• Title/Summary/Keyword: Cubic measurement

검색결과 95건 처리시간 0.023초

Measurement of Hydroxyl Radical Density at Bio-Solutions Generated from the Atmospheric Pressure Non-Thermal Plasma Jet

  • Kim, Yong Hee;Hong, Young June;Uhm, Han Sub;Choi, Eun Ha
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.494-494
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    • 2013
  • Atmospheric pressure non-thermal plasma of the needle-typed interaction with aqueous solutions has received increasing attention for their biomedical applications [1]. In this context, surface discharges at bio-solutions were investigated experimentally. We have generated the non-thermal plasma jet bombarding the bio-solution surface by using an Ar gas flow and investigated the emission lines by OES (optical emission spectroscopy) [2]. Moreover, The non-thermal plasma interaction with bio-solutions has received increasing attention for their biomedical applications. So we researched, the OH radical density of various biological solutions in the surface by non-thermal plasma were investigated by Ar gases. The OH radical density of DI water; deionized water, DMEM Dulbecco's modified eagle medium, and PBS; 1x phosphate buffered saline by non-thermal plasma jet. It is noted that the OH radical density of DI water and DMEM are measured to be about $4.33{\times}1016cm-3$ and $2.18{\times}1016cm-3$, respectively, under Ar gas flow 250 sccm (standard cubic centimeter per minute) in this experiment. The OH radical density of buffer solution such as PBS has also been investigated and measured to be value of about $2.18{\times}1016cm-3$ by the ultraviolet optical absorption spectroscopy.

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AgI-based Fast Ionic Conductor의 합성 및 전기적 성질 (Syntheses and Electrical Properties of AgI-based Fast Ionic Conductor)

  • 박성호;안경수;김규홍;최재시
    • 대한화학회지
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    • 제34권6호
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    • pp.527-533
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    • 1990
  • AgI(80 mol%)를 기질로 하여 AgBr 15 mol% + CuI 5mol%, AgBr 10 mol% + CuI 10mol%, AgBr 5 mol% + CuI 5mol%의 계를 제조하여 이들의 이온 전도성을 상온에서 200$^{\circ}C$까지 임피던스분석기(impedance analyzer)를 이용하여 측정한다. 이 온도영역에서 활성화에너지는 0.6∼0.7 eV를 얻을 수 있었으며, 5 mol% AgBr계의 이온 전도성이 가장 컸으며 활성화에너지는 가장 작음을 보였다.

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산소 1기압하에서 합성된 산소결함 Perovskite(CaLa)(MgMn)O$_{5.43}$의 물리화학적 특성연구 (Oxygen-Deficient Perovskite, (CaLa) (MgMn)O5.43 Prepared Under Oxygen Gas Pressure of 1 Bar)

  • 최진호;홍승태;김승준
    • 한국세라믹학회지
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    • 제28권8호
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    • pp.603-610
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    • 1991
  • An oxygen deficient perovskite (CaLa)(MgMn)O5.43, with the cubic unit cell parameter of 3.826$\AA$, was prepared 115$0^{\circ}C$ for 10 hrs under the ambient oxygen gas pressure. The average oxidation state of manganese was determined to be 3.86 by the iodometric titration, so that the perovskite could be formulated as (CaLa) ({{{{ { MgMn}`_{ chi } ^{II } }}{{{{ { Mn}`_{ y} ^{III } }}{{{{ { Mn}`_{1- chi -y } ^{IV } }})O5.43 (2x+y=0.14). From X-ray photoelectron spectroscopy, the manganese ions in the lattice are mostly tetravalent, but two paramagnetic configurations were observed in the EPR spectrum: One sharp isotropic signal with hyperfines (ΔH 50 G, g=1.997$\pm$0.002 and │A│=82(4)$\times$10-4 cm-1) and a broad isotropic one (ΔH 1600 G, g=1.994$\pm$0.002), those which correspond respectively to Mn(II) and Mn(IV) ions. According to the magnetic susceptibility measurement, it follows the Curie-Weiss law from 20 K up to room temperature with $\mu$eff=5.23 $\mu$B, which is relatively larger than spin-only value({{{{ { mu }`_{eff} ^{s.o } }}=4.04 $\mu$B) due to the effect of weak ferromagnetic coupling. Such a result is in accord with a theory of semicovalence exchange.

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Si(100) 기판상에 성장된 3C-SiC의 특성 (Characterization of 3C-SiC grown on Si(100) wafer)

  • 나경일;정연식;류지구;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.533-536
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    • 2001
  • Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of 4.3 $\mu\textrm{m}$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at 1350$^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was 4.3 $\mu\textrm{m}$/hr. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively The 3C-SiC distinct phonons of TO(transverse optical) near 796 cm$\^$-1/ and LO(longitudinal optical) near 974${\pm}$1 cm$\^$-1/ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra(2$\theta$=41.5$^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern

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Si(100)기판상에 성장된 3C-SiC의 결정 특성 (Crystal Characteristics of 3C-SiC Grown on Si(100) Wafers)

  • 정연식;류지구;선주헌;정수용;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
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    • pp.30-34
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    • 2002
  • Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyldisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m$/hr. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

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CVD에 의한 고전력 디바이스용 단결정 3C-SiC 박막 성장 (Growth of Single Crystalline 3C-SiC Thin Films for High Power Devices by CVD)

  • 정귀상;심재철
    • 한국전기전자재료학회논문지
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    • 제23권2호
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    • pp.98-102
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    • 2010
  • This paper describes that single crystalline 3C-SiC (cubic silicon carbide) thin films have been deposited on carbonized Si(100) substrates using hexamethyldisilane (HMDS, $Si_2(CH_3){_6}$) as a safe organosilane single precursor and a nonflammable mixture of Ar and $H_2$ gas as the carrier gas by APCVD at $1280^{\circ}C$. The deposition was performed under various conditions to determine the optimized growth condition. The crystallinity of the 3C-SiC thin film was analyzed by XRD (X-ray diffraction). The surface morphology was also observed by AFM (atomic force microscopy) and voids between SiC and Si interfaces were measured by SEM (scanning electron microscopy). Finally, residual strain and hall mobility was investigated by surface profiler and hall measurement, respectively. From these results, the single crystalline 3C-SiC film had a good crystal quality without defects due to viods, a low residual stress, a very low roughness.

One-step Physical Method for Synthesis of Cu Nanofluid in Ethylene Glycol

  • Bac, L.H.;Yun, K.S.;Kim, J.S.;Kim, J.C.;Rhee, C.K.
    • 한국분말재료학회지
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    • 제17권6호
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    • pp.464-469
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    • 2010
  • The Cu nanofluid in ethylene glycol was prepared by electrical explosion of wire, a novel one-step method. The X-ray diffraction, field emission scanning electron microscope and transmission electron microscope were used to study the properties of Cu nanoparticles. The results showed that the nanoparticles were consisted of pure face-centered cubic structure and near spherical shape with average grain size of 65 nm. Ultraviolet-visible spectroscopy (UV-Vis) confirmed Cu nanoparticles with a single absorbance peak of Cu surface plasmon resonance band at 600 nm. The nanofluid was found to be stable due to high positive zeta potential value, +51 mV. The backscattering level of nanofluid in static stationary was decreased about 2% for 5 days. The thermal conductivity measurement showed that Cu-ethylene glycol nanofluid with low concentration of nanoparticles had higher thermal conductivity than based fluid. The enhancement of thermal conductivity of nanofluid at a volume fraction of 0.1% was approximately 5.2%.

(Ba1-xCax)(Ti0.85Zr0.12Sn0.03)O3계 세라믹스의 미세구조 및 유전 특성 (Microstructure and Dielectric Properties of (Ba1-xCax)(Ti0.85Zr0.12Sn0.03)O3 Ceramics)

  • 신상훈;류주현;신동찬
    • 한국전기전자재료학회논문지
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    • 제27권12호
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    • pp.797-802
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    • 2014
  • In this study, in order to develop the capacitor composition ceramics with the good dielectric properties, $(Ba_{1-x}Ca_x)(Ti_{0.85}Zr_{0.12}Sn_{0.03})O_3$ (abbreviated as BCTZ) ceramics were prepared by the conventional solid-state reaction method. The effects of Ca substitution on the microstructure and dielectric properties was investigated. The X-ray diffraction patterns demonstrated that all the specimens showed perovskite phase, and secondary phases are indicated in the measurement range of X-ray diffraction. Also, all the specimens indicated an rhombohedron phase structure. It was identified from the X-ray diffraction patterns that the secondary phase formed in grain boundaries and then decreased the dielectric properties. For all the specimens, observed one peak was tetragonal cubic phase transition temperature($T_c$), which is located in the vicinity of room temperature.

직선형 5공 압력프로브를 이용한 3차원 유동속도 계측시스템 개발 (Measurement System Development for Three-Dimensional Flow Velocity Components Using Straight-Type Five-Hole Pressure Probe)

  • 김장권;정규조;오석형
    • 동력기계공학회지
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    • 제10권4호
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    • pp.56-64
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    • 2006
  • This paper shows the development process of a straight-type five-hole pressure probe for measuring three-dimensional flow velocity components. The data reduction method using a bi-cubic curve-fitting program in a new calibration map was introduced in this study. This new calibration map can be applied up to the application angle, ${\pm}55^{\circ}$ of a probe. As a result, for the application angle of ${\pm}45^{\circ}$, an error for yaw and pitch angles appeared from $-1.76^{\circ}\;to\;1.83^{\circ}$ and from $-1.91^{\circ}\;to\;1.75^{\circ}$, respectively. Moreover, an error for a vector magnitude and a static pressure compared with a dynamic one showed from -7.83% to 4.87% and from -0.73 to 0.77, respectively. Even though this data reduction method showed unsatisfactory errors in a vector magnitude, it resulted in an easy and simple application method. Especially, when it was applied to an actual flow field including a swirling flow, a good result came out on the whole. However, in order to obtain a better result, it is thought that a more sophisticated interpolation method needs to be introduced.

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Shape-dependent Adhesion and Friction on Au Nanoparticles Probed with Atomic Force Microscopy

  • Yuk, Youngji;Hong, Jong Wook;Han, Sang Woo;Park, Jeong Young
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.141-141
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    • 2013
  • Shape control of metal nanocrystals has broad applications, including catalysis, plasmonics, and sensing. It was found that controlling the atomic arrangement on metal nanocrystal surfaces affects many properties, including the electronic dipole or work function. Tuning the surface structure of exposed facets of metal nanocrystals was enabled by shape control. We investigated the effect of shape on nanomechanical properties, including friction and adhesion forces. Two nanoparticles systems, high-index {321} and low-index {100}, were used as model nanoparticle surfaces. Scanning force microscopy was used to probe nanoscale friction and adhesion. Because of the abundant presence of high-density atomic steps and kinks, high-index faceted nanoparticles have a higher surface energy than low-index faceted cubic nanoparticles. Due to this high surface energy, high-index faceted particles have shown stronger adhesion and higher friction than low-index nanoparticles. We discuss the results in light of the differences in surface energy as well as the effect of capping layers in the measurement.

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