parasitic capacitance component, associated with T-shap, remains negligible in the device architecture.

• Journal of Microbiology and Biotechnology
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• 제16권11호
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• pp.1773-1777
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• 2006

We evaluated the usefulness of DNA microarray as a comparative genomics tool, and tested the validity of the cutoff values for defining absent genes in test genomes. Three genome-sequenced E. coli strains (K-12, EDL933, and CFT073) were subjected to comparative genomic hybridization with DNA microarrays covering almost all ORFs of the reference strain K-12, and the microarray results were compared with the results obtained from in silico analyses of genome sequences. For defining the K-12 ORFs absent in test genomes (reference strain-specific ORFs), we applied and evaluated the cutoff level of -1. The average sequence similarity between ORFs, to which corresponding spots showed a log-ratio of>-1, was $96.9{\pm}4.8$. The numbers of spots showing a log-ratio of <-1 (P<0.05, t-test) were 90 (2.5%) and 417 (10.6%) for the EDL933 genome and the CFT073 genome, respectively. Frequency of false negatives (FN) was ca. 0.2, and the cutoff level of -1.3 was required to achieve the FN of 0.1. The average sequence similarity of the false negative ORFs was $77.8{\pm}14.8$, indicating that the majority of the false negatives were caused by highly divergent genes. We concluded that the microarray is useful for identifying missing or divergent ORFs in closely related prokaryotic genomes.

• 한국진공학회지
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• 제12권S1호
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• pp.88-91
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• 2003

Electromagnetic interference shielding and near-infrared cutoff filters for plasma display panel application were designed and fabricated by radio frequency magnetron sputtering. Three types of the filters were prepared: the basic structure of type A consisted of [$TiO_2$ Ti Ag $TiO_2$]; type B, of [$TiO_2$ ITO Ag $TiO_2$]; type C, of [$TiO_2$ ITO Ag ITO $TiO_2$]. Ti and ITO layers deposited on Ag layers were employed as barriers to prevent the oxidation and the diffusion of Ag film into the adjacent oxide layers. Optical, electrical, chemical, and structural properties were investigated, and the result shows that the filters with the ITO barrier layers provided an enhancement in transmittance in the visible owing to a lower absorption of ITO layers than Ti layers. Type C filter showed better optical and electrical performances and smoother surface roughness than Type B and C filters: the average sheet resistance was as low as 1.51 $\Omega\Box$ (where $\square$ stands for a square film), the peak transmittance in the visible was as high as 78.2 %, and the average surface roughness was 1.48 nm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제33회 하계학술대회 초록집
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• pp.81-81
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• 2007

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2019년도 춘계학술논문요약집
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• pp.57-58
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• 2019