• Journal of Power Electronics
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• v.16 no.1
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• pp.66-73
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• 2016

The quantity of alternating current (AC) leakage and the value of distortion factor in capacitor currents are discussed with regard to a new power component called variable capacitance device (VCD). This component has terminals for controlling its capacitance. Nonlinear dielectric characteristics are utilized in this device to vary the capacitance. When VCD operates in an AC circuit, the AC leakage from this device through direct current (DC) control voltage source increases according to the conditions of DC control voltage and so on. To solve this problem, we propose techniques for suppressing AC leakage. Although VCD has strong nonlinear characteristics, the current through the capacitor is not distorted significantly. The relations between AC leakage and the distortion in current waveforms are investigated. An application example for an AC power regulator is also introduced to evaluate the distortion in waveforms.

• Journal of international Conference on Electrical Machines and Systems
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• v.3 no.4
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• pp.422-427
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• 2014

In this paper, simple LED driver is proposed. The proposed driver has simple construction having series capacitor, bridge rectifier, and adjustable regulator IC. Constant current control is possible with the use of TL431Z. The proposed in this paper, current is greater than the rating of the load, the current controller device measures the increased current in the circuit, and turned-on so that the current will be shared. Thus current control device makes the circuit more reliable, longevity as well as increase the luminous efficacy of the LED light. The simulation and experimental results are presented to show the validity of the proposed circuits.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.51 no.1
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• pp.23-33
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• 2002

A hysteresis control is widely used to control output current of inverter. A hysteresis bandwidth is affected by system parameters such as source voltage, device on/off time, load inductance and resistance. The frequency limiter is used to protect switching devices overload. In the conventional hysteresis controller, a lock-out circuit with D-latch and timer is used to device protection circuit. But switching delay time and harmonic components are appeared in output current. In this paper the performance of lock-out circuit is tested, and new circuit for switching device fault protection is proposed ad it's performance is simulated.

• Journal of Magnetics
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• v.16 no.1
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• pp.51-57
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• 2011

A power supply for magnetic-stimulation devices was designed via a control algorithm that involved a start current application based on a resonant converter. In this study, a new power supply for magnetic-stimulation devices was designed by controlling the pulse repetition frequency and pulse width. The power density could be controlled using the start-current-compensation and ZCS (zero-current switching) resonant converter. The results revealed a high-repetition-frequency, high-power magnetic-stimulation device. It was found that the stimulation coil current pulse width and that pulse repetition frequency could be controlled within the range of 200-450 ${\mu}S$ and 200-900 pps, respectively. The magnetic-stimulation device in this study consisted of a stimulation coil device and a power supply system. The maximum power of the stimulation coil from one discharge was 130 W, which was increased to 260 W using an additional reciprocating discharge. The output voltage was kept stable in a sinusoidal waveform regardless of the load fluctuations by forming voltage and current control using a deadbeat controller without increasing the current rating at the starting time. This paper describes this magnetic-stimulation device to which the start current was applied.

• Journal of Magnetics
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• v.19 no.2
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• pp.197-204
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• 2014

A transcranial magnetic stimulation device is a complicated appliance that employs a switching power device designed for discharging and charging a capacitor to more than 1 kV. For a simple transcranial magnetic stimulation device, this study used commercial power and controlled the firing angle using a Triac power device. AC 220V 60 Hz, the power device was used directly on the tanscranial magnetic stimulation device. The power supply device does not require a current limiting resistance in the rectifying device, energy storage capacitor or discharge circuit. To control the output power of the tanscranial magnetic stimulation device, the pulse repetition rate was regulated at 60 Hz. The change trigger of the Triac gate could be varied from $45^{\circ}$ to $135^{\circ}$. The AVR 182 (Zero Cross Detector) Chip and AVR one chip microprocessor could control the gate signal of the Triac precisely. The stimulation frequency of 50 Hz could be implemented when the initial charging voltage Vi was 1,000 V. The amplitude, pulse duration, frequency stimulation, train duration and power consumption was 0.1-2.2T, $250{\sim}300{\mu}s$, 0.1-60 Hz, 1-100 Sec and < 1 kW, respectively. Based on the results of this study, TMS can be an effective method of treating dysfunction and improving function of brain cells in brain damage caused by ischemia.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.2
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• pp.46-53
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• 2022

This paper presents the design and manufacture of a Solid State Relay (SSR) life prediction device that can predict the lifetime of an SSR, which is a key component of a glass forming machine. The lifetime of an SSR is over when the current supplied to the relay is overcurrent (20 A or higher), and the operating time is 100,000 h or longer. Therefore, the life prediction device for the SSR was designed using DSP to accurately read the current and temperature values from the current and temperature sensors, respectively. The characteristic test of the manufactured non-contact relay life prediction device confirmed that the current and temperature were safely measured. Thus, the SSR lifetime prediction device developed in this study can be used to predict the lifetime of an SSR attached to a glass forming machine.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.30 no.1
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• pp.55-65
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• 2016

This paper proposed a new control method which is capable of controlling circulating current considering current capacity of switching device. In the unbalanced voltage conditions, active power and reactive power have double line frequency. Thus, in order to provide active power without ripple, it is necessary to inject the negative sequence current components. However, when the negative current components is injected, it increases the total current flowing in the Arm, and in the Sub-module(SM) the current more than rated is impressed, which leads to destroy the system. Also, in impressing the circulating current reference of each arm, conventional control method impressed applicable $i_{dck}/3$ in the case of balanced voltage conditions. In the case of unbalanced conditions, as arm circulating current of three phase show difference due to the power impressed to each arm, reference of each arm is not identical. In this study, in the case of unbalanced voltage, within permitted current, the control method to decrease the ripple of active power is proposed, through circulating current control and current limitations. This control method has the advantage that calculates the maximum active power possible to generate capacity and impressed the current reference for that much. Also, in impressing circulating current reference, a new control method proposes to impress the reference from calculating active power of each phase. The proposed control method is verified through the simulation results, using the PSCAD/EMTDC.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.28-31
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• 2003

We have investigated the electrical characteristics of the organic light emitting diodes (OLEDs) using the numerical device simulation. The current-voltage characteristics, the charge carrier concentrations, and the recombination rate profiles are presented. The simulation results of the effects of the various device parameters on the device characteristics are discussed.

• Journal of Electrical Engineering and Technology
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• v.8 no.5
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• pp.1157-1162
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• 2013

We proposed AlGaN/GaN high-electron-mobility transistors (HEMTs) using thermal oxidation for NiOx passivation. Auger electron spectroscopy, secondary ion mass spectroscopy, and pulsed I-V were used to study oxidation features. The oxidation process diffused Ni and O into the AlGaN barrier and formed NiOx on the surface. The breakdown voltage of the proposed device was 1520 V while that of the conventional device was 300 V. The gate leakage current of the proposed device was 3.5 ${\mu}A/mm$ and that of the conventional device was 1116.7 ${\mu}A/mm$. The conventional device exhibited similar current in the gate-and-drain-pulsed I-V and its drain-pulsed counterpart. The gate-and-drain-pulsed current of the proposed device was about 56 % of the drain-pulsed current. This indicated that the oxidation process may form deep states having a low emission current, which then suppresses the leakage current. Our results suggest that the proposed process is suitable for achieving high breakdown voltages in the GaN-based devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.931-937
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• 2003

The principle of the superconducting vortex flow transistor (SVFT) is based on control of the Abrikosov vortex flowing along a channel. The induced voltage is controlled by a bias current and a control current, instead of external magnetic field. The device is composed of parallel weak links with a nearby current control line. We explained the process to get an I-V characteristic equation and described the method to induce the external and internal magnetic field by the Biot-Savarts law in this paper. The equation can be used to predict the I-V curves for fabricated device. From the equation we demonstrated that the current-voltage characteristics were changed with input parameters. I-V characteristics were simulated to analyze a SVFT with multi-channel by a computer program.